TWI591342B - 計量工具、用於校準計量工具之方法、用於使比例因數與目標缺陷相關聯之方法、用於偵測目標缺陷類型之方法及相關非暫時性電腦可讀媒體 - Google Patents
計量工具、用於校準計量工具之方法、用於使比例因數與目標缺陷相關聯之方法、用於偵測目標缺陷類型之方法及相關非暫時性電腦可讀媒體 Download PDFInfo
- Publication number
- TWI591342B TWI591342B TW102132061A TW102132061A TWI591342B TW I591342 B TWI591342 B TW I591342B TW 102132061 A TW102132061 A TW 102132061A TW 102132061 A TW102132061 A TW 102132061A TW I591342 B TWI591342 B TW I591342B
- Authority
- TW
- Taiwan
- Prior art keywords
- measurement
- metrology
- metrology tool
- target
- tool
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 77
- 230000007547 defect Effects 0.000 title claims description 61
- 238000005259 measurement Methods 0.000 claims description 282
- 239000000758 substrate Substances 0.000 claims description 58
- 238000005457 optimization Methods 0.000 claims description 56
- 239000000203 mixture Substances 0.000 claims description 5
- 238000009472 formulation Methods 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 238000000572 ellipsometry Methods 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 49
- 239000010410 layer Substances 0.000 description 34
- 238000012545 processing Methods 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002813 epsilometer test Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000013442 quality metrics Methods 0.000 description 1
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- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/042—Calibration or calibration artifacts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Engineering & Computer Science (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261696963P | 2012-09-05 | 2012-09-05 | |
| US201261697159P | 2012-09-05 | 2012-09-05 | |
| US201361764441P | 2013-02-13 | 2013-02-13 | |
| US201361766320P | 2013-02-19 | 2013-02-19 | |
| US13/834,915 US9329033B2 (en) | 2012-09-05 | 2013-03-15 | Method for estimating and correcting misregistration target inaccuracy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201418711A TW201418711A (zh) | 2014-05-16 |
| TWI591342B true TWI591342B (zh) | 2017-07-11 |
Family
ID=50185527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102132061A TWI591342B (zh) | 2012-09-05 | 2013-09-05 | 計量工具、用於校準計量工具之方法、用於使比例因數與目標缺陷相關聯之方法、用於偵測目標缺陷類型之方法及相關非暫時性電腦可讀媒體 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9329033B2 (enExample) |
| JP (1) | JP6215330B2 (enExample) |
| KR (1) | KR102000746B1 (enExample) |
| CN (1) | CN104736962B (enExample) |
| TW (1) | TWI591342B (enExample) |
| WO (1) | WO2014039674A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12237188B2 (en) * | 2018-06-29 | 2025-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Machine learning on overlay management |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
| WO2015031337A1 (en) * | 2013-08-27 | 2015-03-05 | Kla-Tencor Corporation | Removing process-variation-related inaccuracies from scatterometry measurements |
| WO2016037003A1 (en) | 2014-09-03 | 2016-03-10 | Kla-Tencor Corporation | Optimizing the utilization of metrology tools |
| CN112698551B (zh) * | 2014-11-25 | 2024-04-23 | 科磊股份有限公司 | 分析及利用景观 |
| TWI755987B (zh) | 2015-05-19 | 2022-02-21 | 美商克萊譚克公司 | 具有用於疊對測量之形貌相位控制之光學系統 |
| CN108431692B (zh) | 2015-12-23 | 2021-06-18 | Asml荷兰有限公司 | 量测方法、量测设备和器件制造方法 |
| US20180047646A1 (en) * | 2016-02-24 | 2018-02-15 | Kla-Tencor Corporation | Accuracy improvements in optical metrology |
| US10372114B2 (en) * | 2016-10-21 | 2019-08-06 | Kla-Tencor Corporation | Quantifying and reducing total measurement uncertainty |
| US10527952B2 (en) * | 2016-10-25 | 2020-01-07 | Kla-Tencor Corporation | Fault discrimination and calibration of scatterometry overlay targets |
| US10191112B2 (en) * | 2016-11-18 | 2019-01-29 | Globalfoundries Inc. | Early development of a database of fail signatures for systematic defects in integrated circuit (IC) chips |
| US10551320B2 (en) * | 2017-01-30 | 2020-02-04 | Kla-Tencor Corporation | Activation of wafer particle defects for spectroscopic composition analysis |
| JP6960462B2 (ja) * | 2017-02-28 | 2021-11-05 | ケーエルエー コーポレイション | オーバレイ計量データの確率論的挙動の影響の判別 |
| EP3435162A1 (en) * | 2017-07-28 | 2019-01-30 | ASML Netherlands B.V. | Metrology method and apparatus and computer program |
| US10401738B2 (en) * | 2017-08-02 | 2019-09-03 | Kla-Tencor Corporation | Overlay metrology using multiple parameter configurations |
| JP6979529B2 (ja) * | 2017-09-11 | 2021-12-15 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィプロセスにおける計測 |
| EP3492985A1 (en) | 2017-12-04 | 2019-06-05 | ASML Netherlands B.V. | Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets |
| US10533848B2 (en) | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| WO2019236084A1 (en) | 2018-06-07 | 2019-12-12 | Kla-Tencor Corporation | Overlay measurement using phase and amplitude modeling |
