JP2014048285A5 - - Google Patents

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Publication number
JP2014048285A5
JP2014048285A5 JP2013156205A JP2013156205A JP2014048285A5 JP 2014048285 A5 JP2014048285 A5 JP 2014048285A5 JP 2013156205 A JP2013156205 A JP 2013156205A JP 2013156205 A JP2013156205 A JP 2013156205A JP 2014048285 A5 JP2014048285 A5 JP 2014048285A5
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JP
Japan
Prior art keywords
ion beam
focused ion
low energy
flakes
energy focused
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JP2013156205A
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Japanese (ja)
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JP6033180B2 (ja
JP2014048285A (ja
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Priority claimed from US13/600,843 external-priority patent/US10465293B2/en
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JP2013156205A 2012-08-31 2013-07-27 ＴＥＭ試料調製における低ｋＶＦＩＢミリングのドーズ量ベースの終点決定 Active JP6033180B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/600,843 2012-08-31
US13/600,843 US10465293B2 (en) 2012-08-31 2012-08-31 Dose-based end-pointing for low-kV FIB milling TEM sample preparation

Publications (3)

Publication Number Publication Date
JP2014048285A JP2014048285A (ja) 2014-03-17
JP2014048285A5 true JP2014048285A5 (enExample) 2016-09-15
JP6033180B2 JP6033180B2 (ja) 2016-11-30

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JP2013156205A Active JP6033180B2 (ja) 2012-08-31 2013-07-27 ＴＥＭ試料調製における低ｋＶＦＩＢミリングのドーズ量ベースの終点決定

Country Status (4)

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US (2) US10465293B2 (enExample)
EP (1) EP2704179B1 (enExample)
JP (1) JP6033180B2 (enExample)
CN (1) CN103674635B (enExample)

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CN104795302B (zh) 2013-10-29 2018-10-02 Fei 公司 具有用于横切应用的过程自动化的图案识别的差分成像
DE102014014572B4 (de) * 2014-09-30 2023-08-17 Carl Zeiss Microscopy Gmbh Verfahren zum Strukturieren eines Objekts mit Hilfe eines Partikelstrahlgeräts
JP6552383B2 (ja) 2014-11-07 2019-07-31 エフ・イ−・アイ・カンパニー 自動化されたｔｅｍ試料調製
CN105957789B (zh) * 2015-03-09 2020-05-12 Ib实验室有限公司 用于通过离子铣处理试样的方法、设备、系统和软件
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CN106629587B (zh) * 2016-10-25 2018-08-10 西安交通大学 一种基于fib的大角度正三棱锥形压头的一次成型方法
JP7113613B2 (ja) 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
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US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching
US11631602B2 (en) * 2020-06-26 2023-04-18 Kla Corporation Enabling scanning electron microscope imaging while preventing sample damage on sensitive layers used in semiconductor manufacturing processes
US11636997B2 (en) * 2020-07-01 2023-04-25 Applied Materials Israel Ltd. Uniform milling of adjacent materials using parallel scanning fib
US11199401B1 (en) * 2020-09-03 2021-12-14 Applied Materials Israel Ltd. End-point detection for similar adjacent materials
CN113984821B (zh) * 2021-12-29 2022-03-11 中国科学院地质与地球物理研究所 纳米结构三维成像系统与方法

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