TWI534558B - 偵測裝置、曝光設備及使用其之裝置製造方法 - Google Patents

偵測裝置、曝光設備及使用其之裝置製造方法 Download PDF

Info

Publication number
TWI534558B
TWI534558B TW102136354A TW102136354A TWI534558B TW I534558 B TWI534558 B TW I534558B TW 102136354 A TW102136354 A TW 102136354A TW 102136354 A TW102136354 A TW 102136354A TW I534558 B TWI534558 B TW I534558B
Authority
TW
Taiwan
Prior art keywords
wafer
mark
detecting
focus position
thickness
Prior art date
Application number
TW102136354A
Other languages
English (en)
Chinese (zh)
Other versions
TW201416805A (zh
Inventor
前田普教
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201416805A publication Critical patent/TW201416805A/zh
Application granted granted Critical
Publication of TWI534558B publication Critical patent/TWI534558B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0666—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using an exciting beam and a detection beam including surface acoustic waves [SAW]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H10P74/238—
    • H10P76/2041—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Acoustics & Sound (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW102136354A 2012-10-19 2013-10-08 偵測裝置、曝光設備及使用其之裝置製造方法 TWI534558B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
TW201416805A TW201416805A (zh) 2014-05-01
TWI534558B true TWI534558B (zh) 2016-05-21

Family

ID=49385090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102136354A TWI534558B (zh) 2012-10-19 2013-10-08 偵測裝置、曝光設備及使用其之裝置製造方法

Country Status (5)

Country Link
US (1) US9400436B2 (enExample)
EP (1) EP2722714A3 (enExample)
JP (1) JP6150490B2 (enExample)
KR (1) KR101672576B1 (enExample)
TW (1) TWI534558B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN106247958A (zh) * 2016-07-11 2016-12-21 京东方科技集团股份有限公司 测量设备及测量方法
JP6744986B2 (ja) 2016-08-30 2020-08-19 エーエスエムエル ネザーランズ ビー．ブイ． 位置センサ、リソグラフィ装置およびデバイス製造方法
JP2019096757A (ja) * 2017-11-24 2019-06-20 東京エレクトロン株式会社 測定器のずれ量を求める方法、及び、処理システムにおける搬送位置データを較正する方法
EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
JP7129325B2 (ja) * 2018-12-14 2022-09-01 東京エレクトロン株式会社 搬送方法及び搬送システム
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
JP7446131B2 (ja) 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
WO2022040221A1 (en) * 2020-08-17 2022-02-24 Tokyo Electron Limited Method for producing overlay results with absolute reference for semiconductor manufacturing
WO2025234015A1 (ja) * 2024-05-08 2025-11-13 株式会社ニコン 位置検出方法、位置検出システム、及び露光装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0585041B1 (en) * 1992-08-19 2000-11-02 Canon Kabushiki Kaisha Registration method usable with a projection optical system, exposure apparatus therefor and method of manufacturing a semiconductor device by using such exposure apparatus
US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
US5671054A (en) * 1995-07-18 1997-09-23 Nikon Corporation Method and apparatus for measuring position of pattern formed on a substrate having a thickness
DE19733890C2 (de) * 1996-08-04 2000-03-16 Matsushita Electric Industrial Co Ltd Verfahren zum Vermessen eines Mediums und Vorrichtung dazu
US5744814A (en) * 1997-03-24 1998-04-28 Nec Corporation Method and apparatus for scanning exposure having thickness measurements of a film surface
US6376329B1 (en) * 1997-08-04 2002-04-23 Nikon Corporation Semiconductor wafer alignment using backside illumination
US5781303A (en) * 1997-08-29 1998-07-14 Becton Dickinson And Company Method for determining the thickness of an optical sample
ATE396497T1 (de) * 2000-01-21 2008-06-15 Hamamatsu Photonics Kk Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden
US6768539B2 (en) 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
KR100438787B1 (ko) * 2002-05-13 2004-07-05 삼성전자주식회사 박막 두께 측정 방법
JP2005005444A (ja) * 2003-06-11 2005-01-06 Nikon Corp アライメント装置、露光装置、アライメント方法、露光方法及び位置情報検出方法
JP5018004B2 (ja) * 2006-10-11 2012-09-05 株式会社ニコン 顕微鏡、マーク検出方法、ウェハ接合装置、および、積層３次元半導体装置の製造方法
US20080292177A1 (en) * 2007-05-23 2008-11-27 Sheets Ronald E System and Method for Providing Backside Alignment in a Lithographic Projection System
TW200938803A (en) 2008-03-07 2009-09-16 Univ Nat Formosa Device and method for testing thickness and gaps of transparent objects by means of dual optical probes
JP5406624B2 (ja) * 2009-08-10 2014-02-05 キヤノン株式会社 検出装置、露光装置及びデバイスの製造方法
JP2012195380A (ja) * 2011-03-15 2012-10-11 Nikon Corp マーク検出方法及び装置、並びに露光方法及び装置
JP6025346B2 (ja) * 2012-03-05 2016-11-16 キヤノン株式会社 検出装置、露光装置及びデバイスを製造する方法

Also Published As

Publication number Publication date
KR20140050562A (ko) 2014-04-29
JP6150490B2 (ja) 2017-06-21
US9400436B2 (en) 2016-07-26
JP2014085123A (ja) 2014-05-12
EP2722714A3 (en) 2015-06-17
EP2722714A2 (en) 2014-04-23
KR101672576B1 (ko) 2016-11-03
TW201416805A (zh) 2014-05-01
US20140111788A1 (en) 2014-04-24

Similar Documents

Publication Publication Date Title
TWI534558B (zh) 偵測裝置、曝光設備及使用其之裝置製造方法
CN103309169B (zh) 检测装置、曝光装置和制造器件的方法
KR101319136B1 (ko) 검출 장치, 노광 장치 및 디바이스 제조 방법
KR101642552B1 (ko) 계측 방법, 노광 방법 및 장치
KR100471524B1 (ko) 노광방법
US7528966B2 (en) Position detection apparatus and exposure apparatus
TW201107905A (en) Measurement apparatus, exposure apparatus, and device fabrication method
TWI487001B (zh) A surface position detecting device, a surface position detecting method, an exposure apparatus, and an element manufacturing method
TWI813492B (zh) 感測器裝置及用於微影量測之方法
TWI358529B (en) Shape measuring apparatus, shape measuring method,
JP6190168B2 (ja) 合焦方法、合焦装置、露光方法、およびデバイス製造方法
CN114647155A (zh) 测量装置、曝光装置和物品制造方法
US20100277710A1 (en) Exposure apparatus
JP6226525B2 (ja) 露光装置、露光方法、それらを用いたデバイスの製造方法
JP2012235065A (ja) 露光装置、および、デバイス製造方法
JP6061912B2 (ja) 計測方法、露光方法および装置
JP7446131B2 (ja) 検出装置、露光装置および物品製造方法
KR20220138803A (ko) 노광 장치, 노광 방법 및 물품의 제조 방법
JP2003100593A (ja) 微小間隙設定装置
WO1999005707A1 (en) Focusing method, exposure method, and aligner