JP6082595B2 - 表面金属化の方法、プラスチック製品を調製する方法、およびそのような方法から製造されたプラスチック製品 - Google Patents
表面金属化の方法、プラスチック製品を調製する方法、およびそのような方法から製造されたプラスチック製品 Download PDFInfo
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- JP6082595B2 JP6082595B2 JP2012506325A JP2012506325A JP6082595B2 JP 6082595 B2 JP6082595 B2 JP 6082595B2 JP 2012506325 A JP2012506325 A JP 2012506325A JP 2012506325 A JP2012506325 A JP 2012506325A JP 6082595 B2 JP6082595 B2 JP 6082595B2
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- electroless plating
- plastic
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- accelerator
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Description
ステップ(1)
真空下でCuC2O4・2H2Oの結晶水を脱水した後、D50が1μm以下となるように、CuC2O4をボールミル処理し、乾燥する;PP樹脂、CuC2O4、タルカムパウダー、および酸化防止剤1010を、重量比で、100:15:10:0.2となるようにミキサーで混合してから、混合物をシングルスクリュー押出機で処理し、管状製品を形成する。
管状製品の外表面に、赤外線レーザ(DPF-M12)を照射する。照射条件は、以下を含む:レーザ波長約1064nm、走査速度約1000mm/秒、走査ステップサイズ約9μm、走査時間遅延約30μs、レーザパワー約3W、周波数約40kHz、充填距離約50μm。次に、管状製品を超音波洗浄する。
銅の無電解めっき液中に、管状製品を3時間配置し、約10μmの銅層を形成する。次に、ニッケルの無電解めっき液中に、10分間配置し、厚さ約3μmのニッケル層を形成する。銅の無電解めっき液は、pH値が約12.5から13であり、以下のように準備した:約0.12mol/LのCuSO4・5H2O、約0.14mol/LのNa2EDTA・2H2O、約10mg/Lのフェロシアン化カリウム、約10mg/Lの2,2’−ビピリジン、約0.10mol/LのHCOCOOH、NaOHおよびH2SO4。ニッケルの無電解めっき液は、NaOHおよびH2SO4によりpH値が約5.2となるように調整され、以下のように準備した:約23g/Lの硫酸ニッケル、約18g/Lの次亜リン酸ナトリウム、約20g/Lの乳酸、約15g/Lのリンゴ酸。
実施例2は、ほとんどの点で、実施例1と実質的に同様であるが、以下の点が異なる。
D50が2μm以下となるように、CuSiO3をボールミル処理する;PC樹脂、CuSiO3、酸化防止剤168、およびEVAワックスを、重量比で、100:20:0.2:0.1となるように混合した後、混合物を射出成形し、電気装置のシェルを形成する。
赤外線レーザ(DPF-M12)により、シェルの表面に回路パターンを印刷する;次に、シェルを超音波洗浄する。
ニッケルの無電解めっき液中に、シェルを10分間配置し、約3μmのニッケル層を形成する。次に、銅の無電解めっき液中に3時間配置し、約11μmの銅層を形成する。最後に、ニッケルの無電解めっき液中に、シェルを10分間配置し、約3μmのニッケル層を形成する。
実施例3は、ほとんどの点で、実施例2と実質的に同様であるが、以下の点が異なる。
D50が5μm以下となるように、Co2O3をボールミル処理する;ツインスクリュー押出機で、PBT樹脂、Co2O3、ガラス繊維、および光安定化剤944を、重量比で、100:15:35:0.2となるように混合した後、混合物を射出成形し、自動車コネクタのシェルを形成する。
