JP6217261B2 - 原子セルの製造方法 - Google Patents
原子セルの製造方法 Download PDFInfo
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- JP6217261B2 JP6217261B2 JP2013186683A JP2013186683A JP6217261B2 JP 6217261 B2 JP6217261 B2 JP 6217261B2 JP 2013186683 A JP2013186683 A JP 2013186683A JP 2013186683 A JP2013186683 A JP 2013186683A JP 6217261 B2 JP6217261 B2 JP 6217261B2
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- 238000000034 method Methods 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000011248 coating agent Substances 0.000 claims description 144
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 238000007789 sealing Methods 0.000 claims description 23
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 22
- 239000003566 sealing material Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 13
- 238000009835 boiling Methods 0.000 claims description 7
- -1 siloxane compound Chemical class 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 136
- 150000001340 alkali metals Chemical group 0.000 description 84
- 229910052783 alkali metal Inorganic materials 0.000 description 75
- 238000000576 coating method Methods 0.000 description 56
- 230000005284 excitation Effects 0.000 description 41
- 239000000758 substrate Substances 0.000 description 35
- 125000004429 atom Chemical group 0.000 description 34
- 230000003287 optical effect Effects 0.000 description 19
- 238000001514 detection method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 230000006870 function Effects 0.000 description 15
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- 230000010355 oscillation Effects 0.000 description 12
- 230000005283 ground state Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
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| JP2013186683A JP6217261B2 (ja) | 2013-09-09 | 2013-09-09 | 原子セルの製造方法 |
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| JP2013186683A JP6217261B2 (ja) | 2013-09-09 | 2013-09-09 | 原子セルの製造方法 |
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| JP2017144753A Division JP6447678B2 (ja) | 2017-07-26 | 2017-07-26 | 原子セルの製造方法、原子セル、量子干渉装置、原子発振器および電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015053452A JP2015053452A (ja) | 2015-03-19 |
| JP2015053452A5 JP2015053452A5 (enExample) | 2016-10-27 |
| JP6217261B2 true JP6217261B2 (ja) | 2017-10-25 |
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| JP2013186683A Active JP6217261B2 (ja) | 2013-09-09 | 2013-09-09 | 原子セルの製造方法 |
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| JP (1) | JP6217261B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6488599B2 (ja) * | 2014-09-08 | 2019-03-27 | セイコーエプソン株式会社 | 量子干渉装置、原子セルの製造方法および電子機器 |
| JP2016205984A (ja) * | 2015-04-22 | 2016-12-08 | セイコーエプソン株式会社 | 磁気計測装置、磁気計測装置の製造方法、ガスセル、およびガスセルの製造方法 |
| JP6565307B2 (ja) * | 2015-05-01 | 2019-08-28 | セイコーエプソン株式会社 | 原子セル、量子干渉装置、原子発振器、および電子機器 |
| US10396809B2 (en) | 2016-02-19 | 2019-08-27 | Seiko Epson Corporation | Atomic cell, atomic cell manufacturing method, quantum interference device, atomic oscillator, electronic apparatus, and vehicle |
| JP2018004430A (ja) | 2016-07-01 | 2018-01-11 | セイコーエプソン株式会社 | ガスセルの製造方法、磁気計測装置の製造方法、およびガスセル |
| US11054453B2 (en) * | 2019-11-27 | 2021-07-06 | Quantum Valley Ideas Laboratories | Photonic-crystal vapor cells for imaging of electromagnetic fields |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002344314A (ja) * | 2001-05-21 | 2002-11-29 | Nec Miyagi Ltd | ルビジウム原子発振器 |
| EP2073515A1 (en) * | 2007-12-21 | 2009-06-24 | Koninklijke KPN N.V. | Identification of proximate mobile devices |
| JP2009212416A (ja) * | 2008-03-06 | 2009-09-17 | Epson Toyocom Corp | ガスセルの製造方法及びガスセル |
| JP5821439B2 (ja) * | 2011-02-16 | 2015-11-24 | セイコーエプソン株式会社 | ガスセルの製造方法 |
| JP5699725B2 (ja) * | 2011-03-23 | 2015-04-15 | セイコーエプソン株式会社 | ガスセル製造装置およびガスセルの製造方法 |
| JP5712066B2 (ja) * | 2011-06-27 | 2015-05-07 | 株式会社日立製作所 | 磁場計測装置、磁場計測装置製造方法 |
| JP5994408B2 (ja) * | 2011-08-29 | 2016-09-21 | セイコーエプソン株式会社 | パッケージの封止方法およびガスセルの製造方法 |
| JP5961998B2 (ja) * | 2011-12-15 | 2016-08-03 | 株式会社リコー | 原子発振器の製造方法 |
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| JP2015053452A (ja) | 2015-03-19 |
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