JP6025346B2 - 検出装置、露光装置及びデバイスを製造する方法 - Google Patents

検出装置、露光装置及びデバイスを製造する方法 Download PDF

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Publication number
JP6025346B2
JP6025346B2 JP2012048611A JP2012048611A JP6025346B2 JP 6025346 B2 JP6025346 B2 JP 6025346B2 JP 2012048611 A JP2012048611 A JP 2012048611A JP 2012048611 A JP2012048611 A JP 2012048611A JP 6025346 B2 JP6025346 B2 JP 6025346B2
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Prior art keywords
substrate
detector
wafer
mark
light
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Japanese (ja)
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JP2013187206A5 (enExample
JP2013187206A (ja
Inventor
普教 前田
普教 前田
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Canon Inc
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Canon Inc
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Priority to JP2012048611A priority Critical patent/JP6025346B2/ja
Priority to US13/762,476 priority patent/US9523927B2/en
Priority to KR1020130018971A priority patent/KR20130101458A/ko
Priority to CN201310062460.2A priority patent/CN103309169B/zh
Publication of JP2013187206A publication Critical patent/JP2013187206A/ja
Publication of JP2013187206A5 publication Critical patent/JP2013187206A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7057—Gas flow, e.g. for focusing, leveling or gap setting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2012048611A 2012-03-05 2012-03-05 検出装置、露光装置及びデバイスを製造する方法 Active JP6025346B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012048611A JP6025346B2 (ja) 2012-03-05 2012-03-05 検出装置、露光装置及びデバイスを製造する方法
US13/762,476 US9523927B2 (en) 2012-03-05 2013-02-08 Exposure apparatus with detection apparatus for detection of upper and lower surface marks, and device manufacturing method
KR1020130018971A KR20130101458A (ko) 2012-03-05 2013-02-22 검출 장치, 노광 장치, 및 디바이스 제조 방법
CN201310062460.2A CN103309169B (zh) 2012-03-05 2013-02-28 检测装置、曝光装置和制造器件的方法

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Application Number Priority Date Filing Date Title
JP2012048611A JP6025346B2 (ja) 2012-03-05 2012-03-05 検出装置、露光装置及びデバイスを製造する方法

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JP2013187206A JP2013187206A (ja) 2013-09-19
JP2013187206A5 JP2013187206A5 (enExample) 2015-04-23
JP6025346B2 true JP6025346B2 (ja) 2016-11-16

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US (1) US9523927B2 (enExample)
JP (1) JP6025346B2 (enExample)
KR (1) KR20130101458A (enExample)
CN (1) CN103309169B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11067908B2 (en) 2019-02-14 2021-07-20 Canon Kabushiki Kaisha Measurement apparatus, exposure apparatus, and method of manufacturing article

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6150490B2 (ja) * 2012-10-19 2017-06-21 キヤノン株式会社 検出装置、露光装置、それを用いたデバイスの製造方法
CN104950584B (zh) * 2014-03-25 2018-01-30 上海微电子装备（集团）股份有限公司 成像对准系统
EP3239776B1 (en) 2014-12-24 2021-07-07 Nikon Corporation Measurement device and measurement method, exposure device and exposure method, and device production method
DE102015209404B4 (de) * 2015-05-22 2018-05-03 Sirona Dental Systems Gmbh Verfahren und Kamera zur dreidimensionalen Vermessung eines dentalen Objekts
JP6552312B2 (ja) * 2015-07-16 2019-07-31 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法
JP6682263B2 (ja) * 2015-12-25 2020-04-15 キヤノン株式会社 検出装置、露光装置および物品の製造方法
JP6812661B2 (ja) * 2016-05-13 2021-01-13 Toto株式会社 水栓装置
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP6541733B2 (ja) * 2017-09-06 2019-07-10 キヤノン株式会社 基板配置方法
KR102120551B1 (ko) * 2018-09-14 2020-06-09 (주)오로스 테크놀로지 오버레이 측정장치
CN109188869B (zh) * 2018-09-29 2020-08-28 宁波市效实中学 一种在不透明基底上制备微结构的方法
JP2020122930A (ja) * 2019-01-31 2020-08-13 キヤノン株式会社 計測装置、露光装置及び物品の製造方法
JP7278828B2 (ja) * 2019-03-26 2023-05-22 キヤノン株式会社 成形方法、成形装置、インプリント方法、および物品の製造方法
DE102019206316A1 (de) * 2019-05-03 2020-11-05 Robert Bosch Gmbh Optisches System, insbesondere LiDAR-System, und Fahrzeug
KR102273278B1 (ko) * 2019-09-10 2021-07-07 (주)오로스 테크놀로지 오버레이 측정장치
JP7356667B2 (ja) * 2019-10-25 2023-10-05 国立大学法人秋田大学 位置合わせ装置
US11784077B2 (en) 2019-12-18 2023-10-10 Micron Technology, Inc. Wafer overlay marks, overlay measurement systems, and related methods
WO2021133436A1 (en) * 2019-12-26 2021-07-01 Zeng An Andrew Tool architecture for wafer geometry measurement in semiconductor industry
JP7446131B2 (ja) * 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
KR102461662B1 (ko) * 2020-07-02 2022-11-02 (주)오로스 테크놀로지 오버레이 측정장치
JP7536571B2 (ja) * 2020-09-15 2024-08-20 キオクシア株式会社 位置計測装置及び計測方法
CN112908898B (zh) * 2021-01-27 2022-09-02 长鑫存储技术有限公司 控片量测方法及量测装置
TWI804401B (zh) 2022-07-28 2023-06-01 國立成功大學 光學量測系統
CN117517302A (zh) * 2022-07-28 2024-02-06 刘建圣 光学量测系统