ニッケルの無電解めっき液中に、シェルを10分間配置し、約3μmのニッケル層を形成する。次に、銅の無電解めっき液中に2時間配置し、約6μmの銅層を形成する。次に、ニッケルの無電解めっき液中に、シェルを10分間配置し、約3μmのニッケル層を形成する。最後に、ストライクめっきにより、厚さ約0.03μmのAu層をシェルに形成する。
実施例4は、ほとんどの点で、実施例2と実質的に同様であるが、以下の点が異なる。
D50が10μm以下となるように、Ni2O3をボールミル処理する;PC樹脂、Ni2O3、酸化防止剤1076、およびポリエチレンワックスを、重量比で、100:10:0.2:0.1となるように混合した後、混合物をブロー成形し、車両用の電気装置のシェルを形成する。
ニッケルの無電解めっき液中に、シェルを10分間配置し、約3μmのニッケル層を形成する。次に、銅の無電解めっき液中に2時間配置し、約6μmの銅層を形成する。最後に、ニッケルの無電解めっき液中に、シェルを12分間配置し、約4μmのニッケル層を形成する。
ステップ(1)
54.1gのCuO(0.68モル)、27.13gのFe2O3(0.17モル)、および26.87gのMn2O3(0.17モル)を混合し、真空炉内で、約1000℃の温度で2時間焼結した。次に、平均粒子直径が約0.8μmになるまで、混合物をボールミル処理し、その後、XPS法により、混合物をCuFe0.5Mn0.5O2.5として分析した。
PPO樹脂、CuFe0.5Mn0.5O2.5、ケイ酸カルシウム繊維、酸化防止剤1076を、重量比で、100:10:0.2:0.1となるように混合し、その後、混合物を射出成形し、太陽電池のコネクタシェルを形成する。
赤外線レーザ(DPF-M12)により、シェルの表面に回路パターンを印刷する;次に、シェルを超音波洗浄する。
ニッケルの無電解めっき液中に、シェルを8分間配置し、厚さ約2μmのニッケル層を形成する。次に、銅の無電解めっき液中に、シェルを4時間配置し、厚さ約15μmの銅層を形成する。最後に、ニッケルの無電解めっき液中に、シェルを10分間配置し、厚さ約3μmのニッケル層を形成する。
実施例6は、ほとんどの点で、実施例5と実質的に同様であるが、以下の点が異なる。
54.1gのCuO(0.68モル)、27.13gのFe2O3(0.17モル)、および17.33gのAl2O3(0.17モル)を混合し、真空炉内で、約1000℃の温度で2時間焼結した。次に、平均粒子直径が約0.5μmになるまで、混合物をボールミル処理し、その後、XPS法により、混合物をCuFe0.5Al0.5O2.5として分析した。
PA6T樹脂、CuFe0.5Al0.5O2.5、酸化防止剤1076、およびポリエチレンワックスを、重量比で、100:10:0.2:0.1となるように混合し、その後、混合物を射出成形し、車両用の電気装置のコネクタシェルを形成する。
ニッケルの無電解めっき液中に、シェルを8分間配置し、厚さ約2μmのニッケル層を形成する。次に、銅の無電解めっき液中に、シェルを4時間配置し、厚さ約15μmの銅層を形成する。次に、ニッケルの無電解めっき液中に、シェルを10分間配置し、厚さ約3μmのニッケル層を形成する。最後に、ストライクめっきにより、シェルに厚さが約0.03μmのAu層を形成する。
実施例7は、ほとんどの点で、実施例5と実質的に同様であるが、以下の点が異なる。
54.1gのCuO(0.68モル)、13.56gのFe2O3(0.085モル)、8.67gのAl2O3(0.085モル)、および26.87gのMn2O3(0.17モル)を混合し、真空炉内で、約1000℃の温度で2時間焼結した。次に、平均粒子直径が約1.0μmになるまで、混合物をボールミル処理し、その後、XPS法により、混合物をCuFe0.25Al0.25Mn0.5O2.5として分析した。
PPS樹脂、CuFe0.25Al0.25Mn0.5O2.5、酸化防止剤1076、およびポリエチレンワックスを、重量比で、100:10:0.2:0.1となるように混合し、その後、混合物を射出成形し、電気コネクタのシェルを形成する。
銅の無電解めっき液中に、シェルを3時間配置し、約12μmの銅層を形成する。次に、ニッケルの無電解めっき液中に、シェルを10分間配置し、厚さ約3μmのニッケル層を形成する。
ステップ(1)
