JP6022936B2 - 複合磁気シールドを有する磁気センサ - Google Patents

複合磁気シールドを有する磁気センサ Download PDF

Info

Publication number
JP6022936B2
JP6022936B2 JP2012519709A JP2012519709A JP6022936B2 JP 6022936 B2 JP6022936 B2 JP 6022936B2 JP 2012519709 A JP2012519709 A JP 2012519709A JP 2012519709 A JP2012519709 A JP 2012519709A JP 6022936 B2 JP6022936 B2 JP 6022936B2
Authority
JP
Japan
Prior art keywords
magnetic
layer
shield
shield element
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012519709A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012533141A (ja
JP2012533141A5 (enExample
Inventor
バスコ，ブラディスラフ・アレクサンドロビチ
イントゥリ，ベンカテスワラ・ラオ
カウツキー，マイケル・シィ
ルー，チホン
キーフ，マーク・ティ
チャン，イーファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2012533141A publication Critical patent/JP2012533141A/ja
Publication of JP2012533141A5 publication Critical patent/JP2012533141A5/ja
Application granted granted Critical
Publication of JP6022936B2 publication Critical patent/JP6022936B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
JP2012519709A 2009-07-08 2010-07-08 複合磁気シールドを有する磁気センサ Expired - Fee Related JP6022936B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/499,157 2009-07-08
US12/499,157 US8437105B2 (en) 2009-07-08 2009-07-08 Magnetic sensor with composite magnetic shield
PCT/US2010/041285 WO2011005914A1 (en) 2009-07-08 2010-07-08 Magnetic sensor with composite magnetic shield

Publications (3)

Publication Number Publication Date
JP2012533141A JP2012533141A (ja) 2012-12-20
JP2012533141A5 JP2012533141A5 (enExample) 2013-05-02
JP6022936B2 true JP6022936B2 (ja) 2016-11-09

Family

ID=43064561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012519709A Expired - Fee Related JP6022936B2 (ja) 2009-07-08 2010-07-08 複合磁気シールドを有する磁気センサ

Country Status (5)

