JP6033180B2 - ＴＥＭ試料調製における低ｋＶＦＩＢミリングのドーズ量ベースの終点決定 - Google Patents

ＴＥＭ試料調製における低ｋＶＦＩＢミリングのドーズ量ベースの終点決定 Download PDF

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JP6033180B2
JP6033180B2 JP2013156205A JP2013156205A JP6033180B2 JP 6033180 B2 JP6033180 B2 JP 6033180B2 JP 2013156205 A JP2013156205 A JP 2013156205A JP 2013156205 A JP2013156205 A JP 2013156205A JP 6033180 B2 JP6033180 B2 JP 6033180B2
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ion beam
focused ion
low energy
flakes
sample
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JP2014048285A (ja
JP2014048285A5 (enExample
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トーマス・ジー・ミラー
ジェイソン・アルジャヴァック
マイケル・モリアーティ
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エフ・イ−・アイ・カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2013156205A 2012-08-31 2013-07-27 ＴＥＭ試料調製における低ｋＶＦＩＢミリングのドーズ量ベースの終点決定 Active JP6033180B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/600,843 2012-08-31
US13/600,843 US10465293B2 (en) 2012-08-31 2012-08-31 Dose-based end-pointing for low-kV FIB milling TEM sample preparation

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JP2014048285A JP2014048285A (ja) 2014-03-17
JP2014048285A5 JP2014048285A5 (enExample) 2016-09-15
JP6033180B2 true JP6033180B2 (ja) 2016-11-30

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US (2) US10465293B2 (enExample)
EP (1) EP2704179B1 (enExample)
JP (1) JP6033180B2 (enExample)
CN (1) CN103674635B (enExample)

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CN104795302B (zh) 2013-10-29 2018-10-02 Fei 公司 具有用于横切应用的过程自动化的图案识别的差分成像
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CN105957789B (zh) * 2015-03-09 2020-05-12 Ib实验室有限公司 用于通过离子铣处理试样的方法、设备、系统和软件
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JP2017020106A (ja) 2015-07-02 2017-01-26 エフ・イ−・アイ・カンパニー 高スループット・パターン形成のための適応ビーム電流
US9978560B2 (en) 2016-06-30 2018-05-22 International Business Machines Corporation System and method for performing nano beam diffraction analysis
CN106629587B (zh) * 2016-10-25 2018-08-10 西安交通大学 一种基于fib的大角度正三棱锥形压头的一次成型方法
JP7113613B2 (ja) 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
JP7125786B2 (ja) * 2017-05-11 2022-08-25 ジェイ ピックレイン、リチャード 自動マルチグリッドハンドリング装置
DE102017212020B3 (de) 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
CN110006934A (zh) * 2017-12-28 2019-07-12 Fei 公司 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统
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US11176656B2 (en) * 2019-02-28 2021-11-16 Fei Company Artificial intelligence-enabled preparation end-pointing
US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching
US11631602B2 (en) * 2020-06-26 2023-04-18 Kla Corporation Enabling scanning electron microscope imaging while preventing sample damage on sensitive layers used in semiconductor manufacturing processes
US11636997B2 (en) * 2020-07-01 2023-04-25 Applied Materials Israel Ltd. Uniform milling of adjacent materials using parallel scanning fib
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Also Published As

Publication number Publication date
CN103674635A (zh) 2014-03-26
EP2704179B1 (en) 2016-04-27
JP2014048285A (ja) 2014-03-17
US20140061032A1 (en) 2014-03-06
EP2704179A3 (en) 2015-10-14
EP2704179A2 (en) 2014-03-05
CN103674635B (zh) 2018-08-31
US20200095688A1 (en) 2020-03-26
US10465293B2 (en) 2019-11-05
US11313042B2 (en) 2022-04-26

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