JP6039910B2 - 生成方法、プログラム及び情報処理装置 - Google Patents

生成方法、プログラム及び情報処理装置 Download PDF

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Publication number
JP6039910B2
JP6039910B2 JP2012059103A JP2012059103A JP6039910B2 JP 6039910 B2 JP6039910 B2 JP 6039910B2 JP 2012059103 A JP2012059103 A JP 2012059103A JP 2012059103 A JP2012059103 A JP 2012059103A JP 6039910 B2 JP6039910 B2 JP 6039910B2
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JP
Japan
Prior art keywords
pattern
mask pattern
value
mask
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012059103A
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English (en)
Japanese (ja)
Other versions
JP2013195440A (ja
JP2013195440A5 (enExample
Inventor
禎 荒井
禎 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012059103A priority Critical patent/JP6039910B2/ja
Priority to TW102107258A priority patent/TWI502287B/zh
Priority to US13/781,873 priority patent/US8756536B2/en
Priority to KR1020130024305A priority patent/KR101561733B1/ko
Priority to CN201310076853.9A priority patent/CN103309171B/zh
Publication of JP2013195440A publication Critical patent/JP2013195440A/ja
Publication of JP2013195440A5 publication Critical patent/JP2013195440A5/ja
Application granted granted Critical
Publication of JP6039910B2 publication Critical patent/JP6039910B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
    • G16Z99/00—Subject matter not provided for in other main groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/32—Circuit design at the digital level
    • G06F30/333—Design for testability [DFT], e.g. scan chain or built-in self-test [BIST]
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Artificial Intelligence (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Biology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Processing Or Creating Images (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
JP2012059103A 2012-03-15 2012-03-15 生成方法、プログラム及び情報処理装置 Expired - Fee Related JP6039910B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012059103A JP6039910B2 (ja) 2012-03-15 2012-03-15 生成方法、プログラム及び情報処理装置
TW102107258A TWI502287B (zh) 2012-03-15 2013-03-01 產生方法、儲存媒體及資訊處理設備
US13/781,873 US8756536B2 (en) 2012-03-15 2013-03-01 Generation method, storage medium, and information processing apparatus
KR1020130024305A KR101561733B1 (ko) 2012-03-15 2013-03-07 생성 방법, 저장 매체 및 정보 처리 장치
CN201310076853.9A CN103309171B (zh) 2012-03-15 2013-03-12 产生方法和信息处理设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012059103A JP6039910B2 (ja) 2012-03-15 2012-03-15 生成方法、プログラム及び情報処理装置

Publications (3)

Publication Number Publication Date
JP2013195440A JP2013195440A (ja) 2013-09-30
JP2013195440A5 JP2013195440A5 (enExample) 2015-04-30
JP6039910B2 true JP6039910B2 (ja) 2016-12-07

Family

ID=49134537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012059103A Expired - Fee Related JP6039910B2 (ja) 2012-03-15 2012-03-15 生成方法、プログラム及び情報処理装置

Country Status (5)

Country Link
US (1) US8756536B2 (enExample)
JP (1) JP6039910B2 (enExample)
KR (1) KR101561733B1 (enExample)
CN (1) CN103309171B (enExample)
TW (1) TWI502287B (enExample)

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JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
TWI620005B (zh) * 2014-08-18 2018-04-01 聯華電子股份有限公司 佈局圖案分割方法
WO2020154979A1 (zh) * 2019-01-30 2020-08-06 深圳晶源信息技术有限公司 一种图形图像联合优化的光刻掩模优化方法、装置及电子设备
CN113703290B (zh) * 2021-09-06 2024-05-28 深圳市先地图像科技有限公司 一种激光成像设备以及激光成像控制方法

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Also Published As

Publication number Publication date
US20130246982A1 (en) 2013-09-19
CN103309171A (zh) 2013-09-18
JP2013195440A (ja) 2013-09-30
US8756536B2 (en) 2014-06-17
TW201341972A (zh) 2013-10-16
CN103309171B (zh) 2016-01-20
KR101561733B1 (ko) 2015-10-19
TWI502287B (zh) 2015-10-01
KR20130105388A (ko) 2013-09-25

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