JP6093117B2 - フォトマスク、フォトマスクの製造方法及びパターンの転写方法 - Google Patents

フォトマスク、フォトマスクの製造方法及びパターンの転写方法 Download PDF

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Publication number
JP6093117B2
JP6093117B2 JP2012126114A JP2012126114A JP6093117B2 JP 6093117 B2 JP6093117 B2 JP 6093117B2 JP 2012126114 A JP2012126114 A JP 2012126114A JP 2012126114 A JP2012126114 A JP 2012126114A JP 6093117 B2 JP6093117 B2 JP 6093117B2
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JP
Japan
Prior art keywords
light
photomask
film
pattern
phase shift
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Application number
JP2012126114A
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English (en)
Japanese (ja)
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JP2013250478A5 (enExample
JP2013250478A (ja
Inventor
修久 今敷
修久 今敷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2012126114A priority Critical patent/JP6093117B2/ja
Priority to TW102117083A priority patent/TWI475316B/zh
Priority to TW104136941A priority patent/TWI605300B/zh
Priority to TW104101989A priority patent/TWI516857B/zh
Priority to KR1020130059063A priority patent/KR101528973B1/ko
Priority to CN201310208301.9A priority patent/CN103454851B/zh
Priority to CN201510763096.1A priority patent/CN105573046B/zh
Publication of JP2013250478A publication Critical patent/JP2013250478A/ja
Priority to KR1020140080183A priority patent/KR101999412B1/ko
Publication of JP2013250478A5 publication Critical patent/JP2013250478A5/ja
Application granted granted Critical
Publication of JP6093117B2 publication Critical patent/JP6093117B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2012126114A 2012-06-01 2012-06-01 フォトマスク、フォトマスクの製造方法及びパターンの転写方法 Active JP6093117B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2012126114A JP6093117B2 (ja) 2012-06-01 2012-06-01 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
TW104136941A TWI605300B (zh) 2012-06-01 2013-05-14 Photomask, pattern transfer method, flat panel display manufacturing method, and blank mask
TW104101989A TWI516857B (zh) 2012-06-01 2013-05-14 A flat panel display manufacturing mask, a pattern transfer method, and a method of manufacturing a flat panel display
TW102117083A TWI475316B (zh) 2012-06-01 2013-05-14 A method of manufacturing a mask and a mask, and a method of transferring the pattern
KR1020130059063A KR101528973B1 (ko) 2012-06-01 2013-05-24 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법
CN201310208301.9A CN103454851B (zh) 2012-06-01 2013-05-30 光掩模、光掩模的制造方法以及图案的转印方法
CN201510763096.1A CN105573046B (zh) 2012-06-01 2013-05-30 光掩模、光掩模的制造方法以及图案的转印方法
KR1020140080183A KR101999412B1 (ko) 2012-06-01 2014-06-27 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012126114A JP6093117B2 (ja) 2012-06-01 2012-06-01 フォトマスク、フォトマスクの製造方法及びパターンの転写方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016196977A Division JP6322250B2 (ja) 2016-10-05 2016-10-05 フォトマスクブランク

Publications (3)

Publication Number Publication Date
JP2013250478A JP2013250478A (ja) 2013-12-12
JP2013250478A5 JP2013250478A5 (enExample) 2015-03-19
JP6093117B2 true JP6093117B2 (ja) 2017-03-08

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JP2012126114A Active JP6093117B2 (ja) 2012-06-01 2012-06-01 フォトマスク、フォトマスクの製造方法及びパターンの転写方法

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Country Link
JP (1) JP6093117B2 (enExample)
KR (2) KR101528973B1 (enExample)
CN (2) CN105573046B (enExample)
TW (3) TWI605300B (enExample)

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CN103969940A (zh) * 2014-04-22 2014-08-06 京东方科技集团股份有限公司 相移掩模板和源漏掩模板
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6774505B2 (ja) * 2016-12-28 2020-10-28 富士フイルム株式会社 パターンの製造方法、カラーフィルタの製造方法、固体撮像素子の製造方法および画像表示装置の製造方法
CN108319103B (zh) * 2017-01-16 2023-11-28 Hoya株式会社 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP2019012280A (ja) * 2018-09-19 2019-01-24 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
TWI712851B (zh) * 2018-10-22 2020-12-11 日商Ｈｏｙａ股份有限公司 光罩、光罩之製造方法及電子元件之製造方法
JP7261709B2 (ja) * 2019-09-13 2023-04-20 Hoya株式会社 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
JP7383490B2 (ja) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク
JP6872061B2 (ja) * 2020-05-11 2021-05-19 Hoya株式会社 フォトマスク及び表示装置の製造方法
CN116027625A (zh) * 2021-10-25 2023-04-28 深圳莱宝高科技股份有限公司 一种掩膜装置与曝光装置

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Also Published As

Publication number Publication date
KR101528973B1 (ko) 2015-06-15
KR20140099427A (ko) 2014-08-12
CN103454851B (zh) 2016-05-18
TW201400977A (zh) 2014-01-01
KR20130135751A (ko) 2013-12-11
TW201606421A (zh) 2016-02-16
TWI516857B (zh) 2016-01-11
TW201523123A (zh) 2015-06-16
KR101999412B1 (ko) 2019-07-11
TWI475316B (zh) 2015-03-01
TWI605300B (zh) 2017-11-11
CN105573046B (zh) 2019-12-10
JP2013250478A (ja) 2013-12-12
CN105573046A (zh) 2016-05-11
CN103454851A (zh) 2013-12-18

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