Country Link
US (2) US8437105B2 (enExample)
JP (1) JP6022936B2 (enExample)
KR (1) KR101389487B1 (enExample)
CN (1) CN102483931B (enExample)
WO (1) WO2011005914A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8611055B1 (en) * 2009-07-31 2013-12-17 Western Digital (Fremont), Llc Magnetic etch-stop layer for magnetoresistive read heads
US8771847B2 (en) 2011-10-14 2014-07-08 Seagate Technology Reader stop-layers
EP2833542B1 (en) * 2012-03-30 2019-01-16 National Institute of Advanced Industrial Science and Technology Actuator element using carbon electrode
JP2013254547A (ja) * 2012-06-08 2013-12-19 Hitachi Ltd マイクロ波アシスト記録用磁気ヘッド及び磁気記録再生装置
US9183857B2 (en) * 2012-11-01 2015-11-10 Seagate Technology Llc Magnetic devices having shields including a nickel alloy
US8531801B1 (en) 2012-12-20 2013-09-10 Western Digital (Fremont), Llc Method and system for providing a read transducer having a composite magnetic shield with smooth interfaces
US20140254047A1 (en) * 2013-03-08 2014-09-11 Seagate Technology Llc Reader with decoupled magnetic seed layer
JP6122353B2 (ja) * 2013-06-25 2017-04-26 ルネサスエレクトロニクス株式会社 半導体パッケージ
US9478239B2 (en) * 2013-06-27 2016-10-25 Seagate Technology Llc Reader structure with barrier layer contacting shield
US9691417B1 (en) 2013-06-28 2017-06-27 Seagate Technology Llc Magnetoresistive sensor having a synthetic antiferromagnetic bottom shield
US9251815B2 (en) * 2013-06-28 2016-02-02 Seagate Technology Llc Magnetoresistive sensor with AFM-stabilized bottom shield
US9190082B2 (en) * 2013-08-28 2015-11-17 Seagate Technology, Llc Dual reader structure
KR101476932B1 (ko) * 2013-11-20 2014-12-26 한양대학교 산학협력단 수직 자기 이방성을 갖는 mtj 구조, 이의 제조방법 및 이를 포함하는 자성소자
US9368136B2 (en) * 2014-02-27 2016-06-14 Seagate Technology Llc Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields
US9412401B2 (en) 2014-05-13 2016-08-09 Seagate Technology Llc Data reader magnetic shield with CoFeNiB material
US9230565B1 (en) 2014-06-24 2016-01-05 Western Digital (Fremont), Llc Magnetic shield for magnetic recording head
US9454979B1 (en) 2014-11-14 2016-09-27 Seagate Technology Llc Sensor structure with multilayer top shield
US10074387B1 (en) 2014-12-21 2018-09-11 Western Digital (Fremont), Llc Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields
US11307055B2 (en) * 2019-09-18 2022-04-19 Analog Devices International Unlimited Company Sensor with magnetic shield
US11754646B2 (en) 2021-03-24 2023-09-12 Analog Devices International Unlimited Company Magnetic sensor system
CN115798522B (zh) * 2021-09-09 2025-10-10 西部数据技术公司 具有稳定上读取器的磁性读取传感器及相关方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447839A (en) * 1980-10-28 1984-05-08 Compagnie Internationale Pour L'informatique Cii-Honeywell Bull (Societe Anonyme) Magnetoresistant transducer
JP2731506B2 (ja) 1993-11-22 1998-03-25 富士通株式会社 磁気抵抗効果型磁気ヘッド及びその製造方法
US5515221A (en) 1994-12-30 1996-05-07 International Business Machines Corporation Magnetically stable shields for MR head
US5838521A (en) * 1995-04-17 1998-11-17 Read-Rite Corporation Magnetoresistive transducer having laminated magnetic shields
JPH09128712A (ja) 1995-10-27 1997-05-16 Victor Co Of Japan Ltd 磁気抵抗効果型ヘッド
US20010029158A1 (en) * 1998-07-30 2001-10-11 Yoshitaka Sasaki Polishing apparatus and polishing method, and method of manufacturing semiconductor device and method of manufacturing thin film magnetic head
JP2000048327A (ja) * 1998-07-31 2000-02-18 Alps Electric Co Ltd 薄膜磁気ヘッド
US6807031B2 (en) * 2000-02-08 2004-10-19 Seagate Technology Llc Single domain state laminated thin film structure for use as a magnetic layer of a transducing head
US6437949B1 (en) 2000-02-08 2002-08-20 Seagate Technology Llc Single domain state laminated thin film structure
US7180712B1 (en) * 2000-02-28 2007-02-20 Headway Technologies, Inc. Shield structure design to improve the stability of an MR head
US6456467B1 (en) * 2000-03-31 2002-09-24 Seagate Technology Llc Laminated shields with antiparallel magnetizations
US6767655B2 (en) * 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
JP3659898B2 (ja) * 2000-11-27 2005-06-15 Ｔｄｋ株式会社 薄膜磁気ヘッドおよびその製造方法
US6496335B2 (en) * 2000-11-29 2002-12-17 International Business Machines Corporation Magnetic head shield structure having high magnetic stability
JP3600545B2 (ja) * 2001-04-02 2004-12-15 アルプス電気株式会社 薄膜磁気ヘッド
US6775108B2 (en) * 2001-11-02 2004-08-10 Seagate Technology Llc Magnetic head having a read element shield and substrate with matching coefficients of thermal expansion
US7236333B2 (en) 2003-12-11 2007-06-26 Seagate Technology Llc Domain wall free shields of MR sensors
US7340824B2 (en) * 2004-06-30 2008-03-11 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating a magnetic head having an improved magnetic shield
US7270896B2 (en) * 2004-07-02 2007-09-18 International Business Machines Corporation High performance magnetic tunnel barriers with amorphous materials
US7369360B2 (en) 2004-11-05 2008-05-06 Seagate Technology Llc Perpendicular recording head having controlled permeability and saturation moment
JP2007242786A (ja) 2006-03-07 2007-09-20 Tdk Corp Ｃｐｐ型磁気抵抗効果素子
JP4121035B2 (ja) 2006-04-14 2008-07-16 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
US7697244B2 (en) 2006-06-12 2010-04-13 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head with stabilized ferromagnetic shield
JP2008010509A (ja) * 2006-06-27 2008-01-17 Fujitsu Ltd 磁気抵抗効果素子及び磁気ディスク装置
US7920363B2 (en) * 2006-12-22 2011-04-05 Hitachi Global Storage Technologies Netherlands B.V. TMR sensor having magnesium/magnesium oxide tunnel barrier
US7796364B2 (en) 2006-12-29 2010-09-14 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield
WO2008139513A1 (ja) * 2007-04-27 2008-11-20 Fujitsu Limited 磁極幅測定方法

