KR101824763B1 - 하층 조성물 및 이의 방법 - Google Patents

하층 조성물 및 이의 방법 Download PDF

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Publication number
KR101824763B1
KR101824763B1 KR1020137032152A KR20137032152A KR101824763B1 KR 101824763 B1 KR101824763 B1 KR 101824763B1 KR 1020137032152 A KR1020137032152 A KR 1020137032152A KR 20137032152 A KR20137032152 A KR 20137032152A KR 101824763 B1 KR101824763 B1 KR 101824763B1
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polymer
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KR20140056178A (ko
Inventor
후이롱 야오
구아냥 린
자카리 보구즈
핑훙 루
우규 김
마크 오. 네이서
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메르크 파텐트 게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C08L101/06—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0091—Complexes with metal-heteroatom-bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L37/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
KR1020137032152A 2011-06-21 2012-06-18 하층 조성물 및 이의 방법 Active KR101824763B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/164,869 US8568958B2 (en) 2011-06-21 2011-06-21 Underlayer composition and process thereof
US13/164,869 2011-06-21
PCT/IB2012/001219 WO2012176043A1 (en) 2011-06-21 2012-06-18 An underlayer composition and process thereof

Publications (2)

Publication Number Publication Date
KR20140056178A KR20140056178A (ko) 2014-05-09
KR101824763B1 true KR101824763B1 (ko) 2018-02-02

Family

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Application Number Title Priority Date Filing Date
KR1020137032152A Active KR101824763B1 (ko) 2011-06-21 2012-06-18 하층 조성물 및 이의 방법

Country Status (8)

Country Link
US (1) US8568958B2 (enExample)
EP (1) EP2723809B1 (enExample)
JP (1) JP6122426B2 (enExample)
KR (1) KR101824763B1 (enExample)
CN (1) CN103582665B (enExample)
SG (1) SG194106A1 (enExample)
TW (1) TWI560523B (enExample)
WO (1) WO2012176043A1 (enExample)

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JP5889568B2 (ja) 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) * 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9418836B2 (en) * 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
BR112016013773B1 (pt) * 2014-03-28 2021-06-08 Versalis S.P.A. polímeros de vinila contendo uma função retardante de chama
JP2015199916A (ja) * 2014-04-02 2015-11-12 Jsr株式会社 膜形成用組成物及びパターン形成方法
US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US9957339B2 (en) * 2015-08-07 2018-05-01 Rohm And Haas Electronic Materials Llc Copolymer and associated layered article, and device-forming method
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
TWI755344B (zh) 2016-12-21 2022-02-11 德商馬克專利公司 用於嵌段共聚物之自組裝之新穎組合物及方法
US20200002568A1 (en) 2017-03-16 2020-01-02 Merck Patent Gmbh Lithographic compositions and methods of use thereof
WO2019048393A1 (en) 2017-09-06 2019-03-14 AZ Electronic Materials (Luxembourg) S.à.r.l. AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY
US10998191B2 (en) 2018-11-13 2021-05-04 International Business Machines Corporation Graded hardmask interlayer for enhanced extreme ultraviolet performance
US12099305B2 (en) 2019-07-08 2024-09-24 Merck Patent Gmbh Rinse and method of use thereof for removing edge protection layers and residual metal hardmask components
DE102019134535B4 (de) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
JP2025113918A (ja) * 2024-01-23 2025-08-04 信越化学工業株式会社 金属含有膜形成用組成物、パターン形成方法

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US6348299B1 (en) 1999-07-12 2002-02-19 International Business Machines Corporation RIE etch resistant nonchemically amplified resist composition and use thereof
US20030235786A1 (en) 2002-06-25 2003-12-25 Brewer Science, Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US20040058275A1 (en) 2002-06-25 2004-03-25 Brewer Science, Inc. Wet-developable anti-reflective compositions
US20100028804A1 (en) 2008-08-04 2010-02-04 Fujifilm Corporation Resist composition and method of forming pattern therewith

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US6348299B1 (en) 1999-07-12 2002-02-19 International Business Machines Corporation RIE etch resistant nonchemically amplified resist composition and use thereof
US20030235786A1 (en) 2002-06-25 2003-12-25 Brewer Science, Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US20040058275A1 (en) 2002-06-25 2004-03-25 Brewer Science, Inc. Wet-developable anti-reflective compositions
US20100028804A1 (en) 2008-08-04 2010-02-04 Fujifilm Corporation Resist composition and method of forming pattern therewith

Also Published As

Publication number Publication date
KR20140056178A (ko) 2014-05-09
US8568958B2 (en) 2013-10-29
CN103582665A (zh) 2014-02-12
JP6122426B2 (ja) 2017-04-26
EP2723809A1 (en) 2014-04-30
EP2723809B1 (en) 2020-01-08
US20120328990A1 (en) 2012-12-27
WO2012176043A1 (en) 2012-12-27
TWI560523B (en) 2016-12-01
SG194106A1 (en) 2013-11-29
TW201312281A (zh) 2013-03-16
JP2014526060A (ja) 2014-10-02
CN103582665B (zh) 2015-07-08

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