| CN113544830A (zh) * | 2019-03-08 | 2021-10-22 | 科磊股份有限公司 | 偏移测量的动态改善 |
| US11551980B2 (en) * | 2019-03-08 | 2023-01-10 | Kla-Tencor Corporation | Dynamic amelioration of misregistration measurement |
| US20220244649A1 (en) * | 2019-07-04 | 2022-08-04 | Asml Netherlands B.V. | Sub-field control of a lithographic process and associated apparatus |
| CN110796107A (zh) * | 2019-11-04 | 2020-02-14 | 南京北旨智能科技有限公司 | 电力巡检图像缺陷识别方法和系统、电力巡检无人机 |
| US11487929B2 (en) | 2020-04-28 | 2022-11-01 | Kla Corporation | Target design process for overlay targets intended for multi-signal measurements |
| KR20230027089A (ko) | 2020-06-25 | 2023-02-27 | 케이엘에이 코포레이션 | 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법 |
| US12100574B2 (en) | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| CN116157708A (zh) * | 2020-07-20 | 2023-05-23 | 应用材料公司 | 光学装置和光学装置计量的方法 |
| US11454894B2 (en) * | 2020-09-14 | 2022-09-27 | Kla Corporation | Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof |
| US12020970B2 (en) | 2021-09-22 | 2024-06-25 | International Business Machines Corporation | Metrology data correction |
| KR102519813B1 (ko) | 2022-10-17 | 2023-04-11 | (주)오로스테크놀로지 | 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램 |
| TWI884023B (zh) * | 2024-07-02 | 2025-05-11 | 創意電子股份有限公司 | 掃描捕捉限制的生成裝置及其生成方法 |
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| JPH0298118A (ja) * | 1988-10-05 | 1990-04-10 | Oki Electric Ind Co Ltd | ウエハアライメント方法 |
| JP2000353647A (ja) * | 1999-06-11 | 2000-12-19 | Sumitomo Heavy Ind Ltd | マスクとウエハの倍率補正量検出方法及び位置合わせ装置 |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US6737208B1 (en) * | 2001-12-17 | 2004-05-18 | Advanced Micro Devices, Inc. | Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information |
| US7225047B2 (en) * | 2002-03-19 | 2007-05-29 | Applied Materials, Inc. | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements |
| US6948254B2 (en) * | 2003-10-27 | 2005-09-27 | Micronic Laser Systems Ab | Method for calibration of a metrology stage |
| US6948149B2 (en) * | 2004-02-19 | 2005-09-20 | Infineon Technologies, Ag | Method of determining the overlay accuracy of multiple patterns formed on a semiconductor wafer |
| US7065737B2 (en) * | 2004-03-01 | 2006-06-20 | Advanced Micro Devices, Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
| JP4449697B2 (ja) * | 2004-10-26 | 2010-04-14 | 株式会社ニコン | 重ね合わせ検査システム |
| US7684011B2 (en) | 2007-03-02 | 2010-03-23 | Asml Netherlands B.V. | Calibration method for a lithographic apparatus |
| CN100559283C (zh) * | 2007-12-28 | 2009-11-11 | 上海微电子装备有限公司 | 测量方镜非正交性角度和缩放比例因子校正值的方法 |
| US8214771B2 (en) * | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
| US8484382B2 (en) * | 2009-03-11 | 2013-07-09 | Qualcomm Incorporated | Methods and apparatus for merging peer-to-peer overlay networks |
| NL2005459A (en) * | 2009-12-08 | 2011-06-09 | Asml Netherlands Bv | Inspection method and apparatus, and corresponding lithographic apparatus. |
| NL2005719A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | Method of measuring properties of dynamic positioning errors in a lithographic apparatus, data processing apparatus, and computer program product. |
| US9620426B2 (en) * | 2010-02-18 | 2017-04-11 | Kla-Tencor Corporation | Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation |
| JP2011192769A (ja) * | 2010-03-15 | 2011-09-29 | Renesas Electronics Corp | 半導体デバイス製造方法、及び製造システム |
| NL2006322A (en) * | 2010-03-18 | 2011-09-20 | Asml Netherlands Bv | Inspection apparatus and associated method and monitoring and control system. |
| KR101943593B1 (ko) | 2011-04-06 | 2019-01-30 | 케이엘에이-텐코 코포레이션 | 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템 |
-
2013
- 2013-03-15 US US13/834,915 patent/US9329033B2/en active Active
- 2013-09-05 WO PCT/US2013/058254 patent/WO2014039674A1/en not_active Ceased
- 2013-09-05 CN CN201380054535.0A patent/CN104736962B/zh active Active
- 2013-09-05 KR KR1020157007740A patent/KR102000746B1/ko active Active
- 2013-09-05 JP JP2015531193A patent/JP6215330B2/ja active Active
- 2013-09-05 TW TW102132061A patent/TWI591342B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12237188B2 (en) * | 2018-06-29 | 2025-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Machine learning on overlay management |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140060148A1 (en) | 2014-03-06 |
| JP2015534267A (ja) | 2015-11-26 |
| TW201418711A (zh) | 2014-05-16 |
| CN104736962B (zh) | 2017-10-03 |
| KR20150052128A (ko) | 2015-05-13 |
| KR102000746B1 (ko) | 2019-07-16 |
| CN104736962A (zh) | 2015-06-24 |
| WO2014039674A1 (en) | 2014-03-13 |
| JP6215330B2 (ja) | 2017-10-18 |
| US9329033B2 (en) | 2016-05-03 |
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