KR101672576B1 - 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법 - Google Patents

검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법 Download PDF

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KR101672576B1
KR101672576B1 KR1020130124407A KR20130124407A KR101672576B1 KR 101672576 B1 KR101672576 B1 KR 101672576B1 KR 1020130124407 A KR1020130124407 A KR 1020130124407A KR 20130124407 A KR20130124407 A KR 20130124407A KR 101672576 B1 KR101672576 B1 KR 101672576B1
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South Korea
Prior art keywords
wafer
mark
focus position
thickness
detection system
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Korean (ko)
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KR20140050562A (ko
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히로노리 마에다
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0666—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using an exciting beam and a detection beam including surface acoustic waves [SAW]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020130124407A 2012-10-19 2013-10-18 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법 Active KR101672576B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012231653A JP6150490B2 (ja) 2012-10-19 2012-10-19 検出装置、露光装置、それを用いたデバイスの製造方法
JPJP-P-2012-231653 2012-10-19

Publications (2)

Publication Number Publication Date
KR20140050562A KR20140050562A (ko) 2014-04-29
KR101672576B1 true KR101672576B1 (ko) 2016-11-03

Family

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KR1020130124407A Active KR101672576B1 (ko) 2012-10-19 2013-10-18 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법

Country Status (5)

Country Link
US (1) US9400436B2 (enExample)
EP (1) EP2722714A3 (enExample)
JP (1) JP6150490B2 (enExample)
KR (1) KR101672576B1 (enExample)
TW (1) TWI534558B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN106247958A (zh) * 2016-07-11 2016-12-21 京东方科技集团股份有限公司 测量设备及测量方法
SG11201900623PA (en) 2016-08-30 2019-02-27 Asml Netherlands Bv Position sensor, lithographic apparatus and method for manufacturing devices
JP2019096757A (ja) * 2017-11-24 2019-06-20 東京エレクトロン株式会社 測定器のずれ量を求める方法、及び、処理システムにおける搬送位置データを較正する方法
EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
JP7129325B2 (ja) * 2018-12-14 2022-09-01 東京エレクトロン株式会社 搬送方法及び搬送システム
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
JP7446131B2 (ja) 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
US11640118B2 (en) * 2020-08-17 2023-05-02 Tokyo Electron Limited Method of pattern alignment for field stitching
WO2025234015A1 (ja) * 2024-05-08 2025-11-13 株式会社ニコン 位置検出方法、位置検出システム、及び露光装置

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US20030090671A1 (en) 2000-01-21 2003-05-15 Teruo Takahashi Thickness measuring apparatus, thickness measuring method, and wet etching apparatus and wet etching method utilizing them

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US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
US5671054A (en) * 1995-07-18 1997-09-23 Nikon Corporation Method and apparatus for measuring position of pattern formed on a substrate having a thickness
DE19733890C2 (de) * 1996-08-04 2000-03-16 Matsushita Electric Industrial Co Ltd Verfahren zum Vermessen eines Mediums und Vorrichtung dazu
US5744814A (en) * 1997-03-24 1998-04-28 Nec Corporation Method and apparatus for scanning exposure having thickness measurements of a film surface
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JP5018004B2 (ja) * 2006-10-11 2012-09-05 株式会社ニコン 顕微鏡、マーク検出方法、ウェハ接合装置、および、積層３次元半導体装置の製造方法
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Also Published As

Publication number Publication date
US20140111788A1 (en) 2014-04-24
EP2722714A2 (en) 2014-04-23
KR20140050562A (ko) 2014-04-29
TW201416805A (zh) 2014-05-01
JP6150490B2 (ja) 2017-06-21
JP2014085123A (ja) 2014-05-12
TWI534558B (zh) 2016-05-21
EP2722714A3 (en) 2015-06-17
US9400436B2 (en) 2016-07-26

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