JP6827466B2 - 補助電磁場の導入に基づく１次スキャトロメトリオーバーレイでの新たなアプローチ - Google Patents

補助電磁場の導入に基づく１次スキャトロメトリオーバーレイでの新たなアプローチ Download PDF

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JP6827466B2
JP6827466B2 JP2018512605A JP2018512605A JP6827466B2 JP 6827466 B2 JP6827466 B2 JP 6827466B2 JP 2018512605 A JP2018512605 A JP 2018512605A JP 2018512605 A JP2018512605 A JP 2018512605A JP 6827466 B2 JP6827466 B2 JP 6827466B2
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order
target
diffraction
measurement
illumination
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JP2018529952A (ja
JP2018529952A5 (enExample
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ウラジーミル レビンスキー
ウラジーミル レビンスキー
ユーリ パスコベール
ユーリ パスコベール
ユバル ルバシェフスキー
ユバル ルバシェフスキー
アムノン マナッセン
アムノン マナッセン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/0201—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal phase variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
    • G01J3/4412—Scattering spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2018512605A 2015-09-09 2016-08-18 補助電磁場の導入に基づく１次スキャトロメトリオーバーレイでの新たなアプローチ Active JP6827466B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562215895P 2015-09-09 2015-09-09
US62/215,895 2015-09-09
PCT/US2016/047619 WO2017044283A1 (en) 2015-09-09 2016-08-18 New approaches in first order scatterometry overlay based on introduction of auxiliary elecromagnetic fields

Publications (3)

Publication Number Publication Date
JP2018529952A JP2018529952A (ja) 2018-10-11
JP2018529952A5 JP2018529952A5 (enExample) 2019-09-26
JP6827466B2 true JP6827466B2 (ja) 2021-02-10

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Country Status (7)

Country Link
US (1) US10197389B2 (enExample)
EP (1) EP3347701B1 (enExample)
JP (1) JP6827466B2 (enExample)
KR (1) KR102407073B1 (enExample)
CN (1) CN108027320B (enExample)
TW (1) TWI656409B (enExample)
WO (1) WO2017044283A1 (enExample)

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US10767978B2 (en) * 2017-04-14 2020-09-08 Kla-Tencor Corporation Transmission small-angle X-ray scattering metrology system
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
WO2019192865A1 (en) * 2018-04-06 2019-10-10 Asml Netherlands B.V. Inspection apparatus having non-linear optics
US10622238B2 (en) * 2018-06-07 2020-04-14 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
DE102018210315B4 (de) * 2018-06-25 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens
CN112567296B (zh) * 2018-08-28 2024-03-08 科磊股份有限公司 使用二衍射级成像的离轴照明覆盖测量
SG11202104681RA (en) 2018-11-21 2021-06-29 Kla Tencor Corp Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11119417B2 (en) 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
EP3879343A1 (en) * 2020-03-11 2021-09-15 ASML Netherlands B.V. Metrology measurement method and apparatus
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
WO2021250034A1 (en) * 2020-06-09 2021-12-16 Asml Netherlands B.V. A target for measuring a parameter of a lithographic process
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
US11841621B2 (en) 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12105431B2 (en) 2022-01-25 2024-10-01 Kla Corporation Annular apodizer for small target overlay measurement
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

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JP2002116314A (ja) * 2000-10-06 2002-04-19 Sankyo Seiki Mfg Co Ltd 回折素子および光ピックアップ装置
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Publication number Publication date
TWI656409B (zh) 2019-04-11
US20170268869A1 (en) 2017-09-21
JP2018529952A (ja) 2018-10-11
KR20180039743A (ko) 2018-04-18
TW201710799A (zh) 2017-03-16
EP3347701A1 (en) 2018-07-18
CN108027320A (zh) 2018-05-11
EP3347701A4 (en) 2019-04-10
KR102407073B1 (ko) 2022-06-08
WO2017044283A1 (en) 2017-03-16
US10197389B2 (en) 2019-02-05
CN108027320B (zh) 2022-10-04
EP3347701B1 (en) 2020-07-01

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