JP6215330B2 - 位置ずれ対象の不正確性を概算および補正するための方法 - Google Patents
位置ずれ対象の不正確性を概算および補正するための方法 Download PDFInfo
- Publication number
- JP6215330B2 JP6215330B2 JP2015531193A JP2015531193A JP6215330B2 JP 6215330 B2 JP6215330 B2 JP 6215330B2 JP 2015531193 A JP2015531193 A JP 2015531193A JP 2015531193 A JP2015531193 A JP 2015531193A JP 6215330 B2 JP6215330 B2 JP 6215330B2
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- Prior art keywords
- measurement
- proportionality constant
- quality
- measuring
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/042—Calibration or calibration artifacts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Engineering & Computer Science (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261696963P | 2012-09-05 | 2012-09-05 | |
| US201261697159P | 2012-09-05 | 2012-09-05 | |
| US61/696,963 | 2012-09-05 | ||
| US61/697,159 | 2012-09-05 | ||
| US201361764441P | 2013-02-13 | 2013-02-13 | |
| US61/764,441 | 2013-02-13 | ||
| US201361766320P | 2013-02-19 | 2013-02-19 | |
| US61/766,320 | 2013-02-19 | ||
| US13/834,915 | 2013-03-15 | ||
| US13/834,915 US9329033B2 (en) | 2012-09-05 | 2013-03-15 | Method for estimating and correcting misregistration target inaccuracy |
| PCT/US2013/058254 WO2014039674A1 (en) | 2012-09-05 | 2013-09-05 | Method for estimating and correcting misregistration target inaccuracy |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015534267A JP2015534267A (ja) | 2015-11-26 |
| JP2015534267A5 JP2015534267A5 (enExample) | 2016-10-20 |
| JP6215330B2 true JP6215330B2 (ja) | 2017-10-18 |
Family
ID=50185527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015531193A Active JP6215330B2 (ja) | 2012-09-05 | 2013-09-05 | 位置ずれ対象の不正確性を概算および補正するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9329033B2 (enExample) |
| JP (1) | JP6215330B2 (enExample) |
| KR (1) | KR102000746B1 (enExample) |
| CN (1) | CN104736962B (enExample) |
| TW (1) | TWI591342B (enExample) |
| WO (1) | WO2014039674A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
| WO2015031337A1 (en) * | 2013-08-27 | 2015-03-05 | Kla-Tencor Corporation | Removing process-variation-related inaccuracies from scatterometry measurements |
| WO2016037003A1 (en) | 2014-09-03 | 2016-03-10 | Kla-Tencor Corporation | Optimizing the utilization of metrology tools |
| CN112698551B (zh) * | 2014-11-25 | 2024-04-23 | 科磊股份有限公司 | 分析及利用景观 |
| TWI755987B (zh) | 2015-05-19 | 2022-02-21 | 美商克萊譚克公司 | 具有用於疊對測量之形貌相位控制之光學系統 |
| CN108431692B (zh) | 2015-12-23 | 2021-06-18 | Asml荷兰有限公司 | 量测方法、量测设备和器件制造方法 |
| US20180047646A1 (en) * | 2016-02-24 | 2018-02-15 | Kla-Tencor Corporation | Accuracy improvements in optical metrology |
| US10372114B2 (en) * | 2016-10-21 | 2019-08-06 | Kla-Tencor Corporation | Quantifying and reducing total measurement uncertainty |
| US10527952B2 (en) * | 2016-10-25 | 2020-01-07 | Kla-Tencor Corporation | Fault discrimination and calibration of scatterometry overlay targets |
| US10191112B2 (en) * | 2016-11-18 | 2019-01-29 | Globalfoundries Inc. | Early development of a database of fail signatures for systematic defects in integrated circuit (IC) chips |
| US10551320B2 (en) * | 2017-01-30 | 2020-02-04 | Kla-Tencor Corporation | Activation of wafer particle defects for spectroscopic composition analysis |
| JP6960462B2 (ja) * | 2017-02-28 | 2021-11-05 | ケーエルエー コーポレイション | オーバレイ計量データの確率論的挙動の影響の判別 |
| EP3435162A1 (en) * | 2017-07-28 | 2019-01-30 | ASML Netherlands B.V. | Metrology method and apparatus and computer program |
| US10401738B2 (en) * | 2017-08-02 | 2019-09-03 | Kla-Tencor Corporation | Overlay metrology using multiple parameter configurations |
| JP6979529B2 (ja) * | 2017-09-11 | 2021-12-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィプロセスにおける計測 |
| EP3492985A1 (en) | 2017-12-04 | 2019-06-05 | ASML Netherlands B.V. | Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets |
| US10533848B2 (en) | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| WO2019236084A1 (en) | 2018-06-07 | 2019-12-12 | Kla-Tencor Corporation | Overlay measurement using phase and amplitude modeling |
| US10964566B2 (en) * | 2018-06-29 | 2021-03-30 | Taiwan Semiconductor Manufacturing Go., Ltd. | Machine learning on overlay virtual metrology |
| CN113544830A (zh) * | 2019-03-08 | 2021-10-22 | 科磊股份有限公司 | 偏移测量的动态改善 |
| US11551980B2 (en) * | 2019-03-08 | 2023-01-10 | Kla-Tencor Corporation | Dynamic amelioration of misregistration measurement |
