JP6176962B2 - Ｃｖｄ反応室のプロセスチャンバの壁の洗浄方法 - Google Patents

Ｃｖｄ反応室のプロセスチャンバの壁の洗浄方法 Download PDF

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JP6176962B2
JP6176962B2 JP2013063153A JP2013063153A JP6176962B2 JP 6176962 B2 JP6176962 B2 JP 6176962B2 JP 2013063153 A JP2013063153 A JP 2013063153A JP 2013063153 A JP2013063153 A JP 2013063153A JP 6176962 B2 JP6176962 B2 JP 6176962B2
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process chamber
gas inlet
gas
slm
inlet region
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JP2013207301A (ja
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クリュッケン トーマス
クリュッケン トーマス
エイケルカンプ マルティン
エイケルカンプ マルティン
ショットカー ベルンド
ショットカー ベルンド
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アイクストロン、エスイー
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2013063153A 2012-03-28 2013-03-26 Ｃｖｄ反応室のプロセスチャンバの壁の洗浄方法 Active JP6176962B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012102661.0 2012-03-28
DE102012102661.0A DE102012102661B4 (de) 2012-03-28 2012-03-28 Verfahren zum Reinigen der Wände einer Prozesskammer eines CVD-Reaktors

Publications (2)

Publication Number Publication Date
JP2013207301A JP2013207301A (ja) 2013-10-07
JP6176962B2 true JP6176962B2 (ja) 2017-08-09

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JP2013063153A Active JP6176962B2 (ja) 2012-03-28 2013-03-26 Ｃｖｄ反応室のプロセスチャンバの壁の洗浄方法

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Country Link
JP (1) JP6176962B2 (de)
KR (1) KR102178716B1 (de)
DE (1) DE102012102661B4 (de)
TW (1) TWI573893B (de)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE46699E1 (en) 2013-01-16 2018-02-06 Greatbatch Ltd. Low impedance oxide resistant grounded capacitor for an AIMD
US9895534B2 (en) 2008-03-20 2018-02-20 Greatbatch Ltd. MLCC filter on an AIMD circuit board with conductive ground pin attached to a hermetic feedthrough ferrule
US9931514B2 (en) 2013-06-30 2018-04-03 Greatbatch Ltd. Low impedance oxide resistant grounded capacitor for an AIMD
US10080889B2 (en) 2009-03-19 2018-09-25 Greatbatch Ltd. Low inductance and low resistance hermetically sealed filtered feedthrough for an AIMD
US10350421B2 (en) 2013-06-30 2019-07-16 Greatbatch Ltd. Metallurgically bonded gold pocket pad for grounding an EMI filter to a hermetic terminal for an active implantable medical device
US10559409B2 (en) 2017-01-06 2020-02-11 Greatbatch Ltd. Process for manufacturing a leadless feedthrough for an active implantable medical device
US10561837B2 (en) 2011-03-01 2020-02-18 Greatbatch Ltd. Low equivalent series resistance RF filter for an active implantable medical device utilizing a ceramic reinforced metal composite filled via
US10589107B2 (en) 2016-11-08 2020-03-17 Greatbatch Ltd. Circuit board mounted filtered feedthrough assembly having a composite conductive lead for an AIMD
US10905888B2 (en) 2018-03-22 2021-02-02 Greatbatch Ltd. Electrical connection for an AIMD EMI filter utilizing an anisotropic conductive layer
US10912945B2 (en) 2018-03-22 2021-02-09 Greatbatch Ltd. Hermetic terminal for an active implantable medical device having a feedthrough capacitor partially overhanging a ferrule for high effective capacitance area
US11147977B2 (en) 2008-03-20 2021-10-19 Greatbatch Ltd. MLCC filter on an aimd circuit board conductively connected to a ground pin attached to a hermetic feedthrough ferrule
US11198014B2 (en) 2011-03-01 2021-12-14 Greatbatch Ltd. Hermetically sealed filtered feedthrough assembly having a capacitor with an oxide resistant electrical connection to an active implantable medical device housing

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013104105A1 (de) 2013-04-23 2014-10-23 Aixtron Se MOCVD-Schichtwachstumsverfahren mit nachfolgendem mehrstufigen Reinigungsschritt
TWI563542B (en) * 2014-11-21 2016-12-21 Hermes Epitek Corp Approach of controlling the wafer and the thin film surface temperature
DE102015101462A1 (de) 2015-02-02 2016-08-04 Aixtron Se Verfahren und Vorrichtung zum Abscheiden einer III-V-Halbleiterschicht
JP7042689B2 (ja) * 2018-05-23 2022-03-28 東京エレクトロン株式会社 サセプタのドライクリーニング方法及び基板処理装置

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JPH0279420A (ja) * 1988-09-14 1990-03-20 Babcock Hitachi Kk 光励起ｃｖｄ装置
JP3326538B2 (ja) * 1991-10-24 2002-09-24 東京エレクトロン株式会社 コールドウォール形成膜処理装置
US5609721A (en) * 1994-03-11 1997-03-11 Fujitsu Limited Semiconductor device manufacturing apparatus and its cleaning method
JPH0888177A (ja) * 1994-09-19 1996-04-02 Fujitsu Ltd 薄膜形成装置及びクリーニング方法
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
JP2000355767A (ja) * 1999-06-11 2000-12-26 Nippon Sanso Corp シリコンｃｖｄ装置
JP4733856B2 (ja) * 2001-05-10 2011-07-27 ルネサスエレクトロニクス株式会社 高密度プラズマｃｖｄ装置のリモートプラズマクリーニング方法
DE10163394A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
DE102006018515A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
DE102007009145A1 (de) * 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
JP2010034424A (ja) 2008-07-30 2010-02-12 Sumco Corp エピタキシャル成長炉内のガスクリーニング方法
US20100154826A1 (en) * 2008-12-19 2010-06-24 Tokyo Electron Limited System and Method For Rinse Optimization
DE102010000554A1 (de) * 2009-03-16 2010-09-30 Aixtron Ag MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte
DE102011054566A1 (de) 2011-10-18 2013-04-18 Aixtron Se Vorrichtung und Verfahren zum Abscheiden mehrkomponentiger Schichten, insbesondere metallorganischer Halbleiterschichten

