CN105573046B - 光掩模、光掩模的制造方法以及图案的转印方法 - Google Patents

光掩模、光掩模的制造方法以及图案的转印方法 Download PDF

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Publication number
CN105573046B
CN105573046B CN201510763096.1A CN201510763096A CN105573046B CN 105573046 B CN105573046 B CN 105573046B CN 201510763096 A CN201510763096 A CN 201510763096A CN 105573046 B CN105573046 B CN 105573046B
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light
photomask
phase shift
film
pattern
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CN105573046A (zh
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今敷修久
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201510763096.1A 2012-06-01 2013-05-30 光掩模、光掩模的制造方法以及图案的转印方法 Active CN105573046B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012126114A JP6093117B2 (ja) 2012-06-01 2012-06-01 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP2012-126114 2012-06-01
CN201310208301.9A CN103454851B (zh) 2012-06-01 2013-05-30 光掩模、光掩模的制造方法以及图案的转印方法

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CN105573046B true CN105573046B (zh) 2019-12-10

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JP (1) JP6093117B2 (enExample)
KR (2) KR101528973B1 (enExample)
CN (2) CN105573046B (enExample)
TW (3) TWI605300B (enExample)

Families Citing this family (15)

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CN103969940A (zh) * 2014-04-22 2014-08-06 京东方科技集团股份有限公司 相移掩模板和源漏掩模板
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6774505B2 (ja) * 2016-12-28 2020-10-28 富士フイルム株式会社 パターンの製造方法、カラーフィルタの製造方法、固体撮像素子の製造方法および画像表示装置の製造方法
CN108319103B (zh) * 2017-01-16 2023-11-28 Hoya株式会社 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP2019012280A (ja) * 2018-09-19 2019-01-24 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
TWI712851B (zh) * 2018-10-22 2020-12-11 日商Ｈｏｙａ股份有限公司 光罩、光罩之製造方法及電子元件之製造方法
JP7261709B2 (ja) * 2019-09-13 2023-04-20 Hoya株式会社 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
JP7383490B2 (ja) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク
JP6872061B2 (ja) * 2020-05-11 2021-05-19 Hoya株式会社 フォトマスク及び表示装置の製造方法
CN116027625A (zh) * 2021-10-25 2023-04-28 深圳莱宝高科技股份有限公司 一种掩膜装置与曝光装置

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JPH0311345A (ja) * 1989-06-08 1991-01-18 Oki Electric Ind Co Ltd ホトマスク及びこれを用いたパターン形成方法
JPH06123961A (ja) * 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
CN1523639A (zh) * 2003-02-17 2004-08-25 ���µ�����ҵ��ʽ���� 光掩模、使用该光掩模的图案形成方法及光掩模数据制作方法
JP2004309958A (ja) * 2003-04-10 2004-11-04 Matsushita Electric Ind Co Ltd フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
CN101046625A (zh) * 2006-03-31 2007-10-03 Hoya株式会社 图案缺陷检查方法、光掩模制造方法和显示装置基板制造方法
CN101408725A (zh) * 2007-09-29 2009-04-15 Hoya株式会社 灰色调掩模的制造方法和灰色调掩模以及图案转印方法
CN101441408A (zh) * 2007-11-22 2009-05-27 Hoya株式会社 光掩膜及光掩膜的制造方法,以及图案转印方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0311345A (ja) * 1989-06-08 1991-01-18 Oki Electric Ind Co Ltd ホトマスク及びこれを用いたパターン形成方法
JPH06123961A (ja) * 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
CN1523639A (zh) * 2003-02-17 2004-08-25 ���µ�����ҵ��ʽ���� 光掩模、使用该光掩模的图案形成方法及光掩模数据制作方法
JP2004309958A (ja) * 2003-04-10 2004-11-04 Matsushita Electric Ind Co Ltd フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
CN101046625A (zh) * 2006-03-31 2007-10-03 Hoya株式会社 图案缺陷检查方法、光掩模制造方法和显示装置基板制造方法
CN101408725A (zh) * 2007-09-29 2009-04-15 Hoya株式会社 灰色调掩模的制造方法和灰色调掩模以及图案转印方法
CN101441408A (zh) * 2007-11-22 2009-05-27 Hoya株式会社 光掩膜及光掩膜的制造方法,以及图案转印方法

Also Published As

Publication number Publication date
KR101528973B1 (ko) 2015-06-15
KR20140099427A (ko) 2014-08-12
CN103454851B (zh) 2016-05-18
TW201400977A (zh) 2014-01-01
KR20130135751A (ko) 2013-12-11
TW201606421A (zh) 2016-02-16
TWI516857B (zh) 2016-01-11
TW201523123A (zh) 2015-06-16
KR101999412B1 (ko) 2019-07-11
TWI475316B (zh) 2015-03-01
TWI605300B (zh) 2017-11-11
JP2013250478A (ja) 2013-12-12
JP6093117B2 (ja) 2017-03-08
CN105573046A (zh) 2016-05-11
CN103454851A (zh) 2013-12-18

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