JP6087520B2 - ダイオード素子及び検出素子 - Google Patents

ダイオード素子及び検出素子 Download PDF

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Publication number
JP6087520B2
JP6087520B2 JP2012122572A JP2012122572A JP6087520B2 JP 6087520 B2 JP6087520 B2 JP 6087520B2 JP 2012122572 A JP2012122572 A JP 2012122572A JP 2012122572 A JP2012122572 A JP 2012122572A JP 6087520 B2 JP6087520 B2 JP 6087520B2
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Japan
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conductivity type
region
layer
electrode
diode element
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JP2012122572A
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English (en)
Japanese (ja)
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JP2013038390A (ja
JP2013038390A5 (https=
Inventor
亮太 関口
亮太 関口
誠 古藤
誠 古藤
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012122572A priority Critical patent/JP6087520B2/ja
Priority to EP12741393.8A priority patent/EP2732476A1/en
Priority to CN201280033860.4A priority patent/CN103650167A/zh
Priority to US14/125,561 priority patent/US9349881B2/en
Priority to PCT/JP2012/067020 priority patent/WO2013008687A1/en
Publication of JP2013038390A publication Critical patent/JP2013038390A/ja
Publication of JP2013038390A5 publication Critical patent/JP2013038390A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2012122572A 2011-07-13 2012-05-30 ダイオード素子及び検出素子 Active JP6087520B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012122572A JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子
EP12741393.8A EP2732476A1 (en) 2011-07-13 2012-06-27 Diode element and detecting device
CN201280033860.4A CN103650167A (zh) 2011-07-13 2012-06-27 二极管元件和检测设备
US14/125,561 US9349881B2 (en) 2011-07-13 2012-06-27 Diode element and detecting device
PCT/JP2012/067020 WO2013008687A1 (en) 2011-07-13 2012-06-27 Diode element and detecting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011154370 2011-07-13
JP2011154370 2011-07-13
JP2012122572A JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子

Publications (3)

Publication Number Publication Date
JP2013038390A JP2013038390A (ja) 2013-02-21
JP2013038390A5 JP2013038390A5 (https=) 2015-12-17
JP6087520B2 true JP6087520B2 (ja) 2017-03-01

Family

ID=46601870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012122572A Active JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子

Country Status (5)

Country Link
US (1) US9349881B2 (https=)
EP (1) EP2732476A1 (https=)
JP (1) JP6087520B2 (https=)
CN (1) CN103650167A (https=)
WO (1) WO2013008687A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2015144248A (ja) 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
JP6483628B2 (ja) * 2016-01-05 2019-03-13 日本電信電話株式会社 半導体光触媒
US10018507B2 (en) * 2016-07-18 2018-07-10 University Of Delaware Electromagnetic detector
CN113745815B (zh) * 2021-08-27 2022-05-20 西安交通大学 一种工作在太赫兹波段的协同联合天线
US20230178589A1 (en) * 2021-12-07 2023-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Guard Ring Design For Through Via

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018959A (ja) 1983-07-13 1985-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
DE3578271D1 (de) * 1984-11-02 1990-07-19 Toshiba Kawasaki Kk Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer.
JPH02262372A (ja) * 1989-04-03 1990-10-25 Fujitsu Ltd 半導体装置およびその製造方法
TW232079B (https=) * 1992-03-17 1994-10-11 Wisconsin Alumni Res Found
US5432374A (en) 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
JPH07201885A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置の製造方法
JP3298601B2 (ja) * 1994-09-14 2002-07-02 住友電気工業株式会社 電界効果トランジスタおよびその製造方法
JPH09162424A (ja) 1995-12-04 1997-06-20 Yokogawa Electric Corp アンテナ結合電界検出型光検出素子およびその製造方法
JPH10322147A (ja) * 1996-10-04 1998-12-04 Toshiba Corp 高周波電力増幅器およびこれを用いた移動体通信装置
JPH10256271A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 電界効果トランジスタおよび高周波電力増幅器
US6107649A (en) * 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
US7355260B2 (en) * 2004-06-30 2008-04-08 Freescale Semiconductor, Inc. Schottky device and method of forming
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
US7282386B2 (en) 2005-04-29 2007-10-16 Freescale Semiconductor, Inc. Schottky device and method of forming
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
KR100763915B1 (ko) * 2006-06-01 2007-10-05 삼성전자주식회사 낮은 항복 전압을 갖는 쇼트키 다이오드 및 그 제조 방법
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
US7869036B2 (en) 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5085241B2 (ja) * 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
JP5506258B2 (ja) 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
US7972913B2 (en) * 2009-05-28 2011-07-05 Freescale Semiconductor, Inc. Method for forming a Schottky diode
JP4837113B2 (ja) 2010-03-18 2011-12-14 ファナック株式会社 ロボットを用いた嵌合装置
JP5563356B2 (ja) 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器

Also Published As

Publication number Publication date
CN103650167A (zh) 2014-03-19
US9349881B2 (en) 2016-05-24
JP2013038390A (ja) 2013-02-21
WO2013008687A1 (en) 2013-01-17
EP2732476A1 (en) 2014-05-21
US20140124885A1 (en) 2014-05-08

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