JP2016524155A5 - - Google Patents

Download PDF

Info

Publication number
JP2016524155A5
JP2016524155A5 JP2016524217A JP2016524217A JP2016524155A5 JP 2016524155 A5 JP2016524155 A5 JP 2016524155A5 JP 2016524217 A JP2016524217 A JP 2016524217A JP 2016524217 A JP2016524217 A JP 2016524217A JP 2016524155 A5 JP2016524155 A5 JP 2016524155A5
Authority
JP
Japan
Prior art keywords
measurement
target structure
target
background
contrast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016524217A
Other languages
English (en)
Japanese (ja)
Other versions
JP6602755B2 (ja
JP2016524155A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/044440 external-priority patent/WO2014210381A1/en
Publication of JP2016524155A publication Critical patent/JP2016524155A/ja
Publication of JP2016524155A5 publication Critical patent/JP2016524155A5/ja
Application granted granted Critical
Publication of JP6602755B2 publication Critical patent/JP6602755B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016524217A 2013-06-27 2014-06-26 計測標的の偏光測定及び対応する標的設計 Active JP6602755B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361840339P 2013-06-27 2013-06-27
US61/840,339 2013-06-27
US201361916018P 2013-12-13 2013-12-13
US61/916,018 2013-12-13
PCT/US2014/044440 WO2014210381A1 (en) 2013-06-27 2014-06-26 Polarization measurements of metrology targets and corresponding target designs

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019186136A Division JP6875483B2 (ja) 2013-06-27 2019-10-09 計測標的の偏光測定及び対応する標的設計

Publications (3)

Publication Number Publication Date
JP2016524155A JP2016524155A (ja) 2016-08-12
JP2016524155A5 true JP2016524155A5 (enExample) 2017-08-03
JP6602755B2 JP6602755B2 (ja) 2019-11-06

Family

ID=52142695

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016524217A Active JP6602755B2 (ja) 2013-06-27 2014-06-26 計測標的の偏光測定及び対応する標的設計
JP2019186136A Active JP6875483B2 (ja) 2013-06-27 2019-10-09 計測標的の偏光測定及び対応する標的設計

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019186136A Active JP6875483B2 (ja) 2013-06-27 2019-10-09 計測標的の偏光測定及び対応する標的設計

Country Status (6)

