TWI560523B - An underlayer composition and process thereof - Google Patents
An underlayer composition and process thereofInfo
- Publication number
- TWI560523B TWI560523B TW101122288A TW101122288A TWI560523B TW I560523 B TWI560523 B TW I560523B TW 101122288 A TW101122288 A TW 101122288A TW 101122288 A TW101122288 A TW 101122288A TW I560523 B TWI560523 B TW I560523B
- Authority
- TW
- Taiwan
- Prior art keywords
- underlayer composition
- underlayer
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C08L101/06—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0091—Complexes with metal-heteroatom-bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L37/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/164,869 US8568958B2 (en) | 2011-06-21 | 2011-06-21 | Underlayer composition and process thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201312281A TW201312281A (zh) | 2013-03-16 |
TWI560523B true TWI560523B (en) | 2016-12-01 |
Family
ID=46465239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101122288A TWI560523B (en) | 2011-06-21 | 2012-06-21 | An underlayer composition and process thereof |
Country Status (8)
Country | Link |
---|---|
US (1) | US8568958B2 (zh) |
EP (1) | EP2723809B1 (zh) |
JP (1) | JP6122426B2 (zh) |
KR (1) | KR101824763B1 (zh) |
CN (1) | CN103582665B (zh) |
SG (1) | SG194106A1 (zh) |
TW (1) | TWI560523B (zh) |
WO (1) | WO2012176043A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5889568B2 (ja) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法 |
US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
US9201305B2 (en) * | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
US9296922B2 (en) | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
US9418836B2 (en) * | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
MY178792A (en) * | 2014-03-28 | 2020-10-20 | Versalis Spa | Vinyl polymers having a flame-retardant function |
JP2015199916A (ja) * | 2014-04-02 | 2015-11-12 | Jsr株式会社 | 膜形成用組成物及びパターン形成方法 |
US9499698B2 (en) * | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
US9957339B2 (en) * | 2015-08-07 | 2018-05-01 | Rohm And Haas Electronic Materials Llc | Copolymer and associated layered article, and device-forming method |
US9929012B1 (en) | 2016-12-14 | 2018-03-27 | International Business Machines Corporation | Resist having tuned interface hardmask layer for EUV exposure |
EP3858872B1 (en) | 2016-12-21 | 2022-05-11 | Merck Patent GmbH | Compositions and processes for self-assembly of block copolymers |
JP2020514509A (ja) | 2017-03-16 | 2020-05-21 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | リソグラフィ用組成物及びそれの使用法 |
CN111051570B (zh) | 2017-09-06 | 2022-05-10 | 默克专利股份有限公司 | 具有改善的热稳定性可用作硬掩膜的含旋涂式无机氧化物的组合物和填充材料 |
US10998191B2 (en) | 2018-11-13 | 2021-05-04 | International Business Machines Corporation | Graded hardmask interlayer for enhanced extreme ultraviolet performance |
TW202111105A (zh) | 2019-07-08 | 2021-03-16 | 德商馬克專利公司 | 用於移除邊緣保護層及殘餘金屬硬遮罩組分之清洗劑及其使用方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1816575A (zh) * | 2003-07-02 | 2006-08-09 | 3M创新有限公司 | 氟化短链丙烯酸酯或甲基丙烯酸酯的氟化聚合物及以其为基础的斥油和斥水组合物 |
EP1798599A1 (en) * | 2005-12-14 | 2007-06-20 | Shinetsu Chemical Co., Ltd. | Antireflection film composition, patterning process and substrate using the same |
US20090286188A1 (en) * | 2008-05-15 | 2009-11-19 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
CN101796146A (zh) * | 2007-09-07 | 2010-08-04 | 3M创新有限公司 | 包含经表面改性的高折射率纳米粒子的自组装抗反射涂层 |
Family Cites Families (27)
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US3474054A (en) | 1966-09-13 | 1969-10-21 | Permalac Corp The | Surface coating compositions containing pyridine salts or aromatic sulfonic acids |
US4251665A (en) | 1978-05-22 | 1981-02-17 | King Industries, Inc. | Aromatic sulfonic acid oxa-azacyclopentane adducts |
