JP6122426B2 - 下層組成物及びそれの方法 - Google Patents

下層組成物及びそれの方法 Download PDF

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Publication number
JP6122426B2
JP6122426B2 JP2014516452A JP2014516452A JP6122426B2 JP 6122426 B2 JP6122426 B2 JP 6122426B2 JP 2014516452 A JP2014516452 A JP 2014516452A JP 2014516452 A JP2014516452 A JP 2014516452A JP 6122426 B2 JP6122426 B2 JP 6122426B2
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polymer
composition
solution
lower layer
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Japanese (ja)
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JP2014526060A5 (enExample
JP2014526060A (ja
Inventor
ヤオ・フェイロン
リン・ガンヤン
ボグスズ・ザチェリー
ルゥ・ピーンホワン
キム・ウー−キュウ
ナイセル・マーク・オー
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Merck Patent GmbH
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Merck Patent GmbH
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • C08L101/02Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C08L101/06Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0091Complexes with metal-heteroatom-bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/56Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L37/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
JP2014516452A 2011-06-21 2012-06-18 下層組成物及びそれの方法 Active JP6122426B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/164,869 US8568958B2 (en) 2011-06-21 2011-06-21 Underlayer composition and process thereof
US13/164,869 2011-06-21
PCT/IB2012/001219 WO2012176043A1 (en) 2011-06-21 2012-06-18 An underlayer composition and process thereof

Publications (3)

Publication Number Publication Date
JP2014526060A JP2014526060A (ja) 2014-10-02
JP2014526060A5 JP2014526060A5 (enExample) 2015-09-24
JP6122426B2 true JP6122426B2 (ja) 2017-04-26

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ID=46465239

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Application Number Title Priority Date Filing Date
JP2014516452A Active JP6122426B2 (ja) 2011-06-21 2012-06-18 下層組成物及びそれの方法

Country Status (8)

Country Link
US (1) US8568958B2 (enExample)
EP (1) EP2723809B1 (enExample)
JP (1) JP6122426B2 (enExample)
KR (1) KR101824763B1 (enExample)
CN (1) CN103582665B (enExample)
SG (1) SG194106A1 (enExample)
TW (1) TWI560523B (enExample)
WO (1) WO2012176043A1 (enExample)

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US9201305B2 (en) * 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9418836B2 (en) * 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
EP3122792B1 (en) * 2014-03-28 2018-10-17 Versalis S.P.A. Vinyl polymers having a flame-retardant function
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US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US9957339B2 (en) * 2015-08-07 2018-05-01 Rohm And Haas Electronic Materials Llc Copolymer and associated layered article, and device-forming method
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
TWI737872B (zh) 2016-12-21 2021-09-01 德商馬克專利公司 用於嵌段共聚物之自組裝之新穎組合物及方法
KR102456279B1 (ko) 2017-03-16 2022-10-18 메르크 파텐트 게엠베하 리소그래피 조성물 및 이의 사용 방법
KR102399362B1 (ko) 2017-09-06 2022-05-18 메르크 파텐트 게엠베하 하드 마스크로서 유용한 스핀-온 무기 산화물 함유 조성물 및 개선된 열적 안정성을 지닌 충전 재료
US10998191B2 (en) 2018-11-13 2021-05-04 International Business Machines Corporation Graded hardmask interlayer for enhanced extreme ultraviolet performance
JP7550211B2 (ja) 2019-07-08 2024-09-12 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用
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JP2025113918A (ja) * 2024-01-23 2025-08-04 信越化学工業株式会社 金属含有膜形成用組成物、パターン形成方法

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Also Published As

Publication number Publication date
EP2723809B1 (en) 2020-01-08
EP2723809A1 (en) 2014-04-30
KR101824763B1 (ko) 2018-02-02
SG194106A1 (en) 2013-11-29
US8568958B2 (en) 2013-10-29
KR20140056178A (ko) 2014-05-09
WO2012176043A1 (en) 2012-12-27
TW201312281A (zh) 2013-03-16
CN103582665A (zh) 2014-02-12
TWI560523B (en) 2016-12-01
CN103582665B (zh) 2015-07-08
JP2014526060A (ja) 2014-10-02
US20120328990A1 (en) 2012-12-27

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