Country Link
US (2) US10458777B2 (enExample)
JP (2) JP6602755B2 (enExample)
KR (2) KR102252341B1 (enExample)
CN (2) CN105408721B (enExample)
TW (1) TWI675998B (enExample)
WO (1) WO2014210381A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150087397A (ko) * 2012-11-21 2015-07-29 케이엘에이-텐코 코포레이션 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
US10228320B1 (en) 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
IL322724A (en) * 2014-08-29 2025-10-01 Asml Netherlands Bv Metrological method, purpose and basis
WO2017099843A1 (en) 2015-12-08 2017-06-15 Kla-Tencor Corporation Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination
WO2018063625A1 (en) 2016-09-28 2018-04-05 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10409948B1 (en) * 2017-09-29 2019-09-10 Cadence Design Systems, Inc. Topology preserving schematic transformations for RF net editing
US10837919B2 (en) 2017-11-06 2020-11-17 Kla Corporation Single cell scatterometry overlay targets
WO2021144066A1 (en) * 2020-01-16 2021-07-22 Asml Netherlands B.V. Substrate, patterning device and lithographic apparatuses
JP2025504941A (ja) * 2022-01-28 2025-02-19 ディー・ツー・エス・インコーポレイテッド レチクル強化技術のための方法及びシステム
KR102767520B1 (ko) * 2022-10-12 2025-02-14 (주)힉스컴퍼니 디지털 홀로그래픽 현미경을 제어하는 방법 및 장치
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
CN1163737C (zh) * 2000-03-07 2004-08-25 中国科学院长春光学精密机械与物理研究所 一种综合测量液晶器件参数的装置及方法
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7050162B2 (en) * 2002-01-16 2006-05-23 Therma-Wave, Inc. Optical metrology tool having improved contrast
JP3695398B2 (ja) * 2002-01-30 2005-09-14 富士ゼロックス株式会社 光学式エンコーダ及びエンコーダ用スケール
JP3967935B2 (ja) * 2002-02-25 2007-08-29 株式会社日立製作所 合わせ精度計測装置及びその方法
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
SG112969A1 (en) * 2003-12-22 2005-07-28 Asml Netherlands Bv Lithographic apparatus and methods for use thereof
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
KR100684872B1 (ko) * 2004-08-03 2007-02-20 삼성전자주식회사 빛의 편광을 공간적으로 제어하는 광학 시스템 및 이를제작하는 방법
CN1300564C (zh) * 2004-12-28 2007-02-14 天津大学 基于角度测量的原子力显微镜测量方法
US7556898B2 (en) 2005-09-01 2009-07-07 Infineon Technologies Ag Overlay target for polarized light lithography
DE102005046973B4 (de) * 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
KR101382020B1 (ko) * 2006-07-14 2014-04-04 가부시키가이샤 니콘 표면 검사 장치
EP2107668A1 (en) * 2007-01-22 2009-10-07 Tokyo University Of Science Educational Foundation Administrative Organization Rotating electric machine
JP4949073B2 (ja) * 2007-02-23 2012-06-06 株式会社 日立ディスプレイズ 液晶表示装置
US8004678B2 (en) * 2007-06-26 2011-08-23 Intel Corporation Wafer level alignment structures using subwavelength grating polarizers
US8161728B2 (en) * 2007-06-28 2012-04-24 United Technologies Corp. Gas turbines with multiple gas flow paths
SG153747A1 (en) * 2007-12-13 2009-07-29 Asml Netherlands Bv Alignment method, alignment system and product with alignment mark
US20090265148A1 (en) * 2008-04-16 2009-10-22 Synopsys, Inc. Modeling a sector-polarized-illumination source in an optical lithography system
JP5007979B2 (ja) * 2008-05-22 2012-08-22 独立行政法人産業技術総合研究所 欠陥を検査する方法及び欠陥検査装置
CN101513366B (zh) * 2009-03-18 2011-03-23 天津大学 基于ps-oct的三维可视化成像方法
NL2004897A (en) * 2009-06-25 2010-12-27 Asml Netherlands Bv Producing a marker pattern and measurement of an exposure-related property of an exposure apparatus.
TWI423166B (zh) * 2009-12-04 2014-01-11 Huper Lab Co Ltd 判斷輸入影像是否為霧化影像之方法、判斷輸入影像的霧級數之方法及霧化影像濾清方法
CN101915556B (zh) * 2010-07-09 2011-11-09 浙江大学 可用于低反射率光学球面面形检测的偏振点衍射干涉系统
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
WO2012062858A1 (en) * 2010-11-12 2012-05-18 Asml Netherlands B.V. Metrology method and apparatus, lithographic system and device manufacturing method
US8681413B2 (en) * 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
CN102332165B (zh) * 2011-09-15 2013-08-21 中国科学院长春光学精密机械与物理研究所 复杂背景下动目标或弱小目标的实时鲁棒跟踪装置
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US20140240705A1 (en) * 2013-02-27 2014-08-28 Kabushiki Kaisha Toshiba Semiconductor device, reticle method for checking position misalignment and method for manufacturing position misalignment checking mark
CN106164733B (zh) * 2014-03-31 2020-06-30 科磊股份有限公司 使用散射术计量的焦点测量

Similar Documents

Publication Publication Date Title
JP2016524155A5 (enExample)
JP6875483B2 (ja) 計測標的の偏光測定及び対応する標的設計
TWI752764B (zh) 用於疊對測量之形貌相位控制
JP6382624B2 (ja) 位相制御モデルに基づくオーバーレイ測定システム及び方法
JP2017527780A5 (enExample)
IL273041B2 (en) Meteorological method and device for determining a variable process pattern
IL273680B1 (en) Metrology system and method for determining a characteristic of one or more structures on a substrate
US10048595B2 (en) Process control using non-zero order diffraction
JP2018529952A5 (enExample)
JP2018515911A (ja) 計量システムにおける計量データのフィードフォワード
WO2018071063A1 (en) Diffraction-based focus metrology
JP2015527740A5 (enExample)
JP2014045908A5 (enExample)
WO2013139483A3 (en) Measuring system for measuring an imaging quality of an euv lens
JP2014132695A5 (enExample)
JP2013185832A5 (enExample)
JP2014085123A5 (enExample)
JP2017516075A5 (enExample)
JP2015049197A5 (enExample)
JP2016129212A5 (enExample)
JP2015197744A5 (enExample)
JP2016090444A5 (enExample)
JP2018105796A5 (enExample)
JP2014160780A5 (enExample)
CN106840608A (zh) 一种检测和评价光源平行性的方法