平均粒子直径が50nmのNi2O3を100g、およびタルカムパウダー10gを、1000gのポリカーボネートに加える;高速で混合物を混合してから押出機に移し、粒子を形成する。次に、混合物を射出成形して、厚さ2mmのプラスチックサンプルを形成する。
実施例1のステップ(2)と実質的に同様の方法で、プラスチックサンプルの表面にレーザを照射する。
銅の無電解めっきのため、実施例1のステップ(3)で採用されたような銅の無電解めっき液中に、処理されたプラスチックサンプルを浸漬する。測定された銅のめっき速度は、4μm/時間である。
実施例9の各ステップは、本発明に示すようなプラスチック製品を調製するための実施例8のステップと同様であるが、以下の点が異なる。
平均粒子直径が100nmのCo2O3を100gおよびガラス繊維30gを、5000gのPCに添加する;混合物を高速で回転混合してから、押出機に混合物を移し、粒子を形成する;粒子を射出成形し、厚さ2mmのプラスチックサンプルを形成する。
レーザは、以下のパラメータを有する:波長300nm;走査速度5000mm/秒;走査ステップ3μm;時間遅延60μs;周波数40kHz;パワー3W;充填距離30μm。
銅の無電解めっきのため、実施例1のステップ(3)で採用したような銅の無電解めっき液中に、処理されたプラスチックサンプルを浸漬する。測定された銅のめっき速度は、2μm/時間である。
実施例10の各ステップは、本発明に示すようなプラスチック製品を調製するための実施例8のステップと同様であるが、以下の点が異なる。
平均粒子直径が500nmのCuSiO3を100gおよびカオリン70gを、10000gのPETに添加する;混合物を高速で回転混合してから、押出機に混合物を移し、粒子を形成する;粒子を射出成形し、厚さ2mmのプラスチックサンプルを形成する。
レーザは、以下のパラメータを有する:波長10600nm;走査速度8000mm/秒;走査ステップ6μm;時間遅延100μs;周波数30kHz;パワー4W;充填距離40μm。
銅の無電解めっきのため、実施例1のステップ(3)で採用したような銅の無電解めっき液中に、処理されたプラスチックサンプルを浸漬する。測定された銅のめっき速度は、5μm/時間である。
実施例11〜26では、実施例8と同様の表面金属化プロセスを使用したが、無電解めっき促進剤として、表1における材料を採用した点が異なる。実施例11〜26の測定された銅のメッキ速度を表1に示す。
参考例1では、選択的なプラスチック表面金属化のため、実施例8で使用された方法と同様の方法を使用した。違いは、ステップ(1)において、無電解めっき促進剤に、表1に示すような化合物を使用したことである。測定された銅のメッキ速度を、表1に示した。
実施例8および参考例1から、既存の触媒ZnOの場合、銅の無電解めっき速度は、0.05μm/時間しかないことがわかる。一方、同じ条件において、Ni2O3触媒の場合、銅の無電解めっき速度は、4μm/時間に達することがわかる。
実施例27〜45では、プラスチック表面に選択的金属化処理を実施するため、実施例8〜26と同様のプロセスを採用した。違いは、ステップ(3)における銅の無電解めっきの前に、ニッケルの無電解めっき液中で、ニッケルの無電解めっきを実施したことである。めっき液は、温度が90℃であり、測定されたニッケルのめっき速度は、表2に示されている。
参考例2では、選択的なプラスチック表面金属化のため、実施例27で使用された方法と同様の方法を使用した。違いは、ステップ(1)において、無電解めっき促進剤に、表2に示すような化合物を使用したことである。測定されたニッケルのメッキ速度を、表2に示した。
実施例27および参考例2から、既存の触媒ZnOの場合、ニッケルの無電解めっき速度は、0.05μm/時間しかないことがわかる。一方、同じ条件において、Ni2O3触媒の場合、ニッケルの無電解めっき速度は、3μm/時間に達することがわかる。
1)2009年12月17日に国家知的財産庁、中国P.R.に出願された中国特許出願第200910261216.2号、および
2)2009年12月30日に国家知的財産庁、中国P.R.に出願された中国特許出願第200910238957.9号
前述の特許出願は、その全内容を本願の参照として援用する。
Claims (11)
- プラスチックの表面を金属化する方法であって、
前記プラスチックは、樹脂からなる支持材料および無電解めっき促進剤を有し、
