CN103582665B - 底层组合物及其方法 - Google Patents

底层组合物及其方法 Download PDF

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Publication number
CN103582665B
CN103582665B CN201280026263.9A CN201280026263A CN103582665B CN 103582665 B CN103582665 B CN 103582665B CN 201280026263 A CN201280026263 A CN 201280026263A CN 103582665 B CN103582665 B CN 103582665B
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China
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polymer
alkyl
group
primer composition
alkylene
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CN201280026263.9A
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Chinese (zh)
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CN103582665A (zh
Inventor
姚晖蓉
林观阳
Z·博格斯
卢炳宏
金羽圭
M·O·奈瑟
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Merck Patent GmbH
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Merck Patent GmbH
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C08L101/06—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0091—Complexes with metal-heteroatom-bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L37/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
CN201280026263.9A 2011-06-21 2012-06-18 底层组合物及其方法 Active CN103582665B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/164,869 2011-06-21
US13/164,869 US8568958B2 (en) 2011-06-21 2011-06-21 Underlayer composition and process thereof
PCT/IB2012/001219 WO2012176043A1 (en) 2011-06-21 2012-06-18 An underlayer composition and process thereof

Publications (2)

Publication Number Publication Date
CN103582665A CN103582665A (zh) 2014-02-12
CN103582665B true CN103582665B (zh) 2015-07-08

Family

ID=46465239

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280026263.9A Active CN103582665B (zh) 2011-06-21 2012-06-18 底层组合物及其方法

Country Status (8)

Country Link
US (1) US8568958B2 (enExample)
EP (1) EP2723809B1 (enExample)
JP (1) JP6122426B2 (enExample)
KR (1) KR101824763B1 (enExample)
CN (1) CN103582665B (enExample)
SG (1) SG194106A1 (enExample)
TW (1) TWI560523B (enExample)
WO (1) WO2012176043A1 (enExample)

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JP5889568B2 (ja) 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9201305B2 (en) * 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9418836B2 (en) 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
BR112016013773B1 (pt) * 2014-03-28 2021-06-08 Versalis S.P.A. polímeros de vinila contendo uma função retardante de chama
JP2015199916A (ja) * 2014-04-02 2015-11-12 Jsr株式会社 膜形成用組成物及びパターン形成方法
US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US9957339B2 (en) * 2015-08-07 2018-05-01 Rohm And Haas Electronic Materials Llc Copolymer and associated layered article, and device-forming method
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
KR102267528B1 (ko) 2016-12-21 2021-06-22 리지필드 액퀴지션 블록 공중합체의 자기-조립을 위한 신규한 조성물 및 방법
JP2020514509A (ja) 2017-03-16 2020-05-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ リソグラフィ用組成物及びそれの使用法
CN111051570B (zh) 2017-09-06 2022-05-10 默克专利股份有限公司 具有改善的热稳定性可用作硬掩膜的含旋涂式无机氧化物的组合物和填充材料
US10998191B2 (en) 2018-11-13 2021-05-04 International Business Machines Corporation Graded hardmask interlayer for enhanced extreme ultraviolet performance
TW202111105A (zh) 2019-07-08 2021-03-16 德商馬克專利公司 用於移除邊緣保護層及殘餘金屬硬遮罩組分之清洗劑及其使用方法
DE102019134535B4 (de) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
JP2025113918A (ja) * 2024-01-23 2025-08-04 信越化学工業株式会社 金属含有膜形成用組成物、パターン形成方法

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Also Published As

Publication number Publication date
EP2723809B1 (en) 2020-01-08
KR20140056178A (ko) 2014-05-09
EP2723809A1 (en) 2014-04-30
US20120328990A1 (en) 2012-12-27
US8568958B2 (en) 2013-10-29
JP6122426B2 (ja) 2017-04-26
CN103582665A (zh) 2014-02-12
KR101824763B1 (ko) 2018-02-02
SG194106A1 (en) 2013-11-29
TW201312281A (zh) 2013-03-16
TWI560523B (en) 2016-12-01
WO2012176043A1 (en) 2012-12-27
JP2014526060A (ja) 2014-10-02

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