JP6122426B2 - 下層組成物及びそれの方法 - Google Patents
下層組成物及びそれの方法 Download PDFInfo
- Publication number
- JP6122426B2 JP6122426B2 JP2014516452A JP2014516452A JP6122426B2 JP 6122426 B2 JP6122426 B2 JP 6122426B2 JP 2014516452 A JP2014516452 A JP 2014516452A JP 2014516452 A JP2014516452 A JP 2014516452A JP 6122426 B2 JP6122426 B2 JP 6122426B2
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- JP
- Japan
- Prior art keywords
- group
- polymer
- composition
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C08L101/06—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0091—Complexes with metal-heteroatom-bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L37/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/164,869 US8568958B2 (en) | 2011-06-21 | 2011-06-21 | Underlayer composition and process thereof |
| US13/164,869 | 2011-06-21 | ||
| PCT/IB2012/001219 WO2012176043A1 (en) | 2011-06-21 | 2012-06-18 | An underlayer composition and process thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014526060A JP2014526060A (ja) | 2014-10-02 |
| JP2014526060A5 JP2014526060A5 (enExample) | 2015-09-24 |
| JP6122426B2 true JP6122426B2 (ja) | 2017-04-26 |
Family
ID=46465239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014516452A Active JP6122426B2 (ja) | 2011-06-21 | 2012-06-18 | 下層組成物及びそれの方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8568958B2 (enExample) |
| EP (1) | EP2723809B1 (enExample) |
| JP (1) | JP6122426B2 (enExample) |
| KR (1) | KR101824763B1 (enExample) |
| CN (1) | CN103582665B (enExample) |
| SG (1) | SG194106A1 (enExample) |
| TW (1) | TWI560523B (enExample) |
| WO (1) | WO2012176043A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5889568B2 (ja) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法 |
| US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
| US9201305B2 (en) * | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
| US9296922B2 (en) | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
| US9418836B2 (en) * | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
| US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
| EP3122792B1 (en) * | 2014-03-28 | 2018-10-17 | Versalis S.P.A. | Vinyl polymers having a flame-retardant function |
| JP2015199916A (ja) * | 2014-04-02 | 2015-11-12 | Jsr株式会社 | 膜形成用組成物及びパターン形成方法 |
| US9499698B2 (en) * | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
| US9957339B2 (en) * | 2015-08-07 | 2018-05-01 | Rohm And Haas Electronic Materials Llc | Copolymer and associated layered article, and device-forming method |
| US9929012B1 (en) | 2016-12-14 | 2018-03-27 | International Business Machines Corporation | Resist having tuned interface hardmask layer for EUV exposure |
| TWI737872B (zh) | 2016-12-21 | 2021-09-01 | 德商馬克專利公司 | 用於嵌段共聚物之自組裝之新穎組合物及方法 |
| KR102456279B1 (ko) | 2017-03-16 | 2022-10-18 | 메르크 파텐트 게엠베하 | 리소그래피 조성물 및 이의 사용 방법 |
| KR102399362B1 (ko) | 2017-09-06 | 2022-05-18 | 메르크 파텐트 게엠베하 | 하드 마스크로서 유용한 스핀-온 무기 산화물 함유 조성물 및 개선된 열적 안정성을 지닌 충전 재료 |
| US10998191B2 (en) | 2018-11-13 | 2021-05-04 | International Business Machines Corporation | Graded hardmask interlayer for enhanced extreme ultraviolet performance |
| JP7550211B2 (ja) | 2019-07-08 | 2024-09-12 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用 |
| DE102019134535B4 (de) * | 2019-08-05 | 2023-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materialien für unteren antireflexbelag |
| JP2025113918A (ja) * | 2024-01-23 | 2025-08-04 | 信越化学工業株式会社 | 金属含有膜形成用組成物、パターン形成方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3474054A (en) | 1966-09-13 | 1969-10-21 | Permalac Corp The | Surface coating compositions containing pyridine salts or aromatic sulfonic acids |