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5628245B2 (enExample) * 1975-03-19 1981-06-30
JPS6165433A (ja) * 1984-09-07 1986-04-04 Canon Inc 対物レンズの物体位置検出装置
JPS61219045A (ja) * 1985-03-25 1986-09-29 Canon Inc 距離算出装置および自動焦点合わせ装置
JPS6216526A (ja) 1985-07-15 1987-01-24 Canon Inc 投影露光装置及びそれを用いたデバイス製造方法
US5114223A (en) 1985-07-15 1992-05-19 Canon Kabushiki Kaisha Exposure method and apparatus
JPH06165433A (ja) 1992-11-20 1994-06-10 Toshiba Corp モータ
JP2000294499A (ja) 1999-04-09 2000-10-20 Mitsubishi Electric Corp 重ね合わせ精度向上方法および重ね合わせずれ量測定装置
US6768539B2 (en) * 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
JP3542346B2 (ja) * 2001-12-18 2004-07-14 帝眞貿易株式会社 薄膜の膜厚測定方法及びその測定装置
TW594431B (en) 2002-03-01 2004-06-21 Asml Netherlands Bv Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
JP2005005444A (ja) * 2003-06-11 2005-01-06 Nikon Corp アライメント装置、露光装置、アライメント方法、露光方法及び位置情報検出方法
JP2006242722A (ja) * 2005-03-02 2006-09-14 Nikon Corp 位置計測方法、この位置計測方法を実施する位置計測装置、この位置計測方法を使用するデバイス製造方法、及びこの位置計測装置を装備する露光装置
JP2007242707A (ja) * 2006-03-06 2007-09-20 Nikon Corp 計測装置、パターン形成装置及びリソグラフィ装置
JP5018004B2 (ja) 2006-10-11 2012-09-05 株式会社ニコン 顕微鏡、マーク検出方法、ウェハ接合装置、および、積層３次元半導体装置の製造方法
JP5013921B2 (ja) 2007-03-29 2012-08-29 キヤノン株式会社 収差計測方法、露光装置及びデバイス製造方法
JP4939304B2 (ja) * 2007-05-24 2012-05-23 東レエンジニアリング株式会社 透明膜の膜厚測定方法およびその装置
NL1036179A1 (nl) 2007-11-20 2009-05-25 Asml Netherlands Bv Lithographic apparatus and method.
JP5406624B2 (ja) 2009-08-10 2014-02-05 キヤノン株式会社 検出装置、露光装置及びデバイスの製造方法
JP5490462B2 (ja) * 2009-08-17 2014-05-14 横河電機株式会社 膜厚測定装置
CN102253603B (zh) 2010-05-21 2013-05-22 上海微电子装备有限公司 一种用于光刻设备的对准探测装置
JP5162006B2 (ja) 2011-06-01 2013-03-13 キヤノン株式会社 検出装置、露光装置、および、デバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11067908B2 (en) 2019-02-14 2021-07-20 Canon Kabushiki Kaisha Measurement apparatus, exposure apparatus, and method of manufacturing article

Also Published As

Publication number Publication date
US9523927B2 (en) 2016-12-20
CN103309169A (zh) 2013-09-18
KR20130101458A (ko) 2013-09-13
CN103309169B (zh) 2016-03-02
US20130230798A1 (en) 2013-09-05
JP2013187206A (ja) 2013-09-19

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