JP6087142B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6087142B2 JP6087142B2 JP2012287333A JP2012287333A JP6087142B2 JP 6087142 B2 JP6087142 B2 JP 6087142B2 JP 2012287333 A JP2012287333 A JP 2012287333A JP 2012287333 A JP2012287333 A JP 2012287333A JP 6087142 B2 JP6087142 B2 JP 6087142B2
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- semiconductor layer
- nitride semiconductor
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- emitting device
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- 239000004065 semiconductor Substances 0.000 claims description 208
- 150000004767 nitrides Chemical class 0.000 claims description 117
- 239000000758 substrate Substances 0.000 claims description 23
- 230000007423 decrease Effects 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 238000000605 extraction Methods 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 7
- -1 InN Inorganic materials 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910019897 RuOx Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62B—DEVICES, APPARATUS OR METHODS FOR LIFE-SAVING
- A62B5/00—Other devices for rescuing from fire
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
- E04F19/00—Other details of constructional parts for finishing work on buildings
- E04F19/08—Built-in cupboards; Masks of niches; Covers of holes enabling access to installations
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06C—LADDERS
- E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
- E06C9/02—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes rigidly mounted
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06C—LADDERS
- E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
- E06C9/06—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted
- E06C9/08—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted with rigid longitudinal members
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Architecture (AREA)
- Mechanical Engineering (AREA)
- Civil Engineering (AREA)
- Business, Economics & Management (AREA)
- General Health & Medical Sciences (AREA)
- Structural Engineering (AREA)
- Emergency Management (AREA)
- Health & Medical Sciences (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Description
図1は本発明の第1実施形態に従う発光素子100の断面図であり、図2は本発明の第1実施形態に従う発光素子における窒化物半導体層130の部分拡大図である。
Claims (15)
- 基板と、
前記基板の上にある第1導電型半導体層と、
前記第1導電型半導体層の上にある活性層と、
前記活性層の上にある第2導電型半導体層と、
前記第2導電型半導体層の上面に前記第2導電型半導体層より小さな屈折率を有する窒化物半導体層と、
前記第2導電型半導体層と前記窒化物半導体層との間に配置された透光性オーミック層と、
を含み、
前記窒化物半導体層の屈折率は、前記第2導電型半導体層から遠いほど減少することを特徴とする、発光素子。 - 前記窒化物半導体層の屈折率が減少する方向は、前記活性層から前記第2導電型半導体層に向う方向と同一であることを特徴とする、請求項1に記載の発光素子。
- 前記窒化物半導体層の屈折率は、前記第2導電型半導体層と近い所が遠い所より大きいことを特徴とする、請求項1に記載の発光素子。
- 前記窒化物半導体層は、AlxGa1−xN層(0≦x≦1)を含むことを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記窒化物半導体層のAlの組成(x)は、前記第2導電型半導体層から遠いほど増加することを特徴とする、請求項4に記載の発光素子。
- 前記窒化物半導体層は、n型窒化物半導体層を含むことを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記窒化物半導体層の上にあって前記窒化物半導体層より小さな屈折率を有する透明絶縁層をさらに含むことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記透光性オーミック層は、前記第2導電型半導体層の屈折率と前記窒化物半導体層の屈折率との間の値を有する屈折率を備えることを特徴とする、請求項1乃至7のうち、いずれか1項に記載の発光素子。
- 前記第2導電型半導体層の上に配置される第2電極をさらに含み、
前記第2電極は前記透光性オーミック層の上に配置されることを特徴とする、請求項1乃至8のうち、いずれか1項に記載の発光素子。 - 前記第2電極は前記透光性オーミック層と接することを特徴とする、請求項9に記載の発光素子。
- 前記窒化物半導体層の屈折率(n)は前記活性層から前記第2導電型半導体層の方向に、2.4の屈折率から2.0の屈折率に徐々に減少することを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。
- 前記窒化物半導体層は、第1窒化物半導体層、第2窒化物半導体層、第3窒化物半導体層、第4窒化物半導体層、第5窒化物半導体層、第6窒化物半導体層、第7窒化物半導体層、第8窒化物半導体層、及び第9窒化物半導体層を含み、
前記第1窒化物半導体層はGaNであり、
前記第9窒化物半導体層はAlNであることを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。 - 前記透明絶縁層はシリコン酸化物またはシリコン窒化物を含むことを特徴とする、請求項7に記載の発光素子。
