CN104736962B - 用于估计及校正偏移目标不准确度的方法 - Google Patents

用于估计及校正偏移目标不准确度的方法 Download PDF

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Publication number
CN104736962B
CN104736962B CN201380054535.0A CN201380054535A CN104736962B CN 104736962 B CN104736962 B CN 104736962B CN 201380054535 A CN201380054535 A CN 201380054535A CN 104736962 B CN104736962 B CN 104736962B
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CN
China
Prior art keywords
measurement
merit
metering outfit
target
metering
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CN201380054535.0A
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English (en)
Chinese (zh)
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CN104736962A (zh
Inventor
依兰·阿米特
达纳·克莱因
盖伊·科恩
阿米尔·威德曼
尼姆洛德·雪渥尔
阿姆农·玛纳森
努里尔·阿米尔
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KLA Corp
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KLA Tencor Corp
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/042—Calibration or calibration artifacts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201380054535.0A 2012-09-05 2013-09-05 用于估计及校正偏移目标不准确度的方法 Active CN104736962B (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201261696963P 2012-09-05 2012-09-05
US201261697159P 2012-09-05 2012-09-05
US61/696,963 2012-09-05
US61/697,159 2012-09-05
US201361764441P 2013-02-13 2013-02-13
US61/764,441 2013-02-13
US201361766320P 2013-02-19 2013-02-19
US61/766,320 2013-02-19
US13/834,915 2013-03-15
US13/834,915 US9329033B2 (en) 2012-09-05 2013-03-15 Method for estimating and correcting misregistration target inaccuracy
PCT/US2013/058254 WO2014039674A1 (en) 2012-09-05 2013-09-05 Method for estimating and correcting misregistration target inaccuracy

Publications (2)

Publication Number Publication Date
CN104736962A CN104736962A (zh) 2015-06-24
CN104736962B true CN104736962B (zh) 2017-10-03

Family

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Application Number Title Priority Date Filing Date
CN201380054535.0A Active CN104736962B (zh) 2012-09-05 2013-09-05 用于估计及校正偏移目标不准确度的方法

Country Status (6)

Country Link
US (1) US9329033B2 (enExample)
JP (1) JP6215330B2 (enExample)
KR (1) KR102000746B1 (enExample)
CN (1) CN104736962B (enExample)
TW (1) TWI591342B (enExample)
WO (1) WO2014039674A1 (enExample)

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CN112698551B (zh) * 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
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CN108431692B (zh) 2015-12-23 2021-06-18 Asml荷兰有限公司 量测方法、量测设备和器件制造方法
US20180047646A1 (en) * 2016-02-24 2018-02-15 Kla-Tencor Corporation Accuracy improvements in optical metrology
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
US10191112B2 (en) * 2016-11-18 2019-01-29 Globalfoundries Inc. Early development of a database of fail signatures for systematic defects in integrated circuit (IC) chips
US10551320B2 (en) * 2017-01-30 2020-02-04 Kla-Tencor Corporation Activation of wafer particle defects for spectroscopic composition analysis
JP6960462B2 (ja) * 2017-02-28 2021-11-05 ケーエルエー コーポレイション オーバレイ計量データの確率論的挙動の影響の判別
EP3435162A1 (en) * 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6979529B2 (ja) * 2017-09-11 2021-12-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィプロセスにおける計測
EP3492985A1 (en) 2017-12-04 2019-06-05 ASML Netherlands B.V. Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets
US10533848B2 (en) 2018-03-05 2020-01-14 Kla-Tencor Corporation Metrology and control of overlay and edge placement errors
WO2019236084A1 (en) 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
US10964566B2 (en) * 2018-06-29 2021-03-30 Taiwan Semiconductor Manufacturing Go., Ltd. Machine learning on overlay virtual metrology
CN113544830A (zh) * 2019-03-08 2021-10-22 科磊股份有限公司 偏移测量的动态改善
US11551980B2 (en) * 2019-03-08 2023-01-10 Kla-Tencor Corporation Dynamic amelioration of misregistration measurement
US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN110796107A (zh) * 2019-11-04 2020-02-14 南京北旨智能科技有限公司 电力巡检图像缺陷识别方法和系统、电力巡检无人机
US11487929B2 (en) 2020-04-28 2022-11-01 Kla Corporation Target design process for overlay targets intended for multi-signal measurements
KR20230027089A (ko) 2020-06-25 2023-02-27 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
CN116157708A (zh) * 2020-07-20 2023-05-23 应用材料公司 光学装置和光学装置计量的方法
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12020970B2 (en) 2021-09-22 2024-06-25 International Business Machines Corporation Metrology data correction
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
TWI884023B (zh) * 2024-07-02 2025-05-11 創意電子股份有限公司 掃描捕捉限制的生成裝置及其生成方法

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JPH0298118A (ja) * 1988-10-05 1990-04-10 Oki Electric Ind Co Ltd ウエハアライメント方法
JP2000353647A (ja) * 1999-06-11 2000-12-19 Sumitomo Heavy Ind Ltd マスクとウエハの倍率補正量検出方法及び位置合わせ装置
CN1643452A (zh) * 2001-12-17 2005-07-20 先进微装置公司 使用前馈覆盖信息的光刻覆盖控制
CN1875245A (zh) * 2003-10-27 2006-12-06 麦克罗尼克激光系统公司 用于测量平台的校准的方法
CN101216680A (zh) * 2007-12-28 2008-07-09 上海微电子装备有限公司 测量方镜非正交性角度和缩放比例因子校正值的方法
CN102103330A (zh) * 2009-12-18 2011-06-22 Asml荷兰有限公司 测量光刻设备中动态定位误差的性质的方法、数据处理设备以及计算机程序产品

Also Published As

Publication number Publication date
US20140060148A1 (en) 2014-03-06
TWI591342B (zh) 2017-07-11
JP2015534267A (ja) 2015-11-26
TW201418711A (zh) 2014-05-16
KR20150052128A (ko) 2015-05-13
KR102000746B1 (ko) 2019-07-16
CN104736962A (zh) 2015-06-24
WO2014039674A1 (en) 2014-03-13
JP6215330B2 (ja) 2017-10-18
US9329033B2 (en) 2016-05-03

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