JP6162625B2 - 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 - Google Patents

結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 Download PDF

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JP6162625B2
JP6162625B2 JP2014036375A JP2014036375A JP6162625B2 JP 6162625 B2 JP6162625 B2 JP 6162625B2 JP 2014036375 A JP2014036375 A JP 2014036375A JP 2014036375 A JP2014036375 A JP 2014036375A JP 6162625 B2 JP6162625 B2 JP 6162625B2
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crystal growth
crystal
crucible
unit
distillation
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JP2014036375A
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JP2015160771A (ja
JP2015160771A5 (enExample
Inventor
喬之 神田
喬之 神田
信也 小南
信也 小南
上野　雄一郎
雄一郎 上野
崇章 石津
崇章 石津
知之 清野
知之 清野
高橋　勲
勲 高橋
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2014036375A priority Critical patent/JP6162625B2/ja
Priority to EP14883763.6A priority patent/EP3112503A4/en
Priority to CN201480076252.0A priority patent/CN106062258B/zh
Priority to PCT/JP2014/077016 priority patent/WO2015129091A1/ja
Priority to US15/116,532 priority patent/US20160348270A1/en
Publication of JP2015160771A publication Critical patent/JP2015160771A/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014036375A 2014-02-27 2014-02-27 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 Expired - Fee Related JP6162625B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014036375A JP6162625B2 (ja) 2014-02-27 2014-02-27 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
EP14883763.6A EP3112503A4 (en) 2014-02-27 2014-10-08 Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals
CN201480076252.0A CN106062258B (zh) 2014-02-27 2014-10-08 晶体培养用坩埚、具备该晶体培养用坩埚的晶体培养装置以及晶体培养方法
PCT/JP2014/077016 WO2015129091A1 (ja) 2014-02-27 2014-10-08 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
US15/116,532 US20160348270A1 (en) 2014-02-27 2014-10-08 Crucible for crystal growth, crystal growing apparatus provided therewith, and method for growing crystals

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JP2014036375A JP6162625B2 (ja) 2014-02-27 2014-02-27 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法

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JP2015160771A JP2015160771A (ja) 2015-09-07
JP2015160771A5 JP2015160771A5 (enExample) 2016-11-10
JP6162625B2 true JP6162625B2 (ja) 2017-07-12

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US (1) US20160348270A1 (enExample)
EP (1) EP3112503A4 (enExample)
JP (1) JP6162625B2 (enExample)
CN (1) CN106062258B (enExample)
WO (1) WO2015129091A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018039583A1 (en) * 2016-08-26 2018-03-01 Northwestern University Methods for the synthesis, purification and crystal growth of inorganic crystals for hard radiation detectors
CN106191785B (zh) * 2016-09-27 2018-09-18 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统
CN116516461A (zh) * 2018-11-22 2023-08-01 北京滨松光子技术股份有限公司 一种溴化铊半导体单晶的生长方法及设备

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DE1143644B (de) * 1960-10-12 1963-02-14 Knapsack Ag Verfahren zur Gewinnung von Magnesium durch elektrothermische Reduktion von Dolomit
JPS55121999A (en) * 1979-03-15 1980-09-19 Shiro Sakuragi Preparing high-purity metal halide
JPS61201690A (ja) * 1985-03-04 1986-09-06 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶の育成方法および育成装置
JPH0791059B2 (ja) * 1987-05-26 1995-10-04 三菱マテリアル株式会社 ガリウムの回収方法
JPH0710674A (ja) * 1993-06-23 1995-01-13 Mitsubishi Chem Corp 無機化合物単結晶成長方法
JP2002286847A (ja) * 2001-03-22 2002-10-03 Reitekku:Kk 半導体放射線検出装置
JP4187236B2 (ja) * 2002-08-12 2008-11-26 スガイ化学工業株式会社 アダマンタノンの精製方法
JP5143440B2 (ja) * 2007-02-01 2013-02-13 森田化学工業株式会社 フッ化水素酸、塩酸およびケイフッ化水素酸を含有する廃液から酸成分を分離・回収する方法およびその装置
CN100516319C (zh) * 2007-12-19 2009-07-22 华中科技大学 一种无籽晶垂直气相生长溴化铊单晶方法
CN100516318C (zh) * 2007-12-19 2009-07-22 华中科技大学 一种自发成核生长溴化铊单晶方法
JP2009256119A (ja) * 2008-04-14 2009-11-05 Hitachi Chem Co Ltd 原料蒸留用器具、及び、シンチレータ用結晶の製造方法
JP2011225742A (ja) * 2010-04-21 2011-11-10 Hitachi Chem Co Ltd 原料精製装置およびシンチレータ用単結晶の製造方法
DE102010044017B4 (de) * 2010-11-17 2013-06-20 Carl Zeiss Smt Gmbh Verfahren zur Herstellung von Alkali- oder Erdalkalifluorid-Kristallen und nach dem Verfahren hergestellte Kristalle
US8512470B2 (en) * 2011-04-08 2013-08-20 China Crystal Technologies Co. Ltd System and methods for growing high-resistance single crystals

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Publication number Publication date
EP3112503A4 (en) 2017-08-23
WO2015129091A1 (ja) 2015-09-03
JP2015160771A (ja) 2015-09-07
CN106062258A (zh) 2016-10-26
EP3112503A1 (en) 2017-01-04
CN106062258B (zh) 2018-05-29
US20160348270A1 (en) 2016-12-01

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