KR102407073B1 - 보조 전자기장의 도입에 기초한 1차 스캐터로메트리 오버레이의 새로운 접근법 - Google Patents

보조 전자기장의 도입에 기초한 1차 스캐터로메트리 오버레이의 새로운 접근법 Download PDF

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KR102407073B1
KR102407073B1 KR1020187009582A KR20187009582A KR102407073B1 KR 102407073 B1 KR102407073 B1 KR 102407073B1 KR 1020187009582 A KR1020187009582 A KR 1020187009582A KR 20187009582 A KR20187009582 A KR 20187009582A KR 102407073 B1 KR102407073 B1 KR 102407073B1
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diffraction
target
illumination
order
signal
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KR20180039743A (ko
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블라디미르 레빈스키
유리 파스코버
유발 루바셰브스키
암논 마나센
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/0201—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal phase variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
    • G01J3/4412—Scattering spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020187009582A 2015-09-09 2016-08-18 보조 전자기장의 도입에 기초한 1차 스캐터로메트리 오버레이의 새로운 접근법 Active KR102407073B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562215895P 2015-09-09 2015-09-09
US62/215,895 2015-09-09
PCT/US2016/047619 WO2017044283A1 (en) 2015-09-09 2016-08-18 New approaches in first order scatterometry overlay based on introduction of auxiliary elecromagnetic fields

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KR20180039743A KR20180039743A (ko) 2018-04-18
KR102407073B1 true KR102407073B1 (ko) 2022-06-08

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US (1) US10197389B2 (enExample)
EP (1) EP3347701B1 (enExample)
JP (1) JP6827466B2 (enExample)
KR (1) KR102407073B1 (enExample)
CN (1) CN108027320B (enExample)
TW (1) TWI656409B (enExample)
WO (1) WO2017044283A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10983005B2 (en) * 2016-12-15 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Spectroscopic overlay metrology
US10444161B2 (en) * 2017-04-05 2019-10-15 Kla-Tencor Corporation Systems and methods for metrology with layer-specific illumination spectra
US10767978B2 (en) * 2017-04-14 2020-09-08 Kla-Tencor Corporation Transmission small-angle X-ray scattering metrology system
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
KR102527672B1 (ko) * 2018-04-06 2023-04-28 에이에스엠엘 네델란즈 비.브이. 비선형 광학계를 갖는 검사 장치
WO2019236084A1 (en) * 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
DE102018210315B4 (de) * 2018-06-25 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens
KR102729956B1 (ko) * 2018-08-28 2024-11-13 케이엘에이 코포레이션 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정
CN113039407B (zh) * 2018-11-21 2024-11-15 科磊股份有限公司 单个单元灰度散射术重叠目标及其使用变化照明参数的测量
JP7431824B2 (ja) * 2018-11-21 2024-02-15 ケーエルエー コーポレイション スキャトロメトリオーバーレイ（ｓｃｏｌ）測定方法及びｓｃｏｌ測定システム
EP3879343A1 (en) * 2020-03-11 2021-09-15 ASML Netherlands B.V. Metrology measurement method and apparatus
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
WO2021250034A1 (en) * 2020-06-09 2021-12-16 Asml Netherlands B.V. A target for measuring a parameter of a lithographic process
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
US11841621B2 (en) 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12105431B2 (en) 2022-01-25 2024-10-01 Kla Corporation Annular apodizer for small target overlay measurement
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12032300B2 (en) * 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007010666A (ja) 2005-06-30 2007-01-18 Asml Netherlands Bv 計測装置、リソグラフィ装置、プロセス装置、計測方法、及びデバイス製造方法。
JP2010192894A (ja) 2009-02-11 2010-09-02 Asml Netherlands Bv 検査装置、リソグラフィ装置、リソグラフィプロセシングセルおよび検査方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
US6710876B1 (en) * 2000-08-14 2004-03-23 Kla-Tencor Technologies Corporation Metrology system using optical phase
JP2002116314A (ja) * 2000-10-06 2002-04-19 Sankyo Seiki Mfg Co Ltd 回折素子および光ピックアップ装置
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7467064B2 (en) * 2006-02-07 2008-12-16 Timbre Technologies, Inc. Transforming metrology data from a semiconductor treatment system using multivariate analysis
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US9188875B2 (en) * 2008-12-16 2015-11-17 Asml Netherlands B.V. Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell
NL2007127A (en) * 2010-08-06 2012-02-07 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus and lithographic processing cell.
KR102102007B1 (ko) * 2012-06-26 2020-04-20 케이엘에이 코포레이션 근접장 계측
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
KR101855243B1 (ko) * 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
KR101948912B1 (ko) * 2014-07-09 2019-02-15 에이에스엠엘 네델란즈 비.브이. 검사 장치, 검사 방법 및 디바이스 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007010666A (ja) 2005-06-30 2007-01-18 Asml Netherlands Bv 計測装置、リソグラフィ装置、プロセス装置、計測方法、及びデバイス製造方法。
JP2010192894A (ja) 2009-02-11 2010-09-02 Asml Netherlands Bv 検査装置、リソグラフィ装置、リソグラフィプロセシングセルおよび検査方法

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JP6827466B2 (ja) 2021-02-10
KR20180039743A (ko) 2018-04-18
CN108027320A (zh) 2018-05-11
CN108027320B (zh) 2022-10-04
TW201710799A (zh) 2017-03-16
EP3347701A4 (en) 2019-04-10
EP3347701B1 (en) 2020-07-01
US10197389B2 (en) 2019-02-05
WO2017044283A1 (en) 2017-03-16
US20170268869A1 (en) 2017-09-21
EP3347701A1 (en) 2018-07-18
JP2018529952A (ja) 2018-10-11
TWI656409B (zh) 2019-04-11

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