JP6035606B2 - プラズマ処理方法およびプラズマ処理装置 - Google Patents

プラズマ処理方法およびプラズマ処理装置 Download PDF

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Publication number
JP6035606B2
JP6035606B2 JP2013080901A JP2013080901A JP6035606B2 JP 6035606 B2 JP6035606 B2 JP 6035606B2 JP 2013080901 A JP2013080901 A JP 2013080901A JP 2013080901 A JP2013080901 A JP 2013080901A JP 6035606 B2 JP6035606 B2 JP 6035606B2
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Japan
Prior art keywords
plasma processing
pulse
plasma
gas
etching
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Japanese (ja)
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JP2014204050A (ja
JP2014204050A5 (enExample
Inventor
悟 武藤
悟 武藤
小野　哲郎
哲郎 小野
康雄 大越
康雄 大越
宏文 永徳
宏文 永徳
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2013080901A priority Critical patent/JP6035606B2/ja
Priority to TW102121544A priority patent/TWI501289B/zh
Priority to CN201310330382.XA priority patent/CN104103486B/zh
Priority to KR20130093845A priority patent/KR101485384B1/ko
Priority to US13/960,831 priority patent/US8969211B2/en
Publication of JP2014204050A publication Critical patent/JP2014204050A/ja
Priority to US14/603,187 priority patent/US10121640B2/en
Publication of JP2014204050A5 publication Critical patent/JP2014204050A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2013080901A 2013-04-09 2013-04-09 プラズマ処理方法およびプラズマ処理装置 Active JP6035606B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013080901A JP6035606B2 (ja) 2013-04-09 2013-04-09 プラズマ処理方法およびプラズマ処理装置
TW102121544A TWI501289B (zh) 2013-04-09 2013-06-18 A plasma processing method and a plasma processing apparatus
CN201310330382.XA CN104103486B (zh) 2013-04-09 2013-08-01 等离子体处理方法以及等离子体处理装置
US13/960,831 US8969211B2 (en) 2013-04-09 2013-08-07 Method and apparatus for plasma processing
KR20130093845A KR101485384B1 (ko) 2013-04-09 2013-08-07 플라즈마 처리 방법 및 플라즈마 처리 장치
US14/603,187 US10121640B2 (en) 2013-04-09 2015-01-22 Method and apparatus for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013080901A JP6035606B2 (ja) 2013-04-09 2013-04-09 プラズマ処理方法およびプラズマ処理装置

Related Child Applications (1)

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JP2016197746A Division JP6298867B2 (ja) 2016-10-06 2016-10-06 プラズマ処理方法およびプラズマ処理装置

Publications (3)

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JP2014204050A JP2014204050A (ja) 2014-10-27
JP2014204050A5 JP2014204050A5 (enExample) 2015-10-15
JP6035606B2 true JP6035606B2 (ja) 2016-11-30

