JP6196052B2 - 複数ガス注入システム - Google Patents

複数ガス注入システム Download PDF

Info

Publication number
JP6196052B2
JP6196052B2 JP2013057417A JP2013057417A JP6196052B2 JP 6196052 B2 JP6196052 B2 JP 6196052B2 JP 2013057417 A JP2013057417 A JP 2013057417A JP 2013057417 A JP2013057417 A JP 2013057417A JP 6196052 B2 JP6196052 B2 JP 6196052B2
Authority
JP
Japan
Prior art keywords
gas
needle
valve
flow rate
injection system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013057417A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013197594A (ja
JP2013197594A5 (enExample
Inventor
ヨルゲン・ラスムッセン
ケヴィン・シー・マリナック
Original Assignee
エフ・イ−・アイ・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エフ・イ−・アイ・カンパニー filed Critical エフ・イ−・アイ・カンパニー
Publication of JP2013197594A publication Critical patent/JP2013197594A/ja
Publication of JP2013197594A5 publication Critical patent/JP2013197594A5/ja
Application granted granted Critical
Publication of JP6196052B2 publication Critical patent/JP6196052B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K11/00—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves
    • F16K11/02—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit
    • F16K11/06—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements
    • F16K11/065—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements with linearly sliding closure members
    • F16K11/07—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements with linearly sliding closure members with cylindrical slides
    • F16K11/0716—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with all movable sealing faces moving as one unit comprising only sliding valves, i.e. sliding closure elements with linearly sliding closure members with cylindrical slides with fluid passages through the valve member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/023—Means for mechanically adjusting components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013057417A 2012-03-21 2013-03-20 複数ガス注入システム Active JP6196052B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261613823P 2012-03-21 2012-03-21
US61/613,823 2012-03-21
US13/541,391 2012-07-03
US13/541,391 US9275823B2 (en) 2012-03-21 2012-07-03 Multiple gas injection system

Publications (3)

Publication Number Publication Date
JP2013197594A JP2013197594A (ja) 2013-09-30
JP2013197594A5 JP2013197594A5 (enExample) 2016-04-28
JP6196052B2 true JP6196052B2 (ja) 2017-09-13

Family

ID=47901835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013057417A Active JP6196052B2 (ja) 2012-03-21 2013-03-20 複数ガス注入システム

Country Status (4)

Country Link
US (2) US9275823B2 (enExample)
EP (1) EP2642506B1 (enExample)
JP (1) JP6196052B2 (enExample)
CN (1) CN103325651B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105438B2 (en) 2012-05-31 2015-08-11 Fei Company Imaging and processing for plasma ion source
JP6238978B2 (ja) 2012-06-29 2017-11-29 エフ・イ−・アイ・カンパニー 多種イオン源
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
JP2016065279A (ja) * 2014-09-24 2016-04-28 スタンレー電気株式会社 成膜システム
JP6270154B2 (ja) 2014-10-16 2018-01-31 株式会社フィルテック ガス生成装置およびガス生成方法
JP2016222984A (ja) 2015-06-01 2016-12-28 株式会社フィルテック ヒートビーム成膜装置
WO2017068608A1 (ja) * 2015-10-19 2017-04-27 三菱重工メカトロシステムズ株式会社 成膜装置
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
DE102016214146A1 (de) * 2016-08-01 2018-02-01 Kjellberg Stiftung Plasmabrenner
KR102190802B1 (ko) * 2016-08-29 2020-12-14 가부시키가이샤 고가네이 스위칭 밸브 및 간헐 송풍 건
JP6710609B2 (ja) * 2016-08-31 2020-06-17 ナブテスコ株式会社 スプール弁および弁システム
US9899181B1 (en) 2017-01-12 2018-02-20 Fei Company Collision ionization ion source
US9941094B1 (en) 2017-02-01 2018-04-10 Fei Company Innovative source assembly for ion beam production
JP6942347B2 (ja) * 2018-02-09 2021-09-29 国立研究開発法人量子科学技術研究開発機構 イオン源装置、粒子線発生装置、およびイオンビーム生成方法
US11261527B2 (en) 2019-08-12 2022-03-01 MEO Engineering Company, Inc. Method and apparatus for precursor gas injection
CN110486503B (zh) * 2019-08-15 2024-08-23 上海汇海真空机械设备有限公司 一种真空充氮杀虫灭菌消毒设备用的专用抽真空阀
CN111075940B (zh) * 2019-12-17 2024-06-04 广东创智智能装备有限公司 一种便于抽真空和破真空的连接阀
CN113035674B (zh) * 2021-02-07 2024-10-11 上海精测半导体技术有限公司 一种多气源气体注射装置
US20220305584A1 (en) * 2021-03-24 2022-09-29 Fei Company In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination
TW202305989A (zh) 2021-06-21 2023-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於提供氣體混合物至反應室之設備及使用其的方法
DE102021132834B4 (de) * 2021-12-13 2024-08-08 Carl Zeiss Microscopy Gmbh Gasreservoir, Gaszuführungseinrichtung mit einem Gasreservoir und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung
US12609276B2 (en) * 2023-12-21 2026-04-21 Fei Company Mixed-gas species plasma source system
JP7874670B2 (ja) * 2024-01-23 2026-06-16 日本電子株式会社 集束イオンビーム装置
CN121483949B (zh) * 2025-10-31 2026-05-12 北京中科科仪光电科技有限公司 一种用于聚焦离子束-电子束双束显微镜的气体枪