- 前記窒化物半導体層は、p型窒化物半導体層を含むことを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記窒化物半導体層は、アンドープド窒化物半導体層を含むことを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20120000622A KR20130079873A (ko) | 2012-01-03 | 2012-01-03 | 발광소자 및 이를 포함하는 조명시스템 |
KR10-2012-0000622 | 2012-01-03 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013140983A JP2013140983A (ja) | 2013-07-18 |
JP2013140983A5 JP2013140983A5 (ja) | 2016-02-04 |
JP6087142B2 true JP6087142B2 (ja) | 2017-03-01 |
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ID=47428533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012287333A Active JP6087142B2 (ja) | 2012-01-03 | 2012-12-28 | 発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9018652B2 (ja) |
EP (1) | EP2613368B1 (ja) |
JP (1) | JP6087142B2 (ja) |
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TWI758603B (zh) * | 2014-07-03 | 2022-03-21 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
CN105224120B (zh) * | 2014-07-03 | 2018-07-31 | 宸鸿科技(厦门)有限公司 | 基板结构 |
TWI759602B (zh) * | 2019-05-24 | 2022-04-01 | 晶元光電股份有限公司 | 半導體元件 |
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JPH09116192A (ja) * | 1995-10-16 | 1997-05-02 | Toshiba Corp | 発光ダイオード |
JP4356555B2 (ja) * | 1998-03-12 | 2009-11-04 | 日亜化学工業株式会社 | 窒化物半導体素子 |
CN100449808C (zh) * | 1998-03-12 | 2009-01-07 | 日亚化学工业株式会社 | 氮化物半导体元件 |
KR100683234B1 (ko) * | 1998-03-12 | 2007-02-15 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자 |
JP3804335B2 (ja) * | 1998-11-26 | 2006-08-02 | ソニー株式会社 | 半導体レーザ |
WO2002084829A1 (en) * | 2001-04-11 | 2002-10-24 | Cielo Communications, Inc. | Long wavelength vertical cavity surface emitting laser |
US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
TW493287B (en) * | 2001-05-30 | 2002-07-01 | Epistar Corp | Light emitting diode structure with non-conductive substrate |
JP2003168822A (ja) * | 2001-11-30 | 2003-06-13 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
JP4254373B2 (ja) * | 2003-06-24 | 2009-04-15 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
JP2007096116A (ja) * | 2005-09-29 | 2007-04-12 | Toyoda Gosei Co Ltd | 発光素子 |
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US20070228385A1 (en) * | 2006-04-03 | 2007-10-04 | General Electric Company | Edge-emitting light emitting diodes and methods of making the same |
TW200812113A (en) * | 2006-05-23 | 2008-03-01 | Alps Electric Co Ltd | Semiconductor light emitting element and method for manufacturing the same |
EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
US8158990B2 (en) * | 2006-10-05 | 2012-04-17 | Mitsubishi Chemical Corporation | Light emitting device using GaN LED chip |
WO2008121978A1 (en) * | 2007-03-29 | 2008-10-09 | The Regents Of The University Of California | Dual surface-roughened n-face high-brightness led |
JP2009038239A (ja) * | 2007-08-02 | 2009-02-19 | Toshiba Corp | 光半導体装置 |
JP5164641B2 (ja) * | 2008-04-02 | 2013-03-21 | Dowaエレクトロニクス株式会社 | 電流狭窄型半導体発光素子の製造方法 |
KR101072200B1 (ko) * | 2009-03-16 | 2011-10-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101028286B1 (ko) * | 2009-12-28 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP5994420B2 (ja) * | 2012-06-21 | 2016-09-21 | 豊田合成株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
US20140097442A1 (en) * | 2012-10-09 | 2014-04-10 | Industrial Technology Research Institute | Nitride semiconductor device |
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JP2013140983A (ja) | 2013-07-18 |
EP2613368B1 (en) | 2020-05-06 |
US20130168711A1 (en) | 2013-07-04 |
EP2613368A3 (en) | 2016-02-17 |
CN103187496B (zh) | 2017-05-31 |
KR20130079873A (ko) | 2013-07-11 |
EP2613368A2 (en) | 2013-07-10 |
CN103187496A (zh) | 2013-07-03 |
TW201340386A (zh) | 2013-10-01 |
US9018652B2 (en) | 2015-04-28 |
TWI596798B (zh) | 2017-08-21 |
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