| US4200729A (en) | 1978-05-22 | 1980-04-29 | King Industries, Inc | Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4251665A (en) | 1978-05-22 | 1981-02-17 | King Industries, Inc. | Aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| DE69125634T2 (de) | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
| US5187019A (en) | 1991-09-06 | 1993-02-16 | King Industries, Inc. | Latent catalysts |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US6808859B1 (en) | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
| US5879859A (en) * | 1997-07-16 | 1999-03-09 | International Business Machines Corporation | Strippable photoimageable compositions |
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
| US6348299B1 (en) * | 1999-07-12 | 2002-02-19 | International Business Machines Corporation | RIE etch resistant nonchemically amplified resist composition and use thereof |
| JP2001058472A (ja) * | 1999-08-20 | 2001-03-06 | Fuji Photo Film Co Ltd | 平版印刷版原版 |
| WO2001098834A1 (en) | 2000-06-21 | 2001-12-27 | Asahi Glass Company, Limited | Resist composition |
| US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
| KR100776551B1 (ko) | 2001-02-09 | 2007-11-16 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
| US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
| US6740469B2 (en) * | 2002-06-25 | 2004-05-25 | Brewer Science Inc. | Developer-soluble metal alkoxide coatings for microelectronic applications |
| US6872506B2 (en) * | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
| US20040171743A1 (en) | 2003-01-21 | 2004-09-02 | Terry Brewer, Ph.D. | Hybrid organic-inorganic polymer coatings with high refractive indices |
| EP1493761A1 (en) * | 2003-07-02 | 2005-01-05 | 3M Innovative Properties Company | Fluoropolymer of fluorinated short chain acrylates or methacrylates and oil- and water repellent compositions based thereon |
| JP4553835B2 (ja) | 2005-12-14 | 2010-09-29 | 信越化学工業株式会社 | 反射防止膜材料、及びこれを用いたパターン形成方法、基板 |
| US8168372B2 (en) * | 2006-09-25 | 2012-05-01 | Brewer Science Inc. | Method of creating photolithographic structures with developer-trimmed hard mask |
| US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| JP4809378B2 (ja) * | 2007-03-13 | 2011-11-09 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
| CN101796146B (zh) * | 2007-09-07 | 2013-09-04 | 3M创新有限公司 | 包含经表面改性的高折射率纳米粒子的自组装抗反射涂层 |
| US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
| JP5101541B2 (ja) * | 2008-05-15 | 2012-12-19 | 信越化学工業株式会社 | パターン形成方法 |
| JP5503916B2 (ja) * | 2008-08-04 | 2014-05-28 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
| US8772376B2 (en) * | 2009-08-18 | 2014-07-08 | International Business Machines Corporation | Near-infrared absorbing film compositions |
| JP5939399B2 (ja) * | 2010-10-22 | 2016-06-22 | 日産化学工業株式会社 | フッ素系添加剤を有するシリコン含有レジスト下層膜形成組成物 |
-
2011
- 2011-06-21 US US13/164,869 patent/US8568958B2/en not_active Expired - Fee Related
-
2012
- 2012-06-18 EP EP12732870.6A patent/EP2723809B1/en active Active
- 2012-06-18 CN CN201280026263.9A patent/CN103582665B/zh active Active
- 2012-06-18 JP JP2014516452A patent/JP6122426B2/ja active Active
- 2012-06-18 WO PCT/IB2012/001219 patent/WO2012176043A1/en not_active Ceased
- 2012-06-18 SG SG2013074646A patent/SG194106A1/en unknown
- 2012-06-18 KR KR1020137032152A patent/KR101824763B1/ko active Active
- 2012-06-21 TW TW101122288A patent/TWI560523B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2723809B1 (en) | 2020-01-08 |
| EP2723809A1 (en) | 2014-04-30 |
| KR101824763B1 (ko) | 2018-02-02 |
| SG194106A1 (en) | 2013-11-29 |
| US8568958B2 (en) | 2013-10-29 |
| KR20140056178A (ko) | 2014-05-09 |
| WO2012176043A1 (en) | 2012-12-27 |
| TW201312281A (zh) | 2013-03-16 |
| CN103582665A (zh) | 2014-02-12 |
| TWI560523B (en) | 2016-12-01 |
| CN103582665B (zh) | 2015-07-08 |
| JP2014526060A (ja) | 2014-10-02 |
| US20120328990A1 (en) | 2012-12-27 |
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