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4418924A (en) 1980-10-20 1983-12-06 Mack James F Bi-surface sealing mechanism with rolling/sliding O-ring
JPS5980777A (ja) * 1982-10-29 1984-05-10 Hitachi Ltd ガス制御装置
US4665296A (en) * 1984-04-28 1987-05-12 Neturen Co., Ltd. Method of and apparatus for igniting a high-frequency torch to create a high-temperature plasma of high purity
US4670685A (en) 1986-04-14 1987-06-02 Hughes Aircraft Company Liquid metal ion source and alloy for ion emission of multiple ionic species
JPH0748367B2 (ja) * 1989-07-27 1995-05-24 日本電子株式会社 荷電粒子線装置におけるガス導入機構
JPH03124463A (ja) 1989-10-06 1991-05-28 Seikosha Co Ltd 磁気記録装置
JPH03124463U (enExample) 1990-03-28 1991-12-17
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
JP3113674B2 (ja) * 1990-11-21 2000-12-04 株式会社日立製作所 荷電ビーム処理方法およびその装置
JPH05206033A (ja) * 1992-01-28 1993-08-13 Kokusai Electric Co Ltd Ｃｖｄ膜生成方法及び装置
JP3083401B2 (ja) * 1992-05-12 2000-09-04 日本電子株式会社 Ｆｉｂアシストデポジション装置のガス供給装置
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
JP3310136B2 (ja) 1994-09-17 2002-07-29 株式会社東芝 荷電ビーム装置
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
JP3124463B2 (ja) 1995-04-14 2001-01-15 東海興業株式会社 ウエザストリップの製造方法
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
JP2000306884A (ja) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US6414307B1 (en) 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
DE10042098A1 (de) 2000-08-26 2002-03-14 Deutsche Telekom Ag Gasversorgung für Additive Lithographie
US7106939B2 (en) * 2001-09-19 2006-09-12 3M Innovative Properties Company Optical and optoelectronic articles
JP4011900B2 (ja) * 2001-12-04 2007-11-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2003303788A (ja) * 2002-04-11 2003-10-24 Mitsubishi Electric Corp エッチング装置
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US20060022136A1 (en) 2004-07-29 2006-02-02 Moore Thomas M Multiple gas injection system for charged particle beam instruments
EP2041756B1 (en) 2006-07-14 2015-05-13 FEI Company A multi-source plasma focused ion beam system
JP4928893B2 (ja) * 2006-10-03 2012-05-09 株式会社日立ハイテクノロジーズ プラズマエッチング方法。
DE102008020145B4 (de) * 2007-04-23 2012-11-08 Hitachi High-Technologies Corporation Ionenstrahlbearbeitungs- und Betrachtungsvorrichtung und Verfahren zum Bearbeiten und Betrachten einer Probe
US8394454B2 (en) 2008-03-08 2013-03-12 Omniprobe, Inc. Method and apparatus for precursor delivery system for irradiation beam instruments
US8778804B2 (en) 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
US8253118B2 (en) 2009-10-14 2012-08-28 Fei Company Charged particle beam system having multiple user-selectable operating modes
EP2501839B1 (en) * 2009-11-16 2016-01-27 FEI Company Gas delivery for beam processing systems
EP2341525B1 (en) 2009-12-30 2013-10-23 FEI Company Plasma source for charged particle beam system
FR2956894B1 (fr) 2010-03-01 2012-07-27 Air Liquide Dispositif, installation et procede de remplissage d'un reservoir de gaz
JP6219019B2 (ja) 2011-02-25 2017-10-25 エフ・イ−・アイ・カンパニー 荷電粒子ビーム・システムにおいて大電流モードと小電流モードとを高速に切り替える方法
US8633452B2 (en) 2011-07-13 2014-01-21 Fei Company Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (ICP) ion source
US8822913B2 (en) 2011-12-06 2014-09-02 Fei Company Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

