JP6063669B2 - 電子機器及び電子機器の製造方法 - Google Patents
電子機器及び電子機器の製造方法 Download PDFInfo
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- JP6063669B2 JP6063669B2 JP2012177416A JP2012177416A JP6063669B2 JP 6063669 B2 JP6063669 B2 JP 6063669B2 JP 2012177416 A JP2012177416 A JP 2012177416A JP 2012177416 A JP2012177416 A JP 2012177416A JP 6063669 B2 JP6063669 B2 JP 6063669B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 10
- 239000011347 resin Substances 0.000 claims description 83
- 229920005989 resin Polymers 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
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Description
図1は、電子部品を配線基板に固定する前の状態における本発明の第1実施形態に係る電子機器を示す平面図である。また、図2は、電子部品を配線基板に固定する前の状態における本発明の第1実施形態に係る電子機器を示す電子部品の裏面と配線基板の表面とを対向させた状態での図1のA−A断面での断面図である。
図9は、電子部品を配線基板に固定する前の状態における本発明の第2実施形態に係る電子機器を示す平面図である。
電子部品2は、基板にバンプ接続される集積回路チップなどであっても構わないが、本実施形態では、電子部品2を裏面電極型太陽電池セルにする。図10は、本実施形態の電子機器が備える裏面電極型太陽電池セル20の模式的な縦断面図である。
以上、本発明の実施形態につき説明したが、本発明の範囲はこれに限定されるものではなく、発明の主旨を逸脱しない範囲で種々の変更を加えて実施することができる。
2 電子部品
3 絶縁性可撓基材
4 配線
5 配線基板
6 樹脂
7 導電性材料
20 裏面電極型太陽電池セル
21 半導体基板
22 反射防止膜
23 絶縁膜
24 第1導電型用電極
25 第2導電型用電極
26 第1導電型不純物拡散領域
27 第2導電型不純物拡散領域
50 配線シート
51 絶縁性可撓基材
52 第1配線
53 第2配線
54 セル配置部
Claims (8)
- 裏面に電極を備えた電子部品と、
絶縁性可撓基材の表面に配線を形成した配線基板とを含む電子機器であって、
前記電子部品は前記配線基板に絶縁性の樹脂によって固定されており、
前記樹脂の外縁形状は、前記配線上に位置する部分において角度が90度以下である角部を有している、電子機器。 - 前記樹脂の外縁線と前記配線の外縁線とが斜めに交差する、請求項1に記載の電子機器。
- 前記配線は帯状であり、
前記樹脂の外縁形状は、前記配線の幅方向の中央部上に位置する部分において前記角部を有している、請求項1または請求項2に記載の電子機器。 - 前記角部が弧状に形成されている、請求項1〜3のいずれか1項に記載の電子機器。
- 前記樹脂の全てが前記電子部品の裏面の領域内に配置されている、請求項1〜4のいずれか1項に記載の電子機器。
- 前記電子部品を複数備え、
前記電子部品の表面側から見て、隣接する前記電子部品同士の間に前記配線基板の前記配線が形成されている部分が存在する、請求項5に記載の電子機器。 - 請求項1〜6のいずれか1項に記載の電子機器の製造方法であって、
電子部品の裏面に樹脂を印刷によって配置する工程と、
前記樹脂が印刷された前記電子部品の樹脂配置面と絶縁性可撓基材の表面に配線を形成した配線基板の配線面とを貼り合わせて前記電子部品を前記配線基板に固定する工程とを含む、電子機器の製造方法。 - 請求項1〜6のいずれか1項に記載の電子機器の製造方法であって、
絶縁性可撓基材の表面に配線を形成した配線基板の配線面に樹脂を印刷によって配置する工程と、
電子部品の裏面と前記樹脂が印刷された前記配線基板の樹脂配置面とを貼り合わせて前記電子部品を前記配線基板に固定する工程を含む、電子機器の製造方法。
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