| US20220244649A1 (en) * | 2019-07-04 | 2022-08-04 | Asml Netherlands B.V. | Sub-field control of a lithographic process and associated apparatus |
| CN110796107A (zh) * | 2019-11-04 | 2020-02-14 | 南京北旨智能科技有限公司 | 电力巡检图像缺陷识别方法和系统、电力巡检无人机 |
| US11487929B2 (en) | 2020-04-28 | 2022-11-01 | Kla Corporation | Target design process for overlay targets intended for multi-signal measurements |
| KR20230027089A (ko) | 2020-06-25 | 2023-02-27 | 케이엘에이 코포레이션 | 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법 |
| US12100574B2 (en) | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| CN116157708A (zh) * | 2020-07-20 | 2023-05-23 | 应用材料公司 | 光学装置和光学装置计量的方法 |
| US11454894B2 (en) * | 2020-09-14 | 2022-09-27 | Kla Corporation | Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof |
| US12020970B2 (en) | 2021-09-22 | 2024-06-25 | International Business Machines Corporation | Metrology data correction |
| KR102519813B1 (ko) | 2022-10-17 | 2023-04-11 | (주)오로스테크놀로지 | 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램 |
| TWI884023B (zh) * | 2024-07-02 | 2025-05-11 | 創意電子股份有限公司 | 掃描捕捉限制的生成裝置及其生成方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0298118A (ja) * | 1988-10-05 | 1990-04-10 | Oki Electric Ind Co Ltd | ウエハアライメント方法 |
| JP2000353647A (ja) * | 1999-06-11 | 2000-12-19 | Sumitomo Heavy Ind Ltd | マスクとウエハの倍率補正量検出方法及び位置合わせ装置 |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US6737208B1 (en) * | 2001-12-17 | 2004-05-18 | Advanced Micro Devices, Inc. | Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information |
| US7225047B2 (en) * | 2002-03-19 | 2007-05-29 | Applied Materials, Inc. | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements |
| US6948254B2 (en) * | 2003-10-27 | 2005-09-27 | Micronic Laser Systems Ab | Method for calibration of a metrology stage |
| US6948149B2 (en) * | 2004-02-19 | 2005-09-20 | Infineon Technologies, Ag | Method of determining the overlay accuracy of multiple patterns formed on a semiconductor wafer |
| US7065737B2 (en) * | 2004-03-01 | 2006-06-20 | Advanced Micro Devices, Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
| JP4449697B2 (ja) * | 2004-10-26 | 2010-04-14 | 株式会社ニコン | 重ね合わせ検査システム |
| US7684011B2 (en) | 2007-03-02 | 2010-03-23 | Asml Netherlands B.V. | Calibration method for a lithographic apparatus |
| CN100559283C (zh) * | 2007-12-28 | 2009-11-11 | 上海微电子装备有限公司 | 测量方镜非正交性角度和缩放比例因子校正值的方法 |
| US8214771B2 (en) * | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
| US8484382B2 (en) * | 2009-03-11 | 2013-07-09 | Qualcomm Incorporated | Methods and apparatus for merging peer-to-peer overlay networks |
| NL2005459A (en) * | 2009-12-08 | 2011-06-09 | Asml Netherlands Bv | Inspection method and apparatus, and corresponding lithographic apparatus. |
| NL2005719A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | Method of measuring properties of dynamic positioning errors in a lithographic apparatus, data processing apparatus, and computer program product. |
| US9620426B2 (en) * | 2010-02-18 | 2017-04-11 | Kla-Tencor Corporation | Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation |
| JP2011192769A (ja) * | 2010-03-15 | 2011-09-29 | Renesas Electronics Corp | 半導体デバイス製造方法、及び製造システム |
| NL2006322A (en) * | 2010-03-18 | 2011-09-20 | Asml Netherlands Bv | Inspection apparatus and associated method and monitoring and control system. |
| KR101943593B1 (ko) | 2011-04-06 | 2019-01-30 | 케이엘에이-텐코 코포레이션 | 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템 |
-
2013
- 2013-03-15 US US13/834,915 patent/US9329033B2/en active Active
- 2013-09-05 WO PCT/US2013/058254 patent/WO2014039674A1/en not_active Ceased
- 2013-09-05 CN CN201380054535.0A patent/CN104736962B/zh active Active
- 2013-09-05 KR KR1020157007740A patent/KR102000746B1/ko active Active
- 2013-09-05 JP JP2015531193A patent/JP6215330B2/ja active Active
- 2013-09-05 TW TW102132061A patent/TWI591342B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20140060148A1 (en) | 2014-03-06 |
| TWI591342B (zh) | 2017-07-11 |
| JP2015534267A (ja) | 2015-11-26 |
| TW201418711A (zh) | 2014-05-16 |
| CN104736962B (zh) | 2017-10-03 |
| KR20150052128A (ko) | 2015-05-13 |
| KR102000746B1 (ko) | 2019-07-16 |
| CN104736962A (zh) | 2015-06-24 |
| WO2014039674A1 (en) | 2014-03-13 |
| US9329033B2 (en) | 2016-05-03 |
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