JP6215330B2 - 位置ずれ対象の不正確性を概算および補正するための方法 - Google Patents

位置ずれ対象の不正確性を概算および補正するための方法 Download PDF

Info

Publication number
JP6215330B2
JP6215330B2 JP2015531193A JP2015531193A JP6215330B2 JP 6215330 B2 JP6215330 B2 JP 6215330B2 JP 2015531193 A JP2015531193 A JP 2015531193A JP 2015531193 A JP2015531193 A JP 2015531193A JP 6215330 B2 JP6215330 B2 JP 6215330B2
Authority
JP
Japan
Prior art keywords
measurement
proportionality constant
quality
measuring
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015531193A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015534267A5 (enExample
JP2015534267A (ja
Inventor
エラン アミト
エラン アミト
ダナ クレイン
ダナ クレイン
ガイ コーエン
ガイ コーエン
アミル ウィドマン
アミル ウィドマン
ニムロド シュアル
ニムロド シュアル
アムノン マナッセン
アムノン マナッセン
ヌリエル アミル
ヌリエル アミル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2015534267A publication Critical patent/JP2015534267A/ja
Publication of JP2015534267A5 publication Critical patent/JP2015534267A5/ja
Application granted granted Critical
Publication of JP6215330B2 publication Critical patent/JP6215330B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/042Calibration or calibration artifacts
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015531193A 2012-09-05 2013-09-05 位置ずれ対象の不正確性を概算および補正するための方法 Active JP6215330B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201261696963P 2012-09-05 2012-09-05
US201261697159P 2012-09-05 2012-09-05
US61/696,963 2012-09-05
US61/697,159 2012-09-05
US201361764441P 2013-02-13 2013-02-13
US61/764,441 2013-02-13
US201361766320P 2013-02-19 2013-02-19
US61/766,320 2013-02-19
US13/834,915 2013-03-15
US13/834,915 US9329033B2 (en) 2012-09-05 2013-03-15 Method for estimating and correcting misregistration target inaccuracy
PCT/US2013/058254 WO2014039674A1 (en) 2012-09-05 2013-09-05 Method for estimating and correcting misregistration target inaccuracy

Publications (3)

Publication Number Publication Date
JP2015534267A JP2015534267A (ja) 2015-11-26
JP2015534267A5 JP2015534267A5 (enExample) 2016-10-20
JP6215330B2 true JP6215330B2 (ja) 2017-10-18

Family

ID=50185527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015531193A Active JP6215330B2 (ja) 2012-09-05 2013-09-05 位置ずれ対象の不正確性を概算および補正するための方法

Country Status (6)