Also Published As

Publication number Publication date
US20130233823A1 (en) 2013-09-12
KR101389487B1 (ko) 2014-04-28
CN102483931A (zh) 2012-05-30
CN102483931B (zh) 2015-04-01
JP2012533141A (ja) 2012-12-20
WO2011005914A1 (en) 2011-01-13
US8945405B2 (en) 2015-02-03
KR20120045012A (ko) 2012-05-08
US8437105B2 (en) 2013-05-07
US20110007425A1 (en) 2011-01-13

Similar Documents

Publication Publication Date Title
JP6022936B2 (ja) 複合磁気シールドを有する磁気センサ
US8077435B1 (en) Current perpendicular-to-plane read sensor with back shield
US6947264B2 (en) Self-pinned in-stack bias structure for magnetoresistive read heads
US8873204B1 (en) Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer
JP5191652B2 (ja) 感知向上層（ｓｅｎｓｅｅｎｈａｎｃｉｎｇｌａｙｅｒ）を含む磁気感知デバイス
US6600638B2 (en) Corrosion resistive GMR and MTJ sensors
US9177575B1 (en) Tunneling magnetoresistive (TMR) read head with reduced gap thickness
JP5750211B2 (ja) Ｔｍｒ素子およびその形成方法
CN101183704B (zh) 隧道磁阻器件、其制造方法、磁头及磁存储器
KR101789589B1 (ko) 센서 스택 구조
JP5383145B2 (ja) 磁気再生ヘッド
EP3347927A1 (en) Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
JP2011023096A (ja) トンネル磁気抵抗再生素子
JP2016071925A (ja) ＭｇＯトンネル型バリア層およびホウ素の拡散を最少化する窒素含有層を含むトンネル型磁気抵抗（ＴＭＲ）素子
CN102737649A (zh) 磁阻传感器结构及电流垂直于平面型磁阻读头
US10090008B2 (en) Magnetoresistive sensor fabrication
JP2015015068A (ja) 結晶性ＣｏＦｅＸ層およびホイスラー型合金層を含む、多重層からなる基準層を含む平面垂直通電型（ＣＰＰ）磁気抵抗センサ
CN104810026A (zh) 一种读头传感器
US7746603B2 (en) CPP Magnetoresistive head with different thickness free layers for improved signal to noise ratio
CN101473372A (zh) 磁头
US20160307587A1 (en) Underlayer for reference layer of polycrystalline cpp gmr sensor stack
CN101330125A (zh) 磁阻效应元件、磁头、以及磁读取装置
US9087525B2 (en) Layered synthetic anti-ferromagnetic upper shield
US8852963B2 (en) Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor having a low-coercivity reference layer
US8091209B1 (en) Magnetic sensing device including a sense enhancing layer

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130312

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130312

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140610

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141202

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160404

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160502

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160603

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160705

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161006

R150 Certificate of patent or registration of utility model

Ref document number: 6022936

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees