CN103674635B - 在TEM样品制备中用于低kV FIB铣削的基于剂量的端点确定 - Google Patents

在TEM样品制备中用于低kV FIB铣削的基于剂量的端点确定 Download PDF

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Publication number
CN103674635B
CN103674635B CN201310386836.5A CN201310386836A CN103674635B CN 103674635 B CN103674635 B CN 103674635B CN 201310386836 A CN201310386836 A CN 201310386836A CN 103674635 B CN103674635 B CN 103674635B
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China
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thin layer
ion beam
focused ion
low energy
milling
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Chinese (zh)
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CN103674635A (zh
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T.G.米勒
J.阿加瓦奇
M.莫里亚蒂
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FEI Co
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FEI Co
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201310386836.5A 2012-08-31 2013-08-30 在TEM样品制备中用于低kV FIB铣削的基于剂量的端点确定 Active CN103674635B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/600843 2012-08-31
US13/600,843 US10465293B2 (en) 2012-08-31 2012-08-31 Dose-based end-pointing for low-kV FIB milling TEM sample preparation

Publications (2)

Publication Number Publication Date
CN103674635A CN103674635A (zh) 2014-03-26
CN103674635B true CN103674635B (zh) 2018-08-31

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US (2) US10465293B2 (enExample)
EP (1) EP2704179B1 (enExample)
JP (1) JP6033180B2 (enExample)
CN (1) CN103674635B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ2013547A3 (cs) * 2013-07-11 2014-11-19 Tescan Orsay Holding, A.S. Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění
CN104795302B (zh) 2013-10-29 2018-10-02 Fei 公司 具有用于横切应用的过程自动化的图案识别的差分成像
DE102014014572B4 (de) * 2014-09-30 2023-08-17 Carl Zeiss Microscopy Gmbh Verfahren zum Strukturieren eines Objekts mit Hilfe eines Partikelstrahlgeräts
JP6552383B2 (ja) 2014-11-07 2019-07-31 エフ・イ−・アイ・カンパニー 自動化されたｔｅｍ試料調製
CN105957789B (zh) * 2015-03-09 2020-05-12 Ib实验室有限公司 用于通过离子铣处理试样的方法、设备、系统和软件
EP3104155A1 (en) * 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
JP2017020106A (ja) 2015-07-02 2017-01-26 エフ・イ−・アイ・カンパニー 高スループット・パターン形成のための適応ビーム電流
US9978560B2 (en) 2016-06-30 2018-05-22 International Business Machines Corporation System and method for performing nano beam diffraction analysis
CN106629587B (zh) * 2016-10-25 2018-08-10 西安交通大学 一种基于fib的大角度正三棱锥形压头的一次成型方法
JP7113613B2 (ja) 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
JP7125786B2 (ja) * 2017-05-11 2022-08-25 ジェイ ピックレイン、リチャード 自動マルチグリッドハンドリング装置
DE102017212020B3 (de) 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
CN110006934A (zh) * 2017-12-28 2019-07-12 Fei 公司 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统
US10401265B1 (en) * 2018-03-30 2019-09-03 Micron Technology, Inc. Methods for acquiring planar view stem images of device structures
WO2020150814A1 (en) * 2019-01-22 2020-07-30 Techinsights Inc. Ion beam delayering system and method, and endpoint monitoring system and method therefor
US11176656B2 (en) * 2019-02-28 2021-11-16 Fei Company Artificial intelligence-enabled preparation end-pointing
US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching
US11631602B2 (en) * 2020-06-26 2023-04-18 Kla Corporation Enabling scanning electron microscope imaging while preventing sample damage on sensitive layers used in semiconductor manufacturing processes
US11636997B2 (en) * 2020-07-01 2023-04-25 Applied Materials Israel Ltd. Uniform milling of adjacent materials using parallel scanning fib
US11199401B1 (en) * 2020-09-03 2021-12-14 Applied Materials Israel Ltd. End-point detection for similar adjacent materials
CN113984821B (zh) * 2021-12-29 2022-03-11 中国科学院地质与地球物理研究所 纳米结构三维成像系统与方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101644642A (zh) * 2003-11-11 2010-02-10 全域探测器公司 在聚焦离子束显微镜中进行快速样品制备的方法和装置
US7700367B2 (en) * 2003-07-08 2010-04-20 Sii Nanotechnology Inc. Method of making lamina specimen

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569139B2 (ja) * 1988-08-24 1997-01-08 株式会社日立製作所 イオンビーム加工方法
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
EP1183722A1 (en) * 2000-03-10 2002-03-06 Fei Company Apparatus and method for reducing differential sputter rates
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6838294B2 (en) 2002-02-13 2005-01-04 Intel Corporation Focused ion beam visual endpointing
JP4318962B2 (ja) 2003-06-02 2009-08-26 エスアイアイ・ナノテクノロジー株式会社 薄膜加工における膜厚制御方法とそれを実行するシステム
US6911832B2 (en) 2003-07-16 2005-06-28 Texas Instruments Incorporated Focused ion beam endpoint detection using charge pulse detection electronics
CA2587747C (en) * 2004-11-15 2013-01-08 Fibics Incorporated System and method for focused ion beam data analysis
US8093567B2 (en) * 2006-07-21 2012-01-10 Fibics Incorporated Method and system for counting secondary particles
JP5959139B2 (ja) * 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを分析する方法
US7880151B2 (en) * 2008-02-28 2011-02-01 Fei Company Beam positioning for beam processing
JP5537050B2 (ja) * 2008-04-11 2014-07-02 株式会社日立ハイテクノロジーズ 集束イオンビーム装置
CN101625302B (zh) * 2008-07-08 2011-05-11 中芯国际集成电路制造(上海)有限公司 制备透射电子显微镜样品的方法
JP5649583B2 (ja) 2008-10-31 2015-01-07 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ 加工終点検出方法及び装置
GB0905571D0 (en) * 2009-03-31 2009-05-13 Sec Dep For Innovation Univers Method and apparatus for producing three dimensional nano and micro scale structures
JP5364049B2 (ja) * 2010-07-07 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、および試料作成方法
US8859963B2 (en) * 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
EP2852967B1 (en) * 2012-05-21 2019-01-16 FEI Company Preparation of lamellae for tem viewing
JP6113842B2 (ja) 2012-07-16 2017-04-12 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700367B2 (en) * 2003-07-08 2010-04-20 Sii Nanotechnology Inc. Method of making lamina specimen
CN101644642A (zh) * 2003-11-11 2010-02-10 全域探测器公司 在聚焦离子束显微镜中进行快速样品制备的方法和装置

Also Published As

Publication number Publication date
CN103674635A (zh) 2014-03-26
JP6033180B2 (ja) 2016-11-30
EP2704179B1 (en) 2016-04-27
JP2014048285A (ja) 2014-03-17
US20140061032A1 (en) 2014-03-06
EP2704179A3 (en) 2015-10-14
EP2704179A2 (en) 2014-03-05
US20200095688A1 (en) 2020-03-26
US10465293B2 (en) 2019-11-05
US11313042B2 (en) 2022-04-26

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