JP6089099B2 - 電力トランジスタモジュール - Google Patents

電力トランジスタモジュール Download PDF

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Publication number
JP6089099B2
JP6089099B2 JP2015509111A JP2015509111A JP6089099B2 JP 6089099 B2 JP6089099 B2 JP 6089099B2 JP 2015509111 A JP2015509111 A JP 2015509111A JP 2015509111 A JP2015509111 A JP 2015509111A JP 6089099 B2 JP6089099 B2 JP 6089099B2
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JP
Japan
Prior art keywords
power
transistor
power transistor
node
segment
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Active
Application number
JP2015509111A
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English (en)
Japanese (ja)
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JP2015519741A (ja
JP2015519741A5 (https=
Inventor
デニソン マリー
デニソン マリー
ウドムパニャヴィット ウボル
ウドムパニャヴィット ウボル
ジョージ ロペス オスヴァルト
ジョージ ロペス オスヴァルト
モーリス カヤット ジョセフ
モーリス カヤット ジョセフ
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Publication of JP2015519741A5 publication Critical patent/JP2015519741A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07637—Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/655—Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Amplifiers (AREA)
JP2015509111A 2012-04-24 2013-04-24 電力トランジスタモジュール Active JP6089099B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/454,730 US8581660B1 (en) 2012-04-24 2012-04-24 Power transistor partial current sensing for high precision applications
US13/454,730 2012-04-24
PCT/US2013/038012 WO2013163308A1 (en) 2012-04-24 2013-04-24 Power transistor module

Publications (3)

Publication Number Publication Date
JP2015519741A JP2015519741A (ja) 2015-07-09
JP2015519741A5 JP2015519741A5 (https=) 2016-06-16
JP6089099B2 true JP6089099B2 (ja) 2017-03-01

Family

ID=49379538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015509111A Active JP6089099B2 (ja) 2012-04-24 2013-04-24 電力トランジスタモジュール

Country Status (4)

Country Link
US (1) US8581660B1 (https=)
JP (1) JP6089099B2 (https=)
CN (1) CN104247027B (https=)
WO (1) WO2013163308A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5664536B2 (ja) * 2011-12-19 2015-02-04 株式会社デンソー 電流検出回路および半導体集積回路装置
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
DE102018207308B4 (de) 2018-05-09 2020-07-02 Infineon Technologies Ag Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061863A (en) * 1989-05-16 1991-10-29 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor provided with a current detecting function
JPH05299431A (ja) * 1992-04-16 1993-11-12 Toyota Autom Loom Works Ltd 電流検出機能付トランジスタ
JP3243902B2 (ja) * 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
JPH11134049A (ja) * 1997-10-30 1999-05-21 Dve:Kk 基準電圧回路
JP3674333B2 (ja) * 1998-09-11 2005-07-20 株式会社日立製作所 パワー半導体モジュール並びにそれを用いた電動機駆動システム
US6369646B1 (en) * 2001-01-29 2002-04-09 Delphi Technologies, Inc. Leakage current compensation circuit
US6939743B2 (en) * 2002-01-29 2005-09-06 Advanced Power Technology, Inc. Split-gate power module and method for suppressing oscillation therein
CN100444371C (zh) * 2004-09-13 2008-12-17 国际整流器公司 功率半导体封装
JP4610453B2 (ja) * 2005-09-27 2011-01-12 三洋電機株式会社 電流検出回路
WO2007056253A2 (en) * 2005-11-03 2007-05-18 International Rectifier Corporation A semiconductor package that includes stacked semiconductor die
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5390064B2 (ja) * 2006-08-30 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置
JP4930904B2 (ja) * 2007-09-07 2012-05-16 サンケン電気株式会社 電気回路のスイッチング装置
JP2009277930A (ja) * 2008-05-15 2009-11-26 Nec Electronics Corp 半導体装置
JP5188465B2 (ja) * 2009-06-30 2013-04-24 日立オートモティブシステムズ株式会社 電流検出装置およびこれを用いた制御システム
JP5445329B2 (ja) * 2010-05-25 2014-03-19 株式会社デンソー 電力半導体装置
DE102010030317B4 (de) * 2010-06-21 2016-09-01 Infineon Technologies Ag Schaltungsanordnung mit Shuntwiderstand
DE102010038731B3 (de) * 2010-07-30 2011-12-08 Semikron Elektronik Gmbh & Co. Kg Submodul und Leistungshalbleitermodul
WO2012029652A1 (ja) * 2010-09-03 2012-03-08 三菱電機株式会社 半導体装置
CN202084540U (zh) * 2011-04-02 2011-12-21 四川大雁微电子有限公司 一种表面贴装型功率晶体管模块

Also Published As

Publication number Publication date
JP2015519741A (ja) 2015-07-09
CN104247027B (zh) 2017-09-12
CN104247027A (zh) 2014-12-24
US20130278328A1 (en) 2013-10-24
US8581660B1 (en) 2013-11-12
WO2013163308A1 (en) 2013-10-31

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