JP2015160771A5 - - Google Patents
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- Publication number
- JP2015160771A5 JP2015160771A5 JP2014036375A JP2014036375A JP2015160771A5 JP 2015160771 A5 JP2015160771 A5 JP 2015160771A5 JP 2014036375 A JP2014036375 A JP 2014036375A JP 2014036375 A JP2014036375 A JP 2014036375A JP 2015160771 A5 JP2015160771 A5 JP 2015160771A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- crucible
- crystal
- unit
- distillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 81
- 238000004821 distillation Methods 0.000 claims description 55
- 239000002994 raw material Substances 0.000 claims description 25
- 238000011084 recovery Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 2
- 238000002109 crystal growth method Methods 0.000 claims 8
- 238000009833 condensation Methods 0.000 claims 2
- 230000005494 condensation Effects 0.000 claims 2
- 238000012423 maintenance Methods 0.000 claims 1
- 238000007670 refining Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014036375A JP6162625B2 (ja) | 2014-02-27 | 2014-02-27 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
| EP14883763.6A EP3112503A4 (en) | 2014-02-27 | 2014-10-08 | Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals |
| CN201480076252.0A CN106062258B (zh) | 2014-02-27 | 2014-10-08 | 晶体培养用坩埚、具备该晶体培养用坩埚的晶体培养装置以及晶体培养方法 |
| PCT/JP2014/077016 WO2015129091A1 (ja) | 2014-02-27 | 2014-10-08 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
| US15/116,532 US20160348270A1 (en) | 2014-02-27 | 2014-10-08 | Crucible for crystal growth, crystal growing apparatus provided therewith, and method for growing crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014036375A JP6162625B2 (ja) | 2014-02-27 | 2014-02-27 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015160771A JP2015160771A (ja) | 2015-09-07 |
| JP2015160771A5 true JP2015160771A5 (enExample) | 2016-11-10 |
| JP6162625B2 JP6162625B2 (ja) | 2017-07-12 |
Family
ID=54008437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014036375A Expired - Fee Related JP6162625B2 (ja) | 2014-02-27 | 2014-02-27 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20160348270A1 (enExample) |
| EP (1) | EP3112503A4 (enExample) |
| JP (1) | JP6162625B2 (enExample) |
| CN (1) | CN106062258B (enExample) |
| WO (1) | WO2015129091A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018039583A1 (en) * | 2016-08-26 | 2018-03-01 | Northwestern University | Methods for the synthesis, purification and crystal growth of inorganic crystals for hard radiation detectors |
| CN106191785B (zh) * | 2016-09-27 | 2018-09-18 | 京东方科技集团股份有限公司 | 坩埚、蒸镀装置及蒸镀系统 |
| CN116516461A (zh) * | 2018-11-22 | 2023-08-01 | 北京滨松光子技术股份有限公司 | 一种溴化铊半导体单晶的生长方法及设备 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1143644B (de) * | 1960-10-12 | 1963-02-14 | Knapsack Ag | Verfahren zur Gewinnung von Magnesium durch elektrothermische Reduktion von Dolomit |
| JPS55121999A (en) * | 1979-03-15 | 1980-09-19 | Shiro Sakuragi | Preparing high-purity metal halide |
| JPS61201690A (ja) * | 1985-03-04 | 1986-09-06 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の育成方法および育成装置 |
| JPH0791059B2 (ja) * | 1987-05-26 | 1995-10-04 | 三菱マテリアル株式会社 | ガリウムの回収方法 |
| JPH0710674A (ja) * | 1993-06-23 | 1995-01-13 | Mitsubishi Chem Corp | 無機化合物単結晶成長方法 |
| JP2002286847A (ja) * | 2001-03-22 | 2002-10-03 | Reitekku:Kk | 半導体放射線検出装置 |
| JP4187236B2 (ja) * | 2002-08-12 | 2008-11-26 | スガイ化学工業株式会社 | アダマンタノンの精製方法 |
| JP5143440B2 (ja) * | 2007-02-01 | 2013-02-13 | 森田化学工業株式会社 | フッ化水素酸、塩酸およびケイフッ化水素酸を含有する廃液から酸成分を分離・回収する方法およびその装置 |
| CN100516319C (zh) * | 2007-12-19 | 2009-07-22 | 华中科技大学 | 一种无籽晶垂直气相生长溴化铊单晶方法 |
| CN100516318C (zh) * | 2007-12-19 | 2009-07-22 | 华中科技大学 | 一种自发成核生长溴化铊单晶方法 |
| JP2009256119A (ja) * | 2008-04-14 | 2009-11-05 | Hitachi Chem Co Ltd | 原料蒸留用器具、及び、シンチレータ用結晶の製造方法 |
| JP2011225742A (ja) * | 2010-04-21 | 2011-11-10 | Hitachi Chem Co Ltd | 原料精製装置およびシンチレータ用単結晶の製造方法 |
| DE102010044017B4 (de) * | 2010-11-17 | 2013-06-20 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung von Alkali- oder Erdalkalifluorid-Kristallen und nach dem Verfahren hergestellte Kristalle |
| US8512470B2 (en) * | 2011-04-08 | 2013-08-20 | China Crystal Technologies Co. Ltd | System and methods for growing high-resistance single crystals |
-
2014
- 2014-02-27 JP JP2014036375A patent/JP6162625B2/ja not_active Expired - Fee Related
- 2014-10-08 CN CN201480076252.0A patent/CN106062258B/zh not_active Expired - Fee Related
- 2014-10-08 EP EP14883763.6A patent/EP3112503A4/en not_active Withdrawn
- 2014-10-08 WO PCT/JP2014/077016 patent/WO2015129091A1/ja not_active Ceased
- 2014-10-08 US US15/116,532 patent/US20160348270A1/en not_active Abandoned
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