CN108027320B - 基于辅助电磁场的引入的一阶散射测量叠对的新方法 - Google Patents

基于辅助电磁场的引入的一阶散射测量叠对的新方法 Download PDF

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CN108027320B
CN108027320B CN201680051708.7A CN201680051708A CN108027320B CN 108027320 B CN108027320 B CN 108027320B CN 201680051708 A CN201680051708 A CN 201680051708A CN 108027320 B CN108027320 B CN 108027320B
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diffraction
order
target
illumination
metrology
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CN108027320A (zh
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V·莱温斯基
Y·帕斯卡维尔
Y·卢巴舍夫斯基
A·玛纳森
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/0201—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal phase variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
    • G01J3/4412—Scattering spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CN201680051708.7A 2015-09-09 2016-08-18 基于辅助电磁场的引入的一阶散射测量叠对的新方法 Active CN108027320B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562215895P 2015-09-09 2015-09-09
US62/215,895 2015-09-09
PCT/US2016/047619 WO2017044283A1 (en) 2015-09-09 2016-08-18 New approaches in first order scatterometry overlay based on introduction of auxiliary elecromagnetic fields

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CN108027320A CN108027320A (zh) 2018-05-11
CN108027320B true CN108027320B (zh) 2022-10-04

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Country Status (7)

Country Link
US (1) US10197389B2 (enExample)
EP (1) EP3347701B1 (enExample)
JP (1) JP6827466B2 (enExample)
KR (1) KR102407073B1 (enExample)
CN (1) CN108027320B (enExample)
TW (1) TWI656409B (enExample)
WO (1) WO2017044283A1 (enExample)

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US10767978B2 (en) * 2017-04-14 2020-09-08 Kla-Tencor Corporation Transmission small-angle X-ray scattering metrology system
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
KR102527672B1 (ko) * 2018-04-06 2023-04-28 에이에스엠엘 네델란즈 비.브이. 비선형 광학계를 갖는 검사 장치
WO2019236084A1 (en) * 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
DE102018210315B4 (de) * 2018-06-25 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens
KR102729956B1 (ko) * 2018-08-28 2024-11-13 케이엘에이 코포레이션 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정
CN113039407B (zh) * 2018-11-21 2024-11-15 科磊股份有限公司 单个单元灰度散射术重叠目标及其使用变化照明参数的测量
JP7431824B2 (ja) * 2018-11-21 2024-02-15 ケーエルエー コーポレイション スキャトロメトリオーバーレイ（ｓｃｏｌ）測定方法及びｓｃｏｌ測定システム
EP3879343A1 (en) * 2020-03-11 2021-09-15 ASML Netherlands B.V. Metrology measurement method and apparatus
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
WO2021250034A1 (en) * 2020-06-09 2021-12-16 Asml Netherlands B.V. A target for measuring a parameter of a lithographic process
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
US11841621B2 (en) 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12105431B2 (en) 2022-01-25 2024-10-01 Kla Corporation Annular apodizer for small target overlay measurement
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12032300B2 (en) * 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

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Also Published As

Publication number Publication date
JP6827466B2 (ja) 2021-02-10
KR20180039743A (ko) 2018-04-18
KR102407073B1 (ko) 2022-06-08
CN108027320A (zh) 2018-05-11
TW201710799A (zh) 2017-03-16
EP3347701A4 (en) 2019-04-10
EP3347701B1 (en) 2020-07-01
US10197389B2 (en) 2019-02-05
WO2017044283A1 (en) 2017-03-16
US20170268869A1 (en) 2017-09-21
EP3347701A1 (en) 2018-07-18
JP2018529952A (ja) 2018-10-11
TWI656409B (zh) 2019-04-11

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