JP6150490B2 - 検出装置、露光装置、それを用いたデバイスの製造方法 - Google Patents

検出装置、露光装置、それを用いたデバイスの製造方法 Download PDF

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Publication number
JP6150490B2
JP6150490B2 JP2012231653A JP2012231653A JP6150490B2 JP 6150490 B2 JP6150490 B2 JP 6150490B2 JP 2012231653 A JP2012231653 A JP 2012231653A JP 2012231653 A JP2012231653 A JP 2012231653A JP 6150490 B2 JP6150490 B2 JP 6150490B2
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Japan
Prior art keywords
detection system
wafer
measured
mark
thickness
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JP2012231653A
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English (en)
Japanese (ja)
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JP2014085123A5 (enExample
JP2014085123A (ja
Inventor
普教 前田
普教 前田
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Canon Inc
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Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012231653A priority Critical patent/JP6150490B2/ja
Priority to TW102136354A priority patent/TWI534558B/zh
Priority to US14/055,323 priority patent/US9400436B2/en
Priority to EP13004976.0A priority patent/EP2722714A3/en
Priority to KR1020130124407A priority patent/KR101672576B1/ko
Publication of JP2014085123A publication Critical patent/JP2014085123A/ja
Publication of JP2014085123A5 publication Critical patent/JP2014085123A5/ja
Application granted granted Critical
Publication of JP6150490B2 publication Critical patent/JP6150490B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0666—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using an exciting beam and a detection beam including surface acoustic waves [SAW]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2012231653A 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法 Active JP6150490B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法
TW102136354A TWI534558B (zh) 2012-10-19 2013-10-08 偵測裝置、曝光設備及使用其之裝置製造方法
US14/055,323 US9400436B2 (en) 2012-10-19 2013-10-16 Detection device, exposure apparatus, and device manufacturing method using same
EP13004976.0A EP2722714A3 (en) 2012-10-19 2013-10-17 Detection device, exposure apparatus and device manufacturing method using such an exposure apparatus
KR1020130124407A KR101672576B1 (ko) 2012-10-19 2013-10-18 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2014085123A JP2014085123A (ja) 2014-05-12
JP2014085123A5 JP2014085123A5 (enExample) 2015-12-03
JP6150490B2 true JP6150490B2 (ja) 2017-06-21

Family

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JP2012231653A Active JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Country Status (5)

Country Link
US (1) US9400436B2 (enExample)
EP (1) EP2722714A3 (enExample)
JP (1) JP6150490B2 (enExample)
KR (1) KR101672576B1 (enExample)
TW (1) TWI534558B (enExample)

Families Citing this family (11)

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TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN106247958A (zh) * 2016-07-11 2016-12-21 京东方科技集团股份有限公司 测量设备及测量方法
SG11201900623PA (en) 2016-08-30 2019-02-27 Asml Netherlands Bv Position sensor, lithographic apparatus and method for manufacturing devices
JP2019096757A (ja) * 2017-11-24 2019-06-20 東京エレクトロン株式会社 測定器のずれ量を求める方法、及び、処理システムにおける搬送位置データを較正する方法
EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
JP7129325B2 (ja) * 2018-12-14 2022-09-01 東京エレクトロン株式会社 搬送方法及び搬送システム
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
JP7446131B2 (ja) 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
US11640118B2 (en) * 2020-08-17 2023-05-02 Tokyo Electron Limited Method of pattern alignment for field stitching
WO2025234015A1 (ja) * 2024-05-08 2025-11-13 株式会社ニコン 位置検出方法、位置検出システム、及び露光装置

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Also Published As

Publication number Publication date
US20140111788A1 (en) 2014-04-24
EP2722714A2 (en) 2014-04-23
KR20140050562A (ko) 2014-04-29
TW201416805A (zh) 2014-05-01
JP2014085123A (ja) 2014-05-12
KR101672576B1 (ko) 2016-11-03
TWI534558B (zh) 2016-05-21
EP2722714A3 (en) 2015-06-17
US9400436B2 (en) 2016-07-26

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