JP2014085123A5 - - Google Patents

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Publication number
JP2014085123A5
JP2014085123A5 JP2012231653A JP2012231653A JP2014085123A5 JP 2014085123 A5 JP2014085123 A5 JP 2014085123A5 JP 2012231653 A JP2012231653 A JP 2012231653A JP 2012231653 A JP2012231653 A JP 2012231653A JP 2014085123 A5 JP2014085123 A5 JP 2014085123A5
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JP
Japan
Prior art keywords
measured
mark
focus position
thickness
detection
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JP2012231653A
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English (en)
Japanese (ja)
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JP6150490B2 (ja
JP2014085123A (ja
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Priority claimed from JP2012231653A external-priority patent/JP6150490B2/ja
Priority to JP2012231653A priority Critical patent/JP6150490B2/ja
Priority to TW102136354A priority patent/TWI534558B/zh
Priority to US14/055,323 priority patent/US9400436B2/en
Priority to EP13004976.0A priority patent/EP2722714A3/en
Priority to KR1020130124407A priority patent/KR101672576B1/ko
Publication of JP2014085123A publication Critical patent/JP2014085123A/ja
Publication of JP2014085123A5 publication Critical patent/JP2014085123A5/ja
Publication of JP6150490B2 publication Critical patent/JP6150490B2/ja
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JP2012231653A 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法 Active JP6150490B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法
TW102136354A TWI534558B (zh) 2012-10-19 2013-10-08 偵測裝置、曝光設備及使用其之裝置製造方法
US14/055,323 US9400436B2 (en) 2012-10-19 2013-10-16 Detection device, exposure apparatus, and device manufacturing method using same
EP13004976.0A EP2722714A3 (en) 2012-10-19 2013-10-17 Detection device, exposure apparatus and device manufacturing method using such an exposure apparatus
KR1020130124407A KR101672576B1 (ko) 2012-10-19 2013-10-18 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2014085123A JP2014085123A (ja) 2014-05-12
JP2014085123A5 true JP2014085123A5 (enExample) 2015-12-03
JP6150490B2 JP6150490B2 (ja) 2017-06-21

Family

ID=49385090

Family Applications (1)

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JP2012231653A Active JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Country Status (5)

Country Link
US (1) US9400436B2 (enExample)
EP (1) EP2722714A3 (enExample)
JP (1) JP6150490B2 (enExample)
KR (1) KR101672576B1 (enExample)
TW (1) TWI534558B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN106247958A (zh) * 2016-07-11 2016-12-21 京东方科技集团股份有限公司 测量设备及测量方法
JP6744986B2 (ja) 2016-08-30 2020-08-19 エーエスエムエル ネザーランズ ビー．ブイ． 位置センサ、リソグラフィ装置およびデバイス製造方法
JP2019096757A (ja) * 2017-11-24 2019-06-20 東京エレクトロン株式会社 測定器のずれ量を求める方法、及び、処理システムにおける搬送位置データを較正する方法
EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
JP7129325B2 (ja) * 2018-12-14 2022-09-01 東京エレクトロン株式会社 搬送方法及び搬送システム
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
JP7446131B2 (ja) 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
WO2022040221A1 (en) * 2020-08-17 2022-02-24 Tokyo Electron Limited Method for producing overlay results with absolute reference for semiconductor manufacturing
WO2025234015A1 (ja) * 2024-05-08 2025-11-13 株式会社ニコン 位置検出方法、位置検出システム、及び露光装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0585041B1 (en) * 1992-08-19 2000-11-02 Canon Kabushiki Kaisha Registration method usable with a projection optical system, exposure apparatus therefor and method of manufacturing a semiconductor device by using such exposure apparatus
US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
US5671054A (en) * 1995-07-18 1997-09-23 Nikon Corporation Method and apparatus for measuring position of pattern formed on a substrate having a thickness
DE19733890C2 (de) * 1996-08-04 2000-03-16 Matsushita Electric Industrial Co Ltd Verfahren zum Vermessen eines Mediums und Vorrichtung dazu
US5744814A (en) * 1997-03-24 1998-04-28 Nec Corporation Method and apparatus for scanning exposure having thickness measurements of a film surface
US6376329B1 (en) * 1997-08-04 2002-04-23 Nikon Corporation Semiconductor wafer alignment using backside illumination
US5781303A (en) * 1997-08-29 1998-07-14 Becton Dickinson And Company Method for determining the thickness of an optical sample
ATE396497T1 (de) * 2000-01-21 2008-06-15 Hamamatsu Photonics Kk Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden
US6768539B2 (en) 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
KR100438787B1 (ko) * 2002-05-13 2004-07-05 삼성전자주식회사 박막 두께 측정 방법
JP2005005444A (ja) * 2003-06-11 2005-01-06 Nikon Corp アライメント装置、露光装置、アライメント方法、露光方法及び位置情報検出方法
JP5018004B2 (ja) * 2006-10-11 2012-09-05 株式会社ニコン 顕微鏡、マーク検出方法、ウェハ接合装置、および、積層３次元半導体装置の製造方法
US20080292177A1 (en) * 2007-05-23 2008-11-27 Sheets Ronald E System and Method for Providing Backside Alignment in a Lithographic Projection System
TW200938803A (en) 2008-03-07 2009-09-16 Univ Nat Formosa Device and method for testing thickness and gaps of transparent objects by means of dual optical probes
JP5406624B2 (ja) * 2009-08-10 2014-02-05 キヤノン株式会社 検出装置、露光装置及びデバイスの製造方法
JP2012195380A (ja) * 2011-03-15 2012-10-11 Nikon Corp マーク検出方法及び装置、並びに露光方法及び装置
JP6025346B2 (ja) * 2012-03-05 2016-11-16 キヤノン株式会社 検出装置、露光装置及びデバイスを製造する方法

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