JP6213165B2 - 検出装置、センサー、電子機器及び移動体 - Google Patents

検出装置、センサー、電子機器及び移動体 Download PDF

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Publication number
JP6213165B2
JP6213165B2 JP2013231342A JP2013231342A JP6213165B2 JP 6213165 B2 JP6213165 B2 JP 6213165B2 JP 2013231342 A JP2013231342 A JP 2013231342A JP 2013231342 A JP2013231342 A JP 2013231342A JP 6213165 B2 JP6213165 B2 JP 6213165B2
Authority
JP
Japan
Prior art keywords
circuit
signal
voltage
current
vibrator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013231342A
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English (en)
Japanese (ja)
Other versions
JP2015090352A (ja
JP2015090352A5 (enExample
Inventor
牧 克彦
克彦 牧
金井 正博
正博 金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2013231342A priority Critical patent/JP6213165B2/ja
Priority to US14/534,527 priority patent/US9813037B2/en
Priority to CN201410638604.9A priority patent/CN104634336B/zh
Publication of JP2015090352A publication Critical patent/JP2015090352A/ja
Publication of JP2015090352A5 publication Critical patent/JP2015090352A5/ja
Application granted granted Critical
Publication of JP6213165B2 publication Critical patent/JP6213165B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3005Automatic control in amplifiers having semiconductor devices in amplifiers suitable for low-frequencies, e.g. audio amplifiers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • G01C19/5614Signal processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5649Signal processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5776Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/261Amplifier which being suitable for instrumentation applications
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45212Indexing scheme relating to differential amplifiers the differential amplifier being designed to have a reduced offset
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45476Indexing scheme relating to differential amplifiers the CSC comprising a mirror circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45508Indexing scheme relating to differential amplifiers the CSC comprising a voltage generating circuit as bias circuit for the CSC
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45512Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45528Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45534Indexing scheme relating to differential amplifiers the FBC comprising multiple switches and being coupled between the LC and the IC
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45536Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45674Indexing scheme relating to differential amplifiers the LC comprising one current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Gyroscopes (AREA)
JP2013231342A 2013-11-07 2013-11-07 検出装置、センサー、電子機器及び移動体 Expired - Fee Related JP6213165B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013231342A JP6213165B2 (ja) 2013-11-07 2013-11-07 検出装置、センサー、電子機器及び移動体
US14/534,527 US9813037B2 (en) 2013-11-07 2014-11-06 Detection device, sensor, electronic apparatus, and moving object
CN201410638604.9A CN104634336B (zh) 2013-11-07 2014-11-06 检测装置、传感器、电子设备以及移动体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013231342A JP6213165B2 (ja) 2013-11-07 2013-11-07 検出装置、センサー、電子機器及び移動体

Publications (3)

Publication Number Publication Date
JP2015090352A JP2015090352A (ja) 2015-05-11
JP2015090352A5 JP2015090352A5 (enExample) 2016-12-22
JP6213165B2 true JP6213165B2 (ja) 2017-10-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013231342A Expired - Fee Related JP6213165B2 (ja) 2013-11-07 2013-11-07 検出装置、センサー、電子機器及び移動体

Country Status (3)

Country Link
US (1) US9813037B2 (enExample)
JP (1) JP6213165B2 (enExample)
CN (1) CN104634336B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303411B2 (ja) * 2013-11-07 2018-04-04 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体
JP6213165B2 (ja) 2013-11-07 2017-10-18 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体
KR101869924B1 (ko) * 2017-01-31 2018-06-21 다믈멀티미디어주식회사 자이로센서 모듈

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JPH05259738A (ja) 1992-03-13 1993-10-08 Hitachi Ltd 発振回路
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JPH08307199A (ja) 1995-01-11 1996-11-22 Yoshiro Tomikawa 静電型変換手段の容量成分低減回路および静電型変換手段の駆動装置ならびに検出装置
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US6510737B1 (en) * 2000-09-15 2003-01-28 Bei Technologies, Inc. Inertial rate sensor and method with improved tuning fork drive
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JP6194606B2 (ja) 2013-03-22 2017-09-13 セイコーエプソン株式会社 検出装置、センサー、ジャイロセンサー、電子機器及び移動体
JP6213165B2 (ja) 2013-11-07 2017-10-18 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体
JP6303411B2 (ja) * 2013-11-07 2018-04-04 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体
JP6307840B2 (ja) 2013-11-07 2018-04-11 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体
JP6277689B2 (ja) 2013-11-27 2018-02-14 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体
JP6331365B2 (ja) 2013-12-05 2018-05-30 セイコーエプソン株式会社 検出装置、センサー、電子機器及び移動体

Also Published As

Publication number Publication date
JP2015090352A (ja) 2015-05-11
US9813037B2 (en) 2017-11-07
US20150122035A1 (en) 2015-05-07
CN104634336A (zh) 2015-05-20
CN104634336B (zh) 2018-07-20

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