JP2018529952A5 - - Google Patents

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JP2018529952A5
JP2018529952A5 JP2018512605A JP2018512605A JP2018529952A5 JP 2018529952 A5 JP2018529952 A5 JP 2018529952A5 JP 2018512605 A JP2018512605 A JP 2018512605A JP 2018512605 A JP2018512605 A JP 2018512605A JP 2018529952 A5 JP2018529952 A5 JP 2018529952A5
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JP
Japan
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measurement
order diffraction
target
illumination
metrology
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JP2018512605A
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Japanese (ja)
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JP2018529952A (ja
JP6827466B2 (ja
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Priority claimed from PCT/US2016/047619 external-priority patent/WO2017044283A1/en
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JP2018512605A 2015-09-09 2016-08-18 補助電磁場の導入に基づく１次スキャトロメトリオーバーレイでの新たなアプローチ Active JP6827466B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562215895P 2015-09-09 2015-09-09
US62/215,895 2015-09-09
PCT/US2016/047619 WO2017044283A1 (en) 2015-09-09 2016-08-18 New approaches in first order scatterometry overlay based on introduction of auxiliary elecromagnetic fields

Publications (3)

Publication Number Publication Date
JP2018529952A JP2018529952A (ja) 2018-10-11
JP2018529952A5 true JP2018529952A5 (enExample) 2019-09-26
JP6827466B2 JP6827466B2 (ja) 2021-02-10

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JP2018512605A Active JP6827466B2 (ja) 2015-09-09 2016-08-18 補助電磁場の導入に基づく１次スキャトロメトリオーバーレイでの新たなアプローチ

Country Status (7)

Country Link
US (1) US10197389B2 (enExample)
EP (1) EP3347701B1 (enExample)
JP (1) JP6827466B2 (enExample)
KR (1) KR102407073B1 (enExample)
CN (1) CN108027320B (enExample)
TW (1) TWI656409B (enExample)
WO (1) WO2017044283A1 (enExample)

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US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
WO2019192865A1 (en) * 2018-04-06 2019-10-10 Asml Netherlands B.V. Inspection apparatus having non-linear optics
US10622238B2 (en) * 2018-06-07 2020-04-14 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
DE102018210315B4 (de) * 2018-06-25 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens
CN112567296B (zh) * 2018-08-28 2024-03-08 科磊股份有限公司 使用二衍射级成像的离轴照明覆盖测量
SG11202104681RA (en) 2018-11-21 2021-06-29 Kla Tencor Corp Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11119417B2 (en) 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
EP3879343A1 (en) * 2020-03-11 2021-09-15 ASML Netherlands B.V. Metrology measurement method and apparatus
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
WO2021250034A1 (en) * 2020-06-09 2021-12-16 Asml Netherlands B.V. A target for measuring a parameter of a lithographic process
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
US11841621B2 (en) 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12105431B2 (en) 2022-01-25 2024-10-01 Kla Corporation Annular apodizer for small target overlay measurement
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

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JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
US6710876B1 (en) * 2000-08-14 2004-03-23 Kla-Tencor Technologies Corporation Metrology system using optical phase
JP2002116314A (ja) * 2000-10-06 2002-04-19 Sankyo Seiki Mfg Co Ltd 回折素子および光ピックアップ装置
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20070002336A1 (en) * 2005-06-30 2007-01-04 Asml Netherlands B.V. Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method
US7467064B2 (en) * 2006-02-07 2008-12-16 Timbre Technologies, Inc. Transforming metrology data from a semiconductor treatment system using multivariate analysis
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
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