JP7250063B2 - 光学システム - Google Patents
光学システム Download PDFInfo
- Publication number
- JP7250063B2 JP7250063B2 JP2021077244A JP2021077244A JP7250063B2 JP 7250063 B2 JP7250063 B2 JP 7250063B2 JP 2021077244 A JP2021077244 A JP 2021077244A JP 2021077244 A JP2021077244 A JP 2021077244A JP 7250063 B2 JP7250063 B2 JP 7250063B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- phase
- path
- splitting element
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/32—Fiducial marks and measuring scales within the optical system
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
- G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N2021/653—Coherent methods [CARS]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Theoretical Computer Science (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Microscoopes, Condenser (AREA)
Description
本願は、2015年5月19日付米国暫定特許出願第62/163783号並びに2015年9月23日付米国暫定特許出願第62/222724号に基づく利益を主張する出願であるので、この参照を以てその全容を本願に繰り入れることにする。
Claims (6)
- イメージング計量ツール内の光学システムであって、
第1のビーム分岐素子と、
第1の照明経路に沿って前記第1のビーム分岐素子に光を投射する照明源と、
前記第1の照明経路に配置された集光レンズと、
光をイメージング計量ターゲットに向ける対物レンズと、
前記第1のビーム分岐素子と前記対物レンズとの間の光の経路に設けられた第2のビーム分岐素子と、
前記第2のビーム分岐素子に光を投射し、前記第2のビーム分岐素子を介して前記対物レンズに接続される第2の照明経路と、
前記第2のビーム分岐素子及び前記対物レンズに対し前記第1のビーム分岐素子の反対側に位置する集光路と、
前記集光路に統合された参照信号を有する可調参照路と、
を備え、
前記可調参照路は、前記参照信号の調整可能な位相を提供するように構成され、
前記光学システムは、前記参照信号の位相を調節して、前記イメージング計量ターゲットのトポグラフィック位相がπの整数倍になるように修正するとともに、少なくとも2つのターゲット層から0次及び1次の回折信号のみを収集するように構成され、
前記可調参照路が、前記第2のビーム分岐素子から直接光を受け、
前記可調参照路に減衰器が配置され、該減衰器は前記参照信号の調整可能な位相を制御するように構成され、
前記イメージング計量ターゲットは周期的構造を有し、前記トポグラフィック位相は0次および1次回折の位相の差である、
光学システム。 - 請求項1に記載の光学システムであって、前記可調参照路が、前記光学システムの対物系と同一の参照対物系と可調ミラーとを有するリニック干渉計を備える光学システム。
- 請求項1に記載の光学システムであって、前記参照信号の振幅を制御するように構成された中性濃度フィルタと、前記参照信号の位相を調整可能な可調ミラーの少なくともいずれかをさらに備える、光学システム。
- イメージング計量ツール内の光学システムであって、
第1のビーム分岐素子と、
第1の照明経路に沿って前記第1のビーム分岐素子に光を投射する照明源と、
前記第1の照明経路に配置された集光レンズと、
光をイメージング計量ターゲットに向ける対物レンズと、
前記第1のビーム分岐素子と前記対物レンズとの間の光の経路に設けられた第2のビーム分岐素子と、
前記第2のビーム分岐素子に光を投射し、前記第2のビーム分岐素子を介して前記対物レンズに接続される第2の照明経路と、
前記第2のビーム分岐素子及び前記対物レンズに対し前記第1のビーム分岐素子の反対側に位置する集光路と、
制御可能な振幅及び位相を有する参照信号を有する可調参照路と、
を備え、
前記可調参照路は、前記参照信号の調整可能な位相を提供するように構成され、
前記振幅及び位相が、少なくとも2個のターゲット層からの0次回折信号と1次回折信号との間のトポグラフィック位相を最小化するように構成され、
前記可調参照路が、前記第2のビーム分岐素子から直接光を受け、
前記可調参照路に減衰器が配置され、該減衰器は前記参照信号の調整可能な位相を制御するように構成され、
前記イメージング計量ターゲットは周期的構造を有する、
光学システム。 - 請求項4に記載の光学システムであって、前記可調参照路がリニック干渉計型の構成で前記光学システムに組み込まれている光学システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562163783P | 2015-05-19 | 2015-05-19 | |
US62/163,783 | 2015-05-19 | ||
US201562222724P | 2015-09-23 | 2015-09-23 | |
US62/222,724 | 2015-09-23 | ||
JP2017560538A JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560538A Division JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021128169A JP2021128169A (ja) | 2021-09-02 |
JP7250063B2 true JP7250063B2 (ja) | 2023-03-31 |
Family
ID=57320785
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560538A Active JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
JP2021077244A Active JP7250063B2 (ja) | 2015-05-19 | 2021-04-30 | 光学システム |
JP2021077243A Active JP7253006B2 (ja) | 2015-05-19 | 2021-04-30 | 光学システム |