Also Published As

Publication number Publication date
US9275823B2 (en) 2016-03-01
JP2013197594A (ja) 2013-09-30
EP2642506A1 (en) 2013-09-25
CN103325651B (zh) 2017-10-24
EP2642506B1 (en) 2016-12-28
US9728375B2 (en) 2017-08-08
CN103325651A (zh) 2013-09-25
US20130248490A1 (en) 2013-09-26
US20160155607A1 (en) 2016-06-02

Similar Documents

Publication Publication Date Title
JP2013197594A (ja) 複数ガス注入システム
JP5650234B2 (ja) ビーム処理システムに対するガス送達
US7273526B2 (en) Thin-film deposition apparatus
US12614696B2 (en) Ultra high purity conditions for atomic scale processing
WO2008011552A2 (en) System and method for treating surfaces of components
JP6590820B2 (ja) 広温度範囲チャックに対する複数流体冷却システム
JP2017506828A5 (enExample)
CN105655272A (zh) 反应腔室及半导体加工设备
CN113311890B (zh) 极紫外光刻机物料传递及污染控制系统、方法
JP2000507875A (ja) 真空プロセッサの圧力を制御する方法及び装置
KR101275907B1 (ko) 기체의 도입을 통한 이온 주입 공정 중에 오염을 완화하여표면 특성을 수정하는 시스템 및 방법
US20090241834A1 (en) Substrate processing apparatus
US4889995A (en) Apparatus for analysis employing electron
CN109321897A (zh) 一种原子层沉积系统及方法
KR20140076795A (ko) 원자층 증착장치
US11970778B2 (en) Processing apparatus
KR20230096820A (ko) 고압 및 진공공정 병행 챔버장치
JP4543848B2 (ja) 半導体製造装置及びそのメンテナンス方法
WO2024129260A1 (en) Controlling gas flows in processing tool
KR20080048974A (ko) 기판 처리 장치 및 기판 처리 방법
JP2000146096A (ja) 極高真空チャンバへの微量ガス導入機構
KR20240068740A (ko) 이온 차단 플레이트를 이용하여 플라즈마를 생성하기 위한 방법 및 장치
JP5060375B2 (ja) 基板処理装置および半導体装置の製造方法
KR20260071759A (ko) 공정 튜브 및 그 사용방법
WO2009107239A1 (ja) 半導体製造装置及び半導体製造装置の配管パージ方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160314

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160314

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170124

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170422

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170623

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170626

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170718

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170817

R150 Certificate of patent or registration of utility model

Ref document number: 6196052

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250