JP2014085123A5 - - Google Patents

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Publication number
JP2014085123A5
JP2014085123A5 JP2012231653A JP2012231653A JP2014085123A5 JP 2014085123 A5 JP2014085123 A5 JP 2014085123A5 JP 2012231653 A JP2012231653 A JP 2012231653A JP 2012231653 A JP2012231653 A JP 2012231653A JP 2014085123 A5 JP2014085123 A5 JP 2014085123A5
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JP
Japan
Prior art keywords
measured
mark
focus position
thickness
detection
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JP2012231653A
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English (en)
Japanese (ja)
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JP6150490B2 (ja
JP2014085123A (ja
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Priority claimed from JP2012231653A external-priority patent/JP6150490B2/ja
Priority to JP2012231653A priority Critical patent/JP6150490B2/ja
Priority to TW102136354A priority patent/TWI534558B/zh
Priority to US14/055,323 priority patent/US9400436B2/en
Priority to EP13004976.0A priority patent/EP2722714A3/en
Priority to KR1020130124407A priority patent/KR101672576B1/ko
Publication of JP2014085123A publication Critical patent/JP2014085123A/ja
Publication of JP2014085123A5 publication Critical patent/JP2014085123A5/ja
Publication of JP6150490B2 publication Critical patent/JP6150490B2/ja
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JP2012231653A 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法 Active JP6150490B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法
TW102136354A TWI534558B (zh) 2012-10-19 2013-10-08 偵測裝置、曝光設備及使用其之裝置製造方法
US14/055,323 US9400436B2 (en) 2012-10-19 2013-10-16 Detection device, exposure apparatus, and device manufacturing method using same
EP13004976.0A EP2722714A3 (en) 2012-10-19 2013-10-17 Detection device, exposure apparatus and device manufacturing method using such an exposure apparatus
KR1020130124407A KR101672576B1 (ko) 2012-10-19 2013-10-18 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2014085123A JP2014085123A (ja) 2014-05-12
JP2014085123A5 true JP2014085123A5 (enExample) 2015-12-03
JP6150490B2 JP6150490B2 (ja) 2017-06-21

Family

ID=49385090

Family Applications (1)

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JP2012231653A Active JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Country Status (5)

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US (1) US9400436B2 (enExample)
EP (1) EP2722714A3 (enExample)
JP (1) JP6150490B2 (enExample)
KR (1) KR101672576B1 (enExample)
TW (1) TWI534558B (enExample)

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN106247958A (zh) * 2016-07-11 2016-12-21 京东方科技集团股份有限公司 测量设备及测量方法
SG11201900623PA (en) 2016-08-30 2019-02-27 Asml Netherlands Bv Position sensor, lithographic apparatus and method for manufacturing devices
JP2019096757A (ja) * 2017-11-24 2019-06-20 東京エレクトロン株式会社 測定器のずれ量を求める方法、及び、処理システムにおける搬送位置データを較正する方法
EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
JP7129325B2 (ja) * 2018-12-14 2022-09-01 東京エレクトロン株式会社 搬送方法及び搬送システム
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
JP7446131B2 (ja) 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
US11640118B2 (en) * 2020-08-17 2023-05-02 Tokyo Electron Limited Method of pattern alignment for field stitching
WO2025234015A1 (ja) * 2024-05-08 2025-11-13 株式会社ニコン 位置検出方法、位置検出システム、及び露光装置

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
DE69329611T2 (de) * 1992-08-19 2001-05-03 Canon K.K., Tokio/Tokyo Verfahren zur Registrierung mittels eines projizierenden optischen System, Belichtungsapparat zu dessen Durchführung und sowie Halbleiter-Herstellungsverfahren das diesen Belichtungsapparat verwendet
US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
US5671054A (en) * 1995-07-18 1997-09-23 Nikon Corporation Method and apparatus for measuring position of pattern formed on a substrate having a thickness
DE19733890C2 (de) * 1996-08-04 2000-03-16 Matsushita Electric Industrial Co Ltd Verfahren zum Vermessen eines Mediums und Vorrichtung dazu
US5744814A (en) * 1997-03-24 1998-04-28 Nec Corporation Method and apparatus for scanning exposure having thickness measurements of a film surface
US6376329B1 (en) * 1997-08-04 2002-04-23 Nikon Corporation Semiconductor wafer alignment using backside illumination
US5781303A (en) * 1997-08-29 1998-07-14 Becton Dickinson And Company Method for determining the thickness of an optical sample
AU2001225543A1 (en) * 2000-01-21 2001-08-20 Hamamatsu Photonics K.K. Thickness measuring apparatus, thickness measuring method, and wet etching apparatus and wet etching method utilizing them
US6768539B2 (en) 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
KR100438787B1 (ko) * 2002-05-13 2004-07-05 삼성전자주식회사 박막 두께 측정 방법
JP2005005444A (ja) * 2003-06-11 2005-01-06 Nikon Corp アライメント装置、露光装置、アライメント方法、露光方法及び位置情報検出方法
JP5018004B2 (ja) * 2006-10-11 2012-09-05 株式会社ニコン 顕微鏡、マーク検出方法、ウェハ接合装置、および、積層3次元半導体装置の製造方法
US20080292177A1 (en) * 2007-05-23 2008-11-27 Sheets Ronald E System and Method for Providing Backside Alignment in a Lithographic Projection System
TW200938803A (en) 2008-03-07 2009-09-16 Univ Nat Formosa Device and method for testing thickness and gaps of transparent objects by means of dual optical probes
JP5406624B2 (ja) * 2009-08-10 2014-02-05 キヤノン株式会社 検出装置、露光装置及びデバイスの製造方法
JP2012195380A (ja) * 2011-03-15 2012-10-11 Nikon Corp マーク検出方法及び装置、並びに露光方法及び装置
JP6025346B2 (ja) * 2012-03-05 2016-11-16 キヤノン株式会社 検出装置、露光装置及びデバイスを製造する方法

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