US4200729A (en) | 1978-05-22 | 1980-04-29 | King Industries, Inc | Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts |
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE69125634T2 (de) | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
US5187019A (en) | 1991-09-06 | 1993-02-16 | King Industries, Inc. | Latent catalysts |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US6808859B1 (en) | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
US5879859A (en) * | 1997-07-16 | 1999-03-09 | International Business Machines Corporation | Strippable photoimageable compositions |
US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
US6348299B1 (en) * | 1999-07-12 | 2002-02-19 | International Business Machines Corporation | RIE etch resistant nonchemically amplified resist composition and use thereof |
JP2001058472A (ja) * | 1999-08-20 | 2001-03-06 | Fuji Photo Film Co Ltd | 平版印刷版原版 |
EP1302813A4 (en) | 2000-06-21 | 2005-02-23 | Asahi Glass Co Ltd | RESIST COMPOSITION |
US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
JP3800538B2 (ja) | 2001-02-09 | 2006-07-26 | 旭硝子株式会社 | レジスト組成物 |
US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
US6740469B2 (en) * | 2002-06-25 | 2004-05-25 | Brewer Science Inc. | Developer-soluble metal alkoxide coatings for microelectronic applications |
US6872506B2 (en) * | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
US20040171743A1 (en) | 2003-01-21 | 2004-09-02 | Terry Brewer, Ph.D. | Hybrid organic-inorganic polymer coatings with high refractive indices |
US8168372B2 (en) * | 2006-09-25 | 2012-05-01 | Brewer Science Inc. | Method of creating photolithographic structures with developer-trimmed hard mask |
US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
JP4809378B2 (ja) * | 2007-03-13 | 2011-11-09 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
JP5503916B2 (ja) * | 2008-08-04 | 2014-05-28 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
US8772376B2 (en) * | 2009-08-18 | 2014-07-08 | International Business Machines Corporation | Near-infrared absorbing film compositions |
WO2012053600A1 (ja) * | 2010-10-22 | 2012-04-26 | 日産化学工業株式会社 | フッ素系添加剤を有するシリコン含有レジスト下層膜形成組成物 |
-
2011
- 2011-06-21 US US13/164,869 patent/US8568958B2/en active Active
-
2012
- 2012-06-18 WO PCT/IB2012/001219 patent/WO2012176043A1/en unknown
- 2012-06-18 SG SG2013074646A patent/SG194106A1/en unknown
- 2012-06-18 JP JP2014516452A patent/JP6122426B2/ja active Active
- 2012-06-18 EP EP12732870.6A patent/EP2723809B1/en active Active
- 2012-06-18 CN CN201280026263.9A patent/CN103582665B/zh active Active
- 2012-06-18 KR KR1020137032152A patent/KR101824763B1/ko active IP Right Grant
- 2012-06-21 TW TW101122288A patent/TWI560523B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1816575A (zh) * | 2003-07-02 | 2006-08-09 | 3M创新有限公司 | 氟化短链丙烯酸酯或甲基丙烯酸酯的氟化聚合物及以其为基础的斥油和斥水组合物 |
EP1798599A1 (en) * | 2005-12-14 | 2007-06-20 | Shinetsu Chemical Co., Ltd. | Antireflection film composition, patterning process and substrate using the same |
CN101796146A (zh) * | 2007-09-07 | 2010-08-04 | 3M创新有限公司 | 包含经表面改性的高折射率纳米粒子的自组装抗反射涂层 |
US20090286188A1 (en) * | 2008-05-15 | 2009-11-19 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
Also Published As
Publication number | Publication date |
---|---|
EP2723809A1 (en) | 2014-04-30 |
SG194106A1 (en) | 2013-11-29 |
KR101824763B1 (ko) | 2018-02-02 |
US20120328990A1 (en) | 2012-12-27 |
US8568958B2 (en) | 2013-10-29 |
JP2014526060A (ja) | 2014-10-02 |
EP2723809B1 (en) | 2020-01-08 |
CN103582665A (zh) | 2014-02-12 |
KR20140056178A (ko) | 2014-05-09 |
CN103582665B (zh) | 2015-07-08 |
WO2012176043A1 (en) | 2012-12-27 |
TW201312281A (zh) | 2013-03-16 |
JP6122426B2 (ja) | 2017-04-26 |
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