当該方法は、
1)前記プラスチックの表面を気化して、前記無電解めっき促進剤を露出させるステップと、
2)前記プラスチックの表面に、銅またはニッケルの層を無電解めっきし、その後、電解めっきまたは第2の無電解めっきにより、前記プラスチックの表面に、金属化層を形成するステップと、
を有し、
前記無電解めっき促進剤は、以下からなる群から選定された、1または2以上の材料を含み:
(a)Co、Ni、Agから選択された金属元素の酸化物;
(b)Co、Ni、Cuから選択された金属元素のケイ酸塩、ホウ酸塩、またはシュウ酸塩;
(c)Co、Ni、Cu、Agから選択された、1または2以上の金属元素を含む水素化触媒;
(d)デラフォス石(delafossite)構造を有するABO2型複合酸化物であって、Aは、Co、Ni、Cuから選択された金属元素の一つであり、Bは、Ni、Mn、Cr、Al、およびFeからなる群から選択された元素であり、AとBは異なる、ABO2型複合酸化物;ならびに
(e)Cu/Fe/Mn、Cu/Fe/Al、および/またはCu/Fe/Al/Mnの多成分酸化物からなる群から選択された多成分酸化物;
前記プラスチックの表面は、レーザにより気化され、前記無電解めっき促進剤が露出され、
前記レーザは、前記無電解めっき促進剤を純金属まで還元しない、方法。 - 前記無電解めっき促進剤は、以下からなる群から選定された1または2以上の材料を含むことを特徴とする請求項1に記載の方法。
(a)Ni2O3、Co2O3、Co3O4;
(b)CuSiO3、NiSiO3、CoSiO3、CuB2O4、Cu3B2O6、NiB2O4、Ni3B2O6、NiC2O4、CoC2O4、CuC2O4;
(c)Cu−Zn、Cu−Zn−Ni、Cu−Zn−Co、Cu−Zn−Ga、Co−La、Cu−Cd、およびCu−Zn−Siの水素化触媒;
(d)MNiO2、MMnO2、MCrO2、MAlO2、MFeO2、ここでMは、Cu、Ni、またはCoである。 - 前記多成分酸化物は、それぞれ、以下の化学式を有することを特徴とする請求項1に記載の方法:
CuFexMnyOz、CuFeeAlfOg、およびCuFeaAlbMncOd、ここで、x、y、z、e、f、g、a、b、c、およびdは、0.01≦x≦2、0.01≦y≦2、2≦z≦4、0.01≦e≦2、0.01≦f≦2、2≦g≦4、および0.01≦a≦2、0.01≦b≦2、0.01≦c≦2、2≦d≦4を満たす。 - 前記支持材料は、熱可塑性材料または熱硬化性樹脂材料であり、
前記無電解めっき促進剤は、重量比で、前記支持材料の約1%から約40%の量であり、
前記支持材料は、さらに、無機フィラー、酸化防止剤、光安定化剤、および潤滑剤から選択された少なくとも一つの材料を有することを特徴とする請求項1に記載の方法。 - プラスチック製品を調製する方法であって、
1)樹脂からなる支持材料および無電解めっき促進剤を含むサポートを有するプラスチック製品の少なくとも一部を形成するステップと、
2)前記サポートの表面を気化して、前記無電解めっき促進剤を露出させるステップと、
3)前記表面に、銅またはニッケルの層を無電解めっきしてから、少なくとももう一度、電解めっきまたは無電解めっきを行い、前記表面に金属化層を形成するステップと、
を有し、
前記無電解めっき促進剤は、以下からなる群から選定された、1または2以上の材料を含み:
(a)Co、Ni、Agから選択された金属元素の酸化物;
(b)Co、Ni、Cuから選択された金属元素のケイ酸塩、ホウ酸塩、またはシュウ酸塩;
(c)Co、Ni、Cu、Agから選択された、1または2以上の金属元素を含む水素化触媒;
(d)デラフォス石(delafossite)構造を有するABO2型複合酸化物であって、Aは、Co、Ni、Cuから選択された金属元素の一つであり、Bは、Ni、Mn、Cr、Al、およびFeからなる群から選択された元素であり、AとBは異なる、ABO2型複合酸化物;ならびに
(e)Cu/Fe/Mn、Cu/Fe/Al、および/またはCu/Fe/Al/Mnの多成分酸化物からなる群から選択された多成分酸化物;
前記サポートの表面は、レーザによって気化され、前記無電解めっき促進剤が露出され、
