JP6040140B2 - 有機エレクトロルミネッセンスデバイス - Google Patents
有機エレクトロルミネッセンスデバイス Download PDFInfo
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- JP6040140B2 JP6040140B2 JP2013252975A JP2013252975A JP6040140B2 JP 6040140 B2 JP6040140 B2 JP 6040140B2 JP 2013252975 A JP2013252975 A JP 2013252975A JP 2013252975 A JP2013252975 A JP 2013252975A JP 6040140 B2 JP6040140 B2 JP 6040140B2
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
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- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
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- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical group C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- 125000005504 styryl group Chemical group 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Description
可撓性の基材、または、該基材上に形成された少なくとも一層の有機樹脂膜に接するように形成された、少なくとも一層の無機バリア膜と、
前記無機バリア膜上に形成され、陽極、有機発光層を含む有機層、及び、陰極を含む、少なくとも一つの有機エレクトロルミネッセンス素子と、
可撓性の封止フィルムと封止膜との少なくとも一方を有し、前記少なくとも一つの有機エレクトロルミネッセンス素子を外気から遮蔽する封止部と、を備え、
前記無機バリア膜は、外部圧縮応力がかけられた状態を維持するように、凹状に変形させた状態で保持されている、ことを特徴とする。
まず、基材2としてのPET(ポリエチレンテレフタレート)フィルムを準備し、これを微粘着シートと貼り合わせ、さらにガラス基板に仮固定した。次に、このPETフィルム表面に有機樹脂膜3としてのアクリル樹脂を塗布、硬化させ、その表面を清浄化した。続いて、スパッタ法により100℃で樹脂膜上に無機バリア膜4を構成するSiO2(酸化ケイ素)を成膜した。さらに、プラズマCVD法で無機バリア膜4を構成するSiONまたはSiNxを積層した。このときの温度は120〜170℃とした。
実施例2ではフィルムカラー有機ELデバイスディスプレイを作製する例を示す。
2 基材
3 有機樹脂膜
4 無機バリア膜
5 有機EL素子
6 封止膜
7 接着材
8 封止フィルム
51 陽極
52 有機層
53 陰極
Claims (2)
- 可撓性の基材、または、該基材上に形成された少なくとも一層の有機樹脂膜に接するように形成された、少なくとも一層の無機バリア膜と、
前記無機バリア膜上に形成され、陽極、有機発光層を含む有機層、及び、陰極を含む、少なくとも一つの有機エレクトロルミネッセンス素子と、
可撓性の封止フィルムと封止膜との少なくとも一方を有し、前記少なくとも一つの有機エレクトロルミネッセンス素子を外気から遮蔽する封止部と、を備え、
前記無機バリア膜は、外部圧縮応力がかけられた状態を維持するように、凹状に変形させた状態で保持されている、ことを特徴とする有機エレクトロルミネッセンスデバイス。 - 前記少なくとも一つの有機エレクトロルミネッセンス素子または前記封止膜と、前記可撓性の封止フィルムとの間に、液体状、ゲル状または可撓性を有する固体状の乾燥機能を有する層を備える、ことを特徴とする請求項1に記載の有機エレクトロルミネッセンスデバイス。
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EP14195833.0A EP2884554A1 (en) | 2013-12-06 | 2014-12-02 | Organic electroluminescence device |
US14/562,426 US20150162564A1 (en) | 2013-12-06 | 2014-12-05 | Organic electroluminescence device |
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US11233211B2 (en) * | 2018-03-14 | 2022-01-25 | Samsung Electronics Co., Ltd. | Electroluminescent device, manufacturing method thereof, and display device comprising the same |
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US8062707B2 (en) * | 2005-02-17 | 2011-11-22 | Konica Minolta Holdings, Inc. | Gas barrier film, gas barrier film manufacturing method, resin substrate for organic electroluminescent device using the aforesaid gas barrier film, and organic electroluminescent device using the aforementioned gas barrier film |
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