JP2021077245A Active JP7250064B2 (ja) | 2015-05-19 | 2021-04-30 | イメージング計量ターゲットおよび計量方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560538A Active JP6879939B2 (ja) | 2015-05-19 | 2016-05-19 | オーバレイ計測用トポグラフィック位相制御 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021077243A Active JP7253006B2 (ja) | 2015-05-19 | 2021-04-30 | 光学システム |
JP2021077245A Active JP7250064B2 (ja) | 2015-05-19 | 2021-04-30 | イメージング計量ターゲットおよび計量方法 |
Country Status (7)
Country | Link |
---|---|
US (5) | US10520832B2 (ja) |
JP (4) | JP6879939B2 (ja) |
KR (4) | KR102665579B1 (ja) |
CN (4) | CN112859542A (ja) |
SG (3) | SG10201912816UA (ja) |
TW (4) | TWI752764B (ja) |
WO (1) | WO2016187468A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102665579B1 (ko) | 2015-05-19 | 2024-05-10 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
US9989806B2 (en) * | 2015-09-10 | 2018-06-05 | Samsung Display Co., Ltd. | Color conversion panel and display device including the same |
EP3387371B1 (en) * | 2015-12-08 | 2023-04-19 | KLA-Tencor Corporation | Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination |
KR102495480B1 (ko) * | 2017-02-10 | 2023-02-02 | 케이엘에이 코포레이션 | 산란계측 측정들에서의 격자 비대칭성들에 관련된 부정확성들의 완화 |
CN110741374B (zh) * | 2017-06-06 | 2024-06-11 | 科磊股份有限公司 | 光罩优化算法及最优目标设计 |
EP3454123A1 (en) * | 2017-09-06 | 2019-03-13 | ASML Netherlands B.V. | Metrology method and apparatus |
EP3499312A1 (en) * | 2017-12-15 | 2019-06-19 | ASML Netherlands B.V. | Metrology apparatus and a method of determining a characteristic of interest |
KR20240037383A (ko) | 2017-11-07 | 2024-03-21 | 에이에스엠엘 네델란즈 비.브이. | 관심 특성을 결정하는 계측 장치 및 방법 |
US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
EP3521929A1 (en) | 2018-02-02 | 2019-08-07 | ASML Netherlands B.V. | Method of determining an optimal focus height for a metrology apparatus |
KR102544707B1 (ko) | 2018-02-27 | 2023-06-16 | 에이에스엠엘 네델란즈 비.브이. | 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 장치 및 방법 |
JP7177847B2 (ja) * | 2018-03-19 | 2022-11-24 | ケーエルエー コーポレイション | 複数波長を用いたオーバーレイ測定 |
US10677588B2 (en) * | 2018-04-09 | 2020-06-09 | Kla-Tencor Corporation | Localized telecentricity and focus optimization for overlay metrology |
US10622238B2 (en) * | 2018-06-07 | 2020-04-14 | Kla-Tencor Corporation | Overlay measurement using phase and amplitude modeling |
KR20210038983A (ko) * | 2018-08-28 | 2021-04-08 | 케이엘에이 코포레이션 | 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정 |
US20220074875A1 (en) * | 2018-12-31 | 2022-03-10 | Asml Netherlands B.V. | Method for overlay metrology and apparatus thereof |
EP3970184A4 (en) | 2019-02-14 | 2023-02-15 | KLA Corporation | METHOD FOR MEASUREMENT OF MISALIGNMENT IN TOPOGRAPHIC SEMICONDUCTOR DEVICE WAFER FABRICATION |
US11703460B2 (en) * | 2019-07-09 | 2023-07-18 | Kla Corporation | Methods and systems for optical surface defect material characterization |
US11914290B2 (en) | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
US11346657B2 (en) * | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
KR20210156894A (ko) * | 2020-06-18 | 2021-12-28 | 삼성전자주식회사 | 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치 |