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US (2) US8969211B2 (enExample)
JP (1) JP6035606B2 (enExample)
KR (1) KR101485384B1 (enExample)
CN (1) CN104103486B (enExample)
TW (1) TWI501289B (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US10707055B2 (en) 2017-11-17 2020-07-07 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6037914B2 (ja) * 2013-03-29 2016-12-07 富士フイルム株式会社 保護膜のエッチング方法およびテンプレートの製造方法
US9401263B2 (en) * 2013-09-19 2016-07-26 Globalfoundries Inc. Feature etching using varying supply of power pulses
TWI593015B (zh) * 2014-07-10 2017-07-21 東京威力科創股份有限公司 基板之高精度蝕刻方法
JP6316735B2 (ja) * 2014-12-04 2018-04-25 東京エレクトロン株式会社 プラズマエッチング方法
JP6491888B2 (ja) * 2015-01-19 2019-03-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US9640385B2 (en) * 2015-02-16 2017-05-02 Applied Materials, Inc. Gate electrode material residual removal process
JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
JP2017212361A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理装置及びパーティクル付着抑制方法
JP6807792B2 (ja) * 2017-03-27 2021-01-06 東京エレクトロン株式会社 プラズマ生成方法及びこれを用いたプラズマ処理方法、並びにプラズマ処理装置
US10529578B2 (en) 2017-11-12 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating semiconductor structure
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
JP2021503702A (ja) * 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理システムにおける変調供給源の改良された印加
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN111868873B (zh) 2017-11-17 2023-06-16 先进工程解决方案全球控股私人有限公司 等离子体处理源和衬底偏置的同步的脉冲化
US10971369B2 (en) 2018-01-31 2021-04-06 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11600713B2 (en) 2018-05-30 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
CN108566717B (zh) * 2018-06-29 2024-07-02 合肥中科离子医学技术装备有限公司 采用微波垂直注入激励等离子体发生装置
CN112424912B (zh) * 2019-06-21 2024-01-05 株式会社日立高新技术 等离子处理方法
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
US12154765B2 (en) * 2020-02-03 2024-11-26 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
CN113544823B (zh) * 2020-02-10 2024-04-12 株式会社日立高新技术 等离子处理方法
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
JP7291091B2 (ja) * 2020-03-16 2023-06-14 株式会社京三製作所 高周波電源装置及びその出力制御方法
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
JP7709871B2 (ja) * 2020-09-16 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2024157071A (ja) * 2021-09-27 2024-11-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR102784192B1 (ko) 2021-10-29 2025-03-21 주식회사 테이텀 클라우드 및 컨테이너 환경에서 동적으로 바뀌는 리소스에 대한 모니터링 및 이상탐지를 통한 자동 차단 방법 및 이를 지원하는 장치
US12131884B2 (en) * 2022-01-12 2024-10-29 Mks Instruments, Inc. Pulse and bias synchronization methods and systems
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
JP7519549B2 (ja) * 2022-07-25 2024-07-19 株式会社日立ハイテク プラズマ処理方法
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12334304B2 (en) * 2022-11-29 2025-06-17 Applied Materials, Inc. System and methods for implementing a micro pulsing scheme using dual independent pulsers
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application
KR102850016B1 (ko) * 2024-03-14 2025-08-26 (주)아센디아 펄스 이니셜 타임 제어 기능이 구비된 플라즈마 제너레이터

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2972227B2 (ja) 1989-05-29 1999-11-08 株式会社日立製作所 プラズマ処理方法及び装置
JP3002033B2 (ja) * 1991-09-27 2000-01-24 株式会社東芝 ドライエッチング方法
JP2764524B2 (ja) * 1993-09-28 1998-06-11 名古屋大学長 ラジカルの制御装置
JPH0888218A (ja) * 1994-09-16 1996-04-02 Kokusai Electric Co Ltd プラズマエッチング方法及びその装置
JP3951003B2 (ja) * 1995-11-17 2007-08-01 俊夫 後藤 プラズマ処理装置および方法
JP3486287B2 (ja) 1996-02-05 2004-01-13 スピードファム株式会社 プラズマエッチング装置
JP2764575B2 (ja) * 1996-08-05 1998-06-11 名古屋大学長 ラジカルの制御方法
JP3559429B2 (ja) * 1997-07-02 2004-09-02 松下電器産業株式会社 プラズマ処理方法
US6218196B1 (en) * 1998-05-06 2001-04-17 Mitsubishi Denki Kabushiki Kaisha Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
JP3063761B2 (ja) * 1999-05-31 2000-07-12 株式会社日立製作所 プラズマ処理方法及び装置
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
JP5172417B2 (ja) 2008-03-27 2013-03-27 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
WO2009140371A2 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
JP2010238881A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US8404598B2 (en) * 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
JP5694721B2 (ja) * 2009-10-27 2015-04-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5502210B2 (ja) * 2010-12-24 2014-05-28 三菱電機株式会社 微結晶半導体薄膜製造方法
TWI581304B (zh) * 2011-07-27 2017-05-01 日立全球先端科技股份有限公司 Plasma etching apparatus and dry etching method
JP5774933B2 (ja) * 2011-07-27 2015-09-09 株式会社日立ハイテクノロジーズ ドライエッチング方法およびプラズマエッチング装置
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
CN104103486B (zh) 2016-08-17
JP2014204050A (ja) 2014-10-27
TWI501289B (zh) 2015-09-21
US8969211B2 (en) 2015-03-03
KR20140122157A (ko) 2014-10-17
TW201440111A (zh) 2014-10-16
US20140302682A1 (en) 2014-10-09
US10121640B2 (en) 2018-11-06
CN104103486A (zh) 2014-10-15
US20150170880A1 (en) 2015-06-18
KR101485384B1 (ko) 2015-01-23

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