KR102000746B1 - 편심 타겟 부정확도를 추정 및 정정하기 위한 방법 - Google Patents

편심 타겟 부정확도를 추정 및 정정하기 위한 방법 Download PDF

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KR102000746B1
KR102000746B1 KR1020157007740A KR20157007740A KR102000746B1 KR 102000746 B1 KR102000746 B1 KR 102000746B1 KR 1020157007740 A KR1020157007740 A KR 1020157007740A KR 20157007740 A KR20157007740 A KR 20157007740A KR 102000746 B1 KR102000746 B1 KR 102000746B1
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South Korea
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metrology
measurement
tool
target
measured
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KR20150052128A (ko
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에란 아미트
다나 클레인
구이 코헨
아미르 위드만
님로드 슈알
암논 마나쎈
누리엘 아미르
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케이엘에이-텐코 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/042—Calibration or calibration artifacts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020157007740A 2012-09-05 2013-09-05 편심 타겟 부정확도를 추정 및 정정하기 위한 방법 Active KR102000746B1 (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201261696963P 2012-09-05 2012-09-05
US201261697159P 2012-09-05 2012-09-05
US61/696,963 2012-09-05
US61/697,159 2012-09-05
US201361764441P 2013-02-13 2013-02-13
US61/764,441 2013-02-13
US201361766320P 2013-02-19 2013-02-19
US61/766,320 2013-02-19
US13/834,915 2013-03-15
US13/834,915 US9329033B2 (en) 2012-09-05 2013-03-15 Method for estimating and correcting misregistration target inaccuracy
PCT/US2013/058254 WO2014039674A1 (en) 2012-09-05 2013-09-05 Method for estimating and correcting misregistration target inaccuracy

Publications (2)

Publication Number Publication Date
KR20150052128A KR20150052128A (ko) 2015-05-13
KR102000746B1 true KR102000746B1 (ko) 2019-07-16

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KR1020157007740A Active KR102000746B1 (ko) 2012-09-05 2013-09-05 편심 타겟 부정확도를 추정 및 정정하기 위한 방법

Country Status (6)

Country Link
US (1) US9329033B2 (enExample)
JP (1) JP6215330B2 (enExample)
KR (1) KR102000746B1 (enExample)
CN (1) CN104736962B (enExample)
TW (1) TWI591342B (enExample)
WO (1) WO2014039674A1 (enExample)

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CN108431692B (zh) 2015-12-23 2021-06-18 Asml荷兰有限公司 量测方法、量测设备和器件制造方法
US20180047646A1 (en) * 2016-02-24 2018-02-15 Kla-Tencor Corporation Accuracy improvements in optical metrology
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
US10191112B2 (en) * 2016-11-18 2019-01-29 Globalfoundries Inc. Early development of a database of fail signatures for systematic defects in integrated circuit (IC) chips
US10551320B2 (en) * 2017-01-30 2020-02-04 Kla-Tencor Corporation Activation of wafer particle defects for spectroscopic composition analysis
JP6960462B2 (ja) * 2017-02-28 2021-11-05 ケーエルエー コーポレイション オーバレイ計量データの確率論的挙動の影響の判別
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US10964566B2 (en) * 2018-06-29 2021-03-30 Taiwan Semiconductor Manufacturing Go., Ltd. Machine learning on overlay virtual metrology
CN113544830A (zh) * 2019-03-08 2021-10-22 科磊股份有限公司 偏移测量的动态改善
US11551980B2 (en) * 2019-03-08 2023-01-10 Kla-Tencor Corporation Dynamic amelioration of misregistration measurement
US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN110796107A (zh) * 2019-11-04 2020-02-14 南京北旨智能科技有限公司 电力巡检图像缺陷识别方法和系统、电力巡检无人机
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KR20230027089A (ko) 2020-06-25 2023-02-27 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
CN116157708A (zh) * 2020-07-20 2023-05-23 应用材料公司 光学装置和光学装置计量的方法
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12020970B2 (en) 2021-09-22 2024-06-25 International Business Machines Corporation Metrology data correction
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
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Also Published As

Publication number Publication date
US20140060148A1 (en) 2014-03-06
TWI591342B (zh) 2017-07-11
JP2015534267A (ja) 2015-11-26
TW201418711A (zh) 2014-05-16
CN104736962B (zh) 2017-10-03
KR20150052128A (ko) 2015-05-13
CN104736962A (zh) 2015-06-24
WO2014039674A1 (en) 2014-03-13
JP6215330B2 (ja) 2017-10-18
US9329033B2 (en) 2016-05-03

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