CN113467033A (zh) * | 2021-06-24 | 2021-10-01 | 南昌欧菲光电技术有限公司 | 一种摄像头模组及其透镜的定位方法 |
CN113777731A (zh) * | 2021-08-11 | 2021-12-10 | 中国工程物理研究院应用电子学研究所 | 一种共轴反转环型连续变密度衰减器装置及其工作方法 |
CN113985711B (zh) * | 2021-10-28 | 2024-02-02 | 无锡卓海科技股份有限公司 | 一种套刻测量装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006509219A (ja) | 2002-12-05 | 2006-03-16 | ケーエルエー−テンカー テクノロジィース コーポレイション | 散乱計測を用いてオーバレイ誤差を検出する装置および方法 |
JP2013534314A (ja) | 2010-08-03 | 2013-09-02 | ケーエルエー−テンカー コーポレイション | 多層オーバーレイ計測ターゲットおよび相補的オーバーレイ計測測定システム |
US20140111791A1 (en) | 2012-10-19 | 2014-04-24 | Kla-Tencor Corporation | Phase characterization of targets |
JP2014527633A (ja) | 2011-08-15 | 2014-10-16 | ケーエルエー−テンカー コーポレイション | 瞳位相解析によるオーバレイ計測 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4644172A (en) * | 1984-02-22 | 1987-02-17 | Kla Instruments Corporation | Electronic control of an automatic wafer inspection system |
US5666197A (en) * | 1996-08-21 | 1997-09-09 | Polaroid Corporation | Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography |
JPH10284370A (ja) * | 1997-04-03 | 1998-10-23 | Nikon Corp | 焦点位置検出装置及び該装置を備えた投影露光装置 |
JP2001307975A (ja) * | 2000-02-18 | 2001-11-02 | Nikon Corp | 荷電粒子線露光装置及び半導体デバイスの製造方法 |
US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
JP2002170760A (ja) * | 2000-12-01 | 2002-06-14 | Nikon Corp | 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法 |
US7072502B2 (en) | 2001-06-07 | 2006-07-04 | Applied Materials, Inc. | Alternating phase-shift mask inspection method and apparatus |
US6794671B2 (en) * | 2002-07-17 | 2004-09-21 | Particle Sizing Systems, Inc. | Sensors and methods for high-sensitivity optical particle counting and sizing |
US7230704B2 (en) | 2003-06-06 | 2007-06-12 | Tokyo Electron Limited | Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay |
JP4734261B2 (ja) * | 2004-02-18 | 2011-07-27 | ケーエルエー−テンカー コーポレイション | 連続変化するオフセットマークと、オーバレイ決定方法 |
DE102005006724A1 (de) * | 2004-10-20 | 2006-08-10 | Universität Stuttgart | Verfahren und Anordung zur konfokalen Spektral-Interferometrie, insbesondere auch zur optischen Kohärenz-Tomografie (OCT)und/oder optischen Kohärenz-Mikroskopie (OCM)von biologischen und technischen Objekten |
US20060164649A1 (en) * | 2005-01-24 | 2006-07-27 | Eliezer Rosengaus | Multi-spectral techniques for defocus detection |
DE102006016131A1 (de) * | 2005-09-22 | 2007-03-29 | Robert Bosch Gmbh | Interferometrische Messvorrichtung |
JP2007140212A (ja) * | 2005-11-18 | 2007-06-07 | Toshiba Corp | フォトマスク及び半導体装置の製造方法 |
US20070238955A1 (en) * | 2006-01-18 | 2007-10-11 | The General Hospital Corporation | Systems and methods for generating data using one or more endoscopic microscopy techniques |
US7408642B1 (en) * | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
DE102006021557B3 (de) * | 2006-05-08 | 2007-07-12 | Carl Mahr Holding Gmbh | Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik |
US7528941B2 (en) * | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
WO2008132799A1 (ja) * | 2007-04-12 | 2008-11-06 | Nikon Corporation | 計測方法、露光方法及びデバイス製造方法 |