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11013928B2 (en) 2008-03-20 2021-05-25 Greatbatch Ltd. Ground electrical path from an MLCC filter capacitor on an AIMD circuit board to the ferrule of a hermetic feedthrough
US10016595B2 (en) 2008-03-20 2018-07-10 Greatbatch Ltd. MLCC filter on an AIMD circuit board with ground electrical connection to a gold braze between a hermetic feedthrough ferrule and insulator
US11648409B2 (en) 2008-03-20 2023-05-16 Greatbatch Ltd. Ground electrical path from an MLCC filter capacitor on an AIMD circuit board to the ferrule of a hermetic feedthrough
US10016596B2 (en) 2008-03-20 2018-07-10 Greatbatch Ltd. MLCC filter on an AIMD circuit board having an external ground plate adjacent to the hermetic seal insulator
US10722706B2 (en) 2008-03-20 2020-07-28 Greatbatch Ltd. Filtered feedthrough assembly having an MLCC filter capacitor on an AIMD circuit board attached to the ferrule of a hermetic feedthrough
US11241581B2 (en) 2008-03-20 2022-02-08 Greatbatch Ltd. Feedthrough terminal assembly with an electrically conductive pad conductively connected to a terminal pin
US10099051B2 (en) 2008-03-20 2018-10-16 Greatbatch Ltd. MLCC filter on an AIMD circuit board with direct connect to the gold braze hermetically sealing a feed through insulator to a ferrule
US10857369B2 (en) 2008-03-20 2020-12-08 Greatbatch Ltd. Ground electrical path from an MLCC filter capacitor on an AIMD circuit board to the ferrule of a hermetic feedthrough
US11147977B2 (en) 2008-03-20 2021-10-19 Greatbatch Ltd. MLCC filter on an aimd circuit board conductively connected to a ground pin attached to a hermetic feedthrough ferrule
US10874866B2 (en) 2008-03-20 2020-12-29 Greatbatch Ltd. Flat-through capacitor mounted in a tombstone position on a hermetic feedthrough for an active implantable medical device
US10124164B2 (en) 2008-03-20 2018-11-13 Greatbatch Ltd. MLCC filter on an AIMD circuit board with conductive ground pin attached to a hermetic feedthrough ferrule
US9895534B2 (en) 2008-03-20 2018-02-20 Greatbatch Ltd. MLCC filter on an AIMD circuit board with conductive ground pin attached to a hermetic feedthrough ferrule
US10080889B2 (en) 2009-03-19 2018-09-25 Greatbatch Ltd. Low inductance and low resistance hermetically sealed filtered feedthrough for an AIMD
US11071858B2 (en) 2011-03-01 2021-07-27 Greatbatch Ltd. Hermetically sealed filtered feedthrough having platinum sealed directly to the insulator in a via hole
US10561837B2 (en) 2011-03-01 2020-02-18 Greatbatch Ltd. Low equivalent series resistance RF filter for an active implantable medical device utilizing a ceramic reinforced metal composite filled via
US10596369B2 (en) 2011-03-01 2020-03-24 Greatbatch Ltd. Low equivalent series resistance RF filter for an active implantable medical device
US11198014B2 (en) 2011-03-01 2021-12-14 Greatbatch Ltd. Hermetically sealed filtered feedthrough assembly having a capacitor with an oxide resistant electrical connection to an active implantable medical device housing
USRE46699E1 (en) 2013-01-16 2018-02-06 Greatbatch Ltd. Low impedance oxide resistant grounded capacitor for an AIMD
US9931514B2 (en) 2013-06-30 2018-04-03 Greatbatch Ltd. Low impedance oxide resistant grounded capacitor for an AIMD
US10350421B2 (en) 2013-06-30 2019-07-16 Greatbatch Ltd. Metallurgically bonded gold pocket pad for grounding an EMI filter to a hermetic terminal for an active implantable medical device
US10589107B2 (en) 2016-11-08 2020-03-17 Greatbatch Ltd. Circuit board mounted filtered feedthrough assembly having a composite conductive lead for an AIMD
US10559409B2 (en) 2017-01-06 2020-02-11 Greatbatch Ltd. Process for manufacturing a leadless feedthrough for an active implantable medical device
US10912945B2 (en) 2018-03-22 2021-02-09 Greatbatch Ltd. Hermetic terminal for an active implantable medical device having a feedthrough capacitor partially overhanging a ferrule for high effective capacitance area
US10905888B2 (en) 2018-03-22 2021-02-02 Greatbatch Ltd. Electrical connection for an AIMD EMI filter utilizing an anisotropic conductive layer
US11712571B2 (en) 2018-03-22 2023-08-01 Greatbatch Ltd. Electrical connection for a hermetic terminal for an active implantable medical device utilizing a ferrule pocket

Also Published As

Publication number Publication date
JP2013207301A (ja) 2013-10-07
TWI573893B (zh) 2017-03-11
TW201348506A (zh) 2013-12-01
KR102178716B1 (ko) 2020-11-13
DE102012102661A1 (de) 2013-10-02
KR20130110079A (ko) 2013-10-08
DE102012102661B4 (de) 2024-01-18

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