Country Link
US (1) US9329033B2 (enExample)
JP (1) JP6215330B2 (enExample)
KR (1) KR102000746B1 (enExample)
CN (1) CN104736962B (enExample)
TW (1) TWI591342B (enExample)
WO (1) WO2014039674A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
WO2016037003A1 (en) 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
CN112698551B (zh) * 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
TWI755987B (zh) 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
CN108431692B (zh) 2015-12-23 2021-06-18 Asml荷兰有限公司 量测方法、量测设备和器件制造方法
US20180047646A1 (en) * 2016-02-24 2018-02-15 Kla-Tencor Corporation Accuracy improvements in optical metrology
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
US10191112B2 (en) * 2016-11-18 2019-01-29 Globalfoundries Inc. Early development of a database of fail signatures for systematic defects in integrated circuit (IC) chips
US10551320B2 (en) * 2017-01-30 2020-02-04 Kla-Tencor Corporation Activation of wafer particle defects for spectroscopic composition analysis
JP6960462B2 (ja) * 2017-02-28 2021-11-05 ケーエルエー コーポレイション オーバレイ計量データの確率論的挙動の影響の判別
EP3435162A1 (en) * 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6979529B2 (ja) * 2017-09-11 2021-12-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィプロセスにおける計測
EP3492985A1 (en) 2017-12-04 2019-06-05 ASML Netherlands B.V. Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets
US10533848B2 (en) 2018-03-05 2020-01-14 Kla-Tencor Corporation Metrology and control of overlay and edge placement errors
WO2019236084A1 (en) 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
US10964566B2 (en) * 2018-06-29 2021-03-30 Taiwan Semiconductor Manufacturing Go., Ltd. Machine learning on overlay virtual metrology
CN113544830A (zh) * 2019-03-08 2021-10-22 科磊股份有限公司 偏移测量的动态改善
US11551980B2 (en) * 2019-03-08 2023-01-10 Kla-Tencor Corporation Dynamic amelioration of misregistration measurement
US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN110796107A (zh) * 2019-11-04 2020-02-14 南京北旨智能科技有限公司 电力巡检图像缺陷识别方法和系统、电力巡检无人机
US11487929B2 (en) 2020-04-28 2022-11-01 Kla Corporation Target design process for overlay targets intended for multi-signal measurements
KR20230027089A (ko) 2020-06-25 2023-02-27 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
CN116157708A (zh) * 2020-07-20 2023-05-23 应用材料公司 光学装置和光学装置计量的方法
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12020970B2 (en) 2021-09-22 2024-06-25 International Business Machines Corporation Metrology data correction
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
TWI884023B (zh) * 2024-07-02 2025-05-11 創意電子股份有限公司 掃描捕捉限制的生成裝置及其生成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0298118A (ja) * 1988-10-05 1990-04-10 Oki Electric Ind Co Ltd ウエハアライメント方法
JP2000353647A (ja) * 1999-06-11 2000-12-19 Sumitomo Heavy Ind Ltd マスクとウエハの倍率補正量検出方法及び位置合わせ装置
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6737208B1 (en) * 2001-12-17 2004-05-18 Advanced Micro Devices, Inc. Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information
US7225047B2 (en) * 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US6948254B2 (en) * 2003-10-27 2005-09-27 Micronic Laser Systems Ab Method for calibration of a metrology stage
US6948149B2 (en) * 2004-02-19 2005-09-20 Infineon Technologies, Ag Method of determining the overlay accuracy of multiple patterns formed on a semiconductor wafer
US7065737B2 (en) * 2004-03-01 2006-06-20 Advanced Micro Devices, Inc Multi-layer overlay measurement and correction technique for IC manufacturing
JP4449697B2 (ja) * 2004-10-26 2010-04-14 株式会社ニコン 重ね合わせ検査システム
US7684011B2 (en) 2007-03-02 2010-03-23 Asml Netherlands B.V. Calibration method for a lithographic apparatus
CN100559283C (zh) * 2007-12-28 2009-11-11 上海微电子装备有限公司 测量方镜非正交性角度和缩放比例因子校正值的方法
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
US8484382B2 (en) * 2009-03-11 2013-07-09 Qualcomm Incorporated Methods and apparatus for merging peer-to-peer overlay networks
NL2005459A (en) * 2009-12-08 2011-06-09 Asml Netherlands Bv Inspection method and apparatus, and corresponding lithographic apparatus.
NL2005719A (en) * 2009-12-18 2011-06-21 Asml Netherlands Bv Method of measuring properties of dynamic positioning errors in a lithographic apparatus, data processing apparatus, and computer program product.
US9620426B2 (en) * 2010-02-18 2017-04-11 Kla-Tencor Corporation Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation
JP2011192769A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体デバイス製造方法、及び製造システム
NL2006322A (en) * 2010-03-18 2011-09-20 Asml Netherlands Bv Inspection apparatus and associated method and monitoring and control system.
KR101943593B1 (ko) 2011-04-06 2019-01-30 케이엘에이-텐코 코포레이션 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템

Also Published As

Publication number Publication date
US20140060148A1 (en) 2014-03-06
TWI591342B (zh) 2017-07-11
JP2015534267A (ja) 2015-11-26
TW201418711A (zh) 2014-05-16
CN104736962B (zh) 2017-10-03
KR20150052128A (ko) 2015-05-13
KR102000746B1 (ko) 2019-07-16
CN104736962A (zh) 2015-06-24
WO2014039674A1 (en) 2014-03-13
US9329033B2 (en) 2016-05-03

Similar Documents

Publication Publication Date Title
JP6215330B2 (ja) 位置ずれ対象の不正確性を概算および補正するための方法
CN107533995B (zh) 以模型为基础的热点监测
JP6924261B2 (ja) パターニングされたウェハの特性評価のためのハイブリッド計量
TWI755386B (zh) 計量系統及方法
TWI552245B (zh) 結合晶圓實體測量結果與數位模擬資料以改善半導體元件之製程的方法
TW202022860A (zh) 判定圖案化製程之校正之方法、元件製造方法、用於微影裝置之控制系統及微影裝置
CN104395997A (zh) 基于跨越晶片的参数变化的测量模型优化
US10365225B1 (en) Multi-location metrology
US9188974B1 (en) Methods for improved monitor and control of lithography processes
KR102283493B1 (ko) 피쳐의 위치를 결정하는 방법
TWI807442B (zh) 程序控制之晶粒內度量衡方法及系統
TWI685881B (zh) 判定出自複數個器件之一器件對一參數之一指紋之一貢獻的方法、系統、及程式
TWI778304B (zh) 用於監測微影裝置之方法
CN110392920A (zh) 基于超出规格点的减少的用于对准测量的取样图的确定
WO2024000635A1 (zh) 量测图形及其制备方法、量测方法
TWI744493B (zh) 控制系統
TW202441329A (zh) 基於光學檢測及機器學習之疊對估計
TW202441302A (zh) 傾斜度量衡之方法及相關設備
JP2008182114A (ja) 露光余裕度の算出方法、露光評価装置及び露光評価用プログラム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160902

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160902

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170829

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170920

R150 Certificate of patent or registration of utility model

Ref document number: 6215330

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250