JP4966724B2 (ja) * | 2007-04-20 | 2012-07-04 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7602491B2 (en) * | 2007-04-26 | 2009-10-13 | Kla- Tencor Corporation | Optical gain approach for enhancement of overlay and alignment systems performance |
US7869022B2 (en) * | 2007-07-18 | 2011-01-11 | Asml Netherlands B.V. | Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system |
US20090034071A1 (en) * | 2007-07-31 | 2009-02-05 | Dean Jennings | Method for partitioning and incoherently summing a coherent beam |
US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
US9239455B2 (en) * | 2007-12-31 | 2016-01-19 | Stc.Unm | Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy |
NL1036857A1 (nl) | 2008-04-21 | 2009-10-22 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
JP5351272B2 (ja) * | 2008-09-22 | 2013-11-27 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及びデバイス製造方法 |
JP5361322B2 (ja) * | 2008-10-14 | 2013-12-04 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
DE102009044151B4 (de) * | 2009-05-19 | 2012-03-29 | Kla-Tencor Mie Gmbh | Vorrichtung zur optischen Waferinspektion |
NL2005162A (en) * | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
CN101699265A (zh) * | 2009-10-28 | 2010-04-28 | 上海理工大学 | 动态偏振光散射颗粒测量装置及测量方法 |
US8896832B2 (en) * | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
JP6008851B2 (ja) | 2010-07-19 | 2016-10-19 | エーエスエムエル ネザーランズ ビー.ブイ. | オーバレイ誤差を決定する方法及び装置 |
US9007584B2 (en) * | 2010-12-27 | 2015-04-14 | Nanometrics Incorporated | Simultaneous measurement of multiple overlay errors using diffraction based overlay |
KR101976152B1 (ko) * | 2011-02-10 | 2019-05-09 | 케이엘에이-텐코 코포레이션 | 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명 |
US20120224183A1 (en) * | 2011-03-02 | 2012-09-06 | Zygo Corporation | Interferometric metrology of surfaces, films and underresolved structures |
JP5731063B2 (ja) * | 2011-04-08 | 2015-06-10 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、プログラマブル・パターニングデバイス、及びリソグラフィ方法 |
EP2841875A4 (en) * | 2012-04-23 | 2016-01-20 | Univ Ben Gurion | HIGH-RESOLUTION OPTICAL FULL-FIELD COHERENCE TOMOGRAPHY WITH GENUINE SPECTROSCOPIC DOUBLE MODE USING LIQUID CRYSTAL DEVICES |
US8913237B2 (en) * | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
KR102231730B1 (ko) | 2012-06-26 | 2021-03-24 | 케이엘에이 코포레이션 | 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거 |
US9329033B2 (en) | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
US9875946B2 (en) * | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
JP6346296B2 (ja) * | 2014-02-03 | 2018-06-20 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジー方法及び装置、基板、リソグラフィシステム並びにデバイス製造方法 |
CN106030414B (zh) * | 2014-02-21 | 2018-10-09 | Asml荷兰有限公司 | 目标布置的优化和相关的目标 |
KR102345196B1 (ko) * | 2014-04-07 | 2021-12-29 | 노바 메주어링 인스트루먼츠 엘티디. | 광학 위상 측정 방법 및 시스템 |
US20150355098A1 (en) * | 2014-05-06 | 2015-12-10 | California Institute Of Technology | Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals |
WO2016086056A1 (en) | 2014-11-25 | 2016-06-02 | Kla-Tencor Corporation | Analyzing and utilizing landscapes |
