Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/127—Structure or manufacture of heads, e.g. inductive
  • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
  • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
  • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
  • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
  • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/127—Structure or manufacture of heads, e.g. inductive
  • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
  • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/127—Structure or manufacture of heads, e.g. inductive
  • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
  • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
  • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
  • G11B5/398—Specially shaped layers

Definitions

• a magnetic recording head can include a reader portion having a sensor for retrieving magnetically encoded information stored on a magnetic medium.
• Magnetic flux from the surface of the medium causes rotation of the magnetization vector of a sensing layer or layers of the sensor, which in turn causes a change in the electrical properties of the sensor.
• the sensing layers are often called free layers, since the magnetization vectors of the sensing layers are free to rotate in response to external magnetic flux.
• the change in the electrical properties of the sensor may be detected by passing a current through the sensor and measuring a voltage across the sensor.
• the sense current may be passed in the plane (CIP) of the layers of the device or perpendicular to the plane (CPP) of the layers of the device.
• External circuitry then converts the voltage information into an appropriate format and manipulates that information as necessary to recover information encoded on the disc.
• a structure in contemporary magnetic read heads is a thin film multilayer structure containing ferromagnetic material that exhibits some type of magnetoresistance.
• One magnetoresistive sensor configuration includes a multilayered structure formed of a nonmagnetic layer (such as a thin insulating barrier layer or a nonmagnetic metal) positioned between a synthetic antiferromagnet (SAF) and a ferromagnetic free layer, or between two ferromagnetic free layers.
• SAF synthetic antiferromagnet
• the resistance of the magnetic sensor depends on the relative orientations of the magnetization of the magnetic layers.
• Magnetic read sensors have magnetic shields that to increase the spatial resolution of the read sensor by shielding the read sensor from stray magnetic fields. It is important that the magnetic domain configuration of the magnetic shield and its response to small magnetic fields from recording media be stable against exposure to large and nonuniform magnetic fields in order to minimize unwanted noise registered in the read sensor.
• the magnetic domain configuration can be established by controlling the magnetic anisotropy of the ferromagnetic shield material.
• processing of the read sensor can require that the shield be exposed to strong magnetic fields at elevated temperatures that can reorient (e.g., cause magnetic grain growth) the magnetic anisotropy of the magnetic shield in an unfavorable way.
• the present disclosure relates to a magnetic sensor with a composite magnetic shield.
• the present disclosure can improve the areal density capabilities of various types of magneto resistive (MR) readers.
• the composite first magnetic shield provides stable anisotropy at elevated magnetic set and cross anneal temperatures.
• a magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a tunneling magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element.
• the first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer.
• the magneto-resistive reader can be a tunneling magneto-resistive reader with a TMR ratio of 100 % or greater.
• FIG. 1 is a front surface view of a reader including a free layer assembly having a perpendicular to the plane anisotropy and side shields;
• FIG. 2A is layer schematic diagram of an illustrative composite shield
• FIG. 2B is a layer schematic diagram of another illustrative composite shield
• FIG. 3A-3C are layer schematic diagrams illustrating the method of forming an illustrative reader
• FIG. 4 is a flow diagram of an illustrative method of forming an illustrative reader
• FIG. 5A-5D are layer schematic diagrams illustrating the method of forming an illustrative shield element.
• FIG. 6 is a flow diagram of an illustrative method of forming an illustrative shield element.
• the present disclosure relates to a magnetic sensor with a composite magnetic shield.
• the composite magnetic shield provides stable anisotropy at elevated magnetic set anneal and cross temperatures.
• the composite magnetic shield includes two ferromagnetic layers separated by a grain growth suppression layer.
• the grain growth suppression layer inhibits structural changes in the ferromagnetic layers and stabilizes the anisotropic magnetic domain structure of the shield during a high temperature anneal. While the present disclosure is not so limited, an appreciation of various aspects of the disclosure will be gained through a discussion of the examples provided below.
• FIG. 1 is a front surface view of a magneto-resistive (MR) reader 10 including a composite first shield 24 in some embodiments the magneto-resistive (MR) reader is a tunneling magneto-resistive (TMR) reader.
• the tunneling magneto-resistive (TMR) reader 10 includes a sensor stack 12 separating a second magnetic shield 14 from a first composite magnetic shield 24.
• the sensor stack 12 includes a reference magnetic element 34 having a reference magnetization orientation M R direction a free magnetic element 30 having a free magnetization orientation M F direction substantially perpendicular (and in-plane) to the reference magnetization orientation M R direction, and a non-magnetic spacer 32 layer separating the reference magnetic element 34 from the free magnetic element 30.
• FIG. 1 illustrates a free magnetic element 30 having magnetization orientation M F direction substantially perpendicular to the reference magnetization orientation M R direction, it is understood that the free magnetization orientation M F direction can be substantially parallel or anti-parallel to the reference magnetization orientation M R direction.
• Electrically insulating layer 19, 21 electrically insulates the second magnetic shield 14 from a first composite magnetic shield 24.
• free magnetic element 30 is on the top of sensor stack 12 and reference magnetic element 34 is on the bottom of sensor stack 12. It will be appreciated that sensor stack 12 may alternatively include reference magnetic element 34 on the top of sensor stack 12 and free magnetic element 30 on the bottom of sensor stack 12.
• Free magnetic element 30 is a single or a composite or multiple layer structure having a magnetization M F that rotates in response to an external magnetic field.
• the sensor stack 12 senses magnetic flux from a magnetic media.
• the sensor stack 12 is a tunneling magneto resistive type (TMR) sensor where the reference magnetic element 34 and the free magnetic element 30 are ferromagnetic layers separated by an insulating spacer layer 32 that is thin enough (e.g., 1 to 5 nanometers thick) to allow electrons to tunnel from one ferromagnetic layer to the other ferromagnetic layer.
• Spacer layer 32 is a nonmagnetic insulting layer disposed between free magnetic element 30 and reference magnetic element 34.
• spacer layer 32 is a non-magnetic, insulative or semi-conductive material, such as oxides formed of Mg, Al, Hf, or Ti. In some embodiments the spacer layer 32 is MgO.
• Reference magnetic element 34 has a fixed magnetization direction M R that is in-plane with the layer or layers of magnetic element 34. Magnetization direction M F of free magnetic element 30 is either perpendicular to fixed magnetization direction M R in a quiescent state or parallel or anti-parallel to fixed magnetization direction M R in a quiescent state. Reference magnetic element 34 may be a single ferromagnetic layer having an anisotropically defined magnetization direction.
• Reference magnetic element 34 may also include various combinations of layers to provide magnetization M R having a fixed direction, such as a ferromagnetic pinned layer with an antiferromagnetic pinning layer, a synthetic ferromagnetic pinned layer (i.e., two ferromagnetic layers coupled by a nonmagnetic metal, such as Ru), or a synthetic ferromagnetic pinned layer coupled to an antiferromagnetic pinning layer.
• Ferromagnetic layers of reference layer assembly 34 may be made of a ferromagnetic alloy, such as CoFe, NiFe, or NiFeCo, and the antiferromagnetic layer may be made of PtMn, IrMn, NiMn, or FeMn.
• a sense current is passed through sensor stack 12 via shields 14 and 24 (which can also function as electronic leads in some embodiments) such that the sense current passes perpendicular to the plane of the layer or layers of sensor stack 12.
• shields 14 and 24 which can also function as electronic leads in some embodiments
• the resistance of sensor stack 12 changes as a function of the angle between magnetizations M F and M R .
• the voltage across sensor stack 12 is measured between leads/shields 14 and 24 by external circuitry (not shown) to detect changes in resistance of sensor stack 12.
• Tunneling magneto resistive type sensor stack 12 design has shown that higher annealing temperatures such as, 300 degrees centigrade or greater, or 340 degrees centigrade or greater, or 390 degrees centigrade or greater, for example, improves the TMR ratio % of the sensor stack 12.
• the high temperature anneals can produce a tunneling magneto resistive type sensor stack 12 having a TMR ratio of 100% or greater, or 200% or greater, or 300% or greater.
• the TMR (tunneling magneto- resistive) ratio % is derived from the following equation (1):
• TMR ratio (%) (Rmax-Rmin)/Rmax x 100 ( 1 )
• Rmax and Rmin are the resistance values obtained when applying a current through the sensor stack in a parallel (low resistance state) and anti-parallel (high resistance state).
• Increasing the TMR ratio improves the sensor stack sensitivity and reliability.
• the composite first shield 24 Since the tunneling magneto resistive type sensor stack 12 is deposited on the composite first shield 24, the composite first shield 24 has to provide stable anisotropy at the higher anneal temperatures that are needed to provide the sensor stack 12 that possess a higher TMR ratio percentage.
• the composite first shield 24 described herein provides stable anisotropy at the higher anneal temperatures.
• the composite first shield 24 includes two ferromagnetic anisotropic layers 26, 27 separated by a grain growth suppression layer 25.
• the grain growth suppression layer 25 inhibits diffusion, defect mobility, and grain crystallization during magnetic annealing of the magneto-resistive reader 10.
• the grain growth suppression layer 25 has a thickness of less than 100 Angstroms or 50 Angstroms or less, or a thickness in a range from 5 to 50 Angstroms.
• the overall thickness of the composite first shield 24 is about one micrometer and in many embodiments the thickness of each of the two ferromagnetic anisotropic layers 26, 27 is about equal.
• the grain growth suppression layer 25 is non-magnetic. In some embodiments the grain growth suppression layer 25 is magnetic. In illustrative embodiments, the grain growth suppression layer 25 is Ru, Ta, Nb, Zr, or Hf and the two ferromagnetic anisotropic layers 26, 27 are NiFe. In many embodiments, the grain growth suppression layer 25 is Ru or Ta and the two ferromagnetic anisotropic layers 26, 27 are NiFe.
• FIG. 2A is layer schematic diagram of an illustrative composite first shield 24.
• the composite first shield 24 includes two ferromagnetic anisotropic layers 26, 27 separated by a grain growth suppression layer 25, as described above.
• the grain growth suppression layer 25 is non-magnetic.
• the grain growth suppression layer 25 is magnetic.
• the composite first shield 24 can further include an optional hard magnetic layer 28.
• the hard magnetic layer 28 can be formed of any useful magnetic material that has an ability to magnetically couple to the bottom of the composite shield layers and have a magnetic coercivity high enough to withstand magnetization reversal from media and stray fields during operation.
• FIG. 2B is a layer schematic diagram of another illustrative composite first shield 24.
• the composite first shield 24 includes three ferromagnetic anisotropic layers 26, 27, 23 separated by grain growth suppression layers 25, 29, as described above.
• the grain growth suppression layer 25, 29 is non-magnetic.
• the grain growth suppression layer 25, 29 is magnetic.
• the composite first shield 24 further can include a hard magnetic layer like in FIG. 2A.
• the hard magnetic layer 28 can be formed of any useful magnetic material.
• FIG. 3A-3C are layer schematic diagrams illustrating the method of forming an illustrative tunneling magneto-resistive (TMR) reader 10.
• FIG. 4 is a flow diagram of an illustrative method of forming an illustrative tunneling magneto-resistive (TMR) reader.
• the method includes depositing a first shield element 24 on a substrate 5.
• the first shield element 24 can be sputter deposited using semiconductor fabrication techniques.
• the first shield element 24 includes two ferromagnetic anisotropic layers 27, 26 separated by a grain growth suppression layer 25 at block 101.
• the first shield element 24 is described above.
• the method includes annealing the first shield element 24 at a magnetic set anneal temperature to form a set annealed first shield at block 102.
• a magnetic field is applied to the first shield element 24 at an elevated temperature to set the magnetic orientation of the at least one ferromagnetic layer 27, 26 of the first shield element 24.
• the magnetic set anneal temperature is greater than 350 degrees centigrade, or greater than 390 degrees centigrade, or greater than 440 degrees centigrade.
• the grain growth suppression layer 25 inhibits grain growth and improves the anisotropy of the first shield element 24.
• the method includes depositing a tunneling magneto-resistive sensor stack 12 on