前記レーザは、前記無電解めっき促進剤を純金属まで還元しない、方法。 - 前記ステップ3)は、さらに、追加の電解めっきおよび/または無電解めっきを実施するステップを有し、前記サポート上に、それぞれ、Ni−Cu−Ni、Ni−Cu−Ni−Au、Cu−Ni、またはCu−Ni−Au層が形成され、
Ni−Cu−Ni、Ni−Cu−Ni−Au、Cu−Ni、およびCu−Ni−Auの層において、それぞれ、前記ニッケル層は、約0.1〜100μmの厚さを有し、前記銅層は、約0.1〜100μmの厚さを有し、前記Au層は、約0.01〜10μmの厚さを有することを特徴とする請求項5に記載の方法。 - 前記無電解めっき促進剤は、100μm以下の平均直径を有する粒子であることを特徴とする請求項5に記載の方法。
- 前記多成分酸化物は、それぞれ、以下の化学式を有することを特徴とする請求項5に記載の方法:
CuFexMnyOz、CuFeeAlfOg、およびCuFeaAlbMncOd、ここで、x、y、z、e、f、g、a、b、c、およびdは、0.01≦x≦2、0.01≦y≦2、2≦z≦4、0.01≦e≦2、0.01≦f≦2、2≦g≦4、および0.01≦a≦2、0.01≦b≦2、0.01≦c≦2、2≦d≦4を満たす。 - 前記無電解めっき促進剤は、重量比で、前記サポートの約1%から約40%の量であり、
前記支持材料は、さらに、無機フィラー、酸化防止剤、光安定化剤、および潤滑剤から選択された少なくとも一つの材料を有することを特徴とする請求項5に記載の方法。 - 前記水素化触媒は、Cu−Zn水素化触媒、Cu−Zn−Ni水素化触媒、Cu−Zn−Co水素化触媒、Cu−Zn−Ga水素化触媒、Co−La水素化触媒、Cu−Cd水素化触媒、およびCu−Zn−Si水素化触媒からなる群から選定された少なくとも一つであることを特徴とする請求項5に記載の方法。
- 前記無電解めっき促進剤は、前記支持材料内に均一に分散されることを特徴とする請求項5に記載の方法。
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EP2584065A2 (en) | 2013-04-24 |
KR101615846B1 (ko) | 2016-04-26 |
EP2584066A2 (en) | 2013-04-24 |
US20160068963A1 (en) | 2016-03-10 |
EP2584065A3 (en) | 2013-05-01 |
KR20130064823A (ko) | 2013-06-18 |
EP2584064B1 (en) | 2015-07-29 |
EP2584066B1 (en) | 2014-04-16 |
EP2584064A3 (en) | 2013-05-01 |
KR101607045B1 (ko) | 2016-03-28 |
KR20130064824A (ko) | 2013-06-18 |
KR20140044408A (ko) | 2014-04-14 |
EP2584066A3 (en) | 2013-05-01 |
KR20130064822A (ko) | 2013-06-18 |
EP2379772A1 (en) | 2011-10-26 |
KR20140129381A (ko) | 2014-11-06 |
EP2584064A2 (en) | 2013-04-24 |
EP2379772A4 (en) | 2012-07-25 |
EP2584065B1 (en) | 2014-04-16 |
JP2012524169A (ja) | 2012-10-11 |
KR101313151B1 (ko) | 2013-09-30 |
DK2584065T3 (da) | 2014-07-14 |
KR101623664B1 (ko) | 2016-05-23 |
US20110281135A1 (en) | 2011-11-17 |
WO2011072506A1 (en) | 2011-06-23 |
DK2584066T3 (da) | 2014-07-14 |
EP2379772B1 (en) | 2015-07-29 |
KR20110112860A (ko) | 2011-10-13 |
KR20140129382A (ko) | 2014-11-06 |
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