KR102665579B1 (ko) * | 2015-05-19 | 2024-05-10 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
-
2016
- 2016-05-19 KR KR1020217038903A patent/KR102665579B1/ko active IP Right Grant
- 2016-05-19 KR KR1020217038906A patent/KR102678955B1/ko active IP Right Grant
- 2016-05-19 CN CN202110100983.6A patent/CN112859542A/zh active Pending
- 2016-05-19 SG SG10201912816UA patent/SG10201912816UA/en unknown
- 2016-05-19 TW TW109145523A patent/TWI752764B/zh active
- 2016-05-19 US US15/114,175 patent/US10520832B2/en active Active
- 2016-05-19 CN CN202110100981.7A patent/CN112859541A/zh active Pending
- 2016-05-19 TW TW105115575A patent/TWI715582B/zh active
- 2016-05-19 TW TW109145525A patent/TWI760984B/zh active
- 2016-05-19 KR KR1020177036236A patent/KR102334168B1/ko active IP Right Grant
- 2016-05-19 TW TW109145524A patent/TWI755987B/zh active
- 2016-05-19 CN CN202110100880.XA patent/CN112859540A/zh active Pending
- 2016-05-19 SG SG10201912818WA patent/SG10201912818WA/en unknown
- 2016-05-19 JP JP2017560538A patent/JP6879939B2/ja active Active
- 2016-05-19 SG SG10201912822UA patent/SG10201912822UA/en unknown
- 2016-05-19 CN CN201680028226.XA patent/CN107636538B/zh active Active
- 2016-05-19 KR KR1020217038910A patent/KR102607646B1/ko active IP Right Grant
- 2016-05-19 WO PCT/US2016/033353 patent/WO2016187468A1/en active Application Filing
-
2019
- 2019-11-03 US US16/672,480 patent/US20200142322A1/en not_active Abandoned
- 2019-11-03 US US16/672,483 patent/US11314173B2/en active Active
- 2019-11-03 US US16/672,475 patent/US20200142321A1/en not_active Abandoned
-
2021
- 2021-04-26 US US17/241,006 patent/US20210255551A1/en not_active Abandoned
- 2021-04-30 JP JP2021077244A patent/JP7250063B2/ja active Active
- 2021-04-30 JP JP2021077243A patent/JP7253006B2/ja active Active
- 2021-04-30 JP JP2021077245A patent/JP7250064B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006509219A (ja) | 2002-12-05 | 2006-03-16 | ケーエルエー−テンカー テクノロジィース コーポレイション | 散乱計測を用いてオーバレイ誤差を検出する装置および方法 |
JP2013534314A (ja) | 2010-08-03 | 2013-09-02 | ケーエルエー−テンカー コーポレイション | 多層オーバーレイ計測ターゲットおよび相補的オーバーレイ計測測定システム |
JP2014527633A (ja) | 2011-08-15 | 2014-10-16 | ケーエルエー−テンカー コーポレイション | 瞳位相解析によるオーバレイ計測 |
US20140111791A1 (en) | 2012-10-19 | 2014-04-24 | Kla-Tencor Corporation | Phase characterization of targets |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7250063B2 (ja) | 光学システム | |
NL2013244B1 (en) | Phase-controlled model-based overlay measurement systems and methods. | |
KR20200096843A (ko) | 타겟 측정 방법, 및 계측 장치 | |
KR20030095331A (ko) | 리소그래피장치, 디바이스제조방법 및 이에 따라 제조된디바이스 | |
KR102328438B1 (ko) | 계측 장치 | |
JP2020518848A (ja) | メトロロジパラメータ決定及びメトロロジレシピ選択 | |
US10622238B2 (en) | Overlay measurement using phase and amplitude modeling | |
TWI792653B (zh) | 暗場數位全像顯微鏡及相關度量衡方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210518 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220705 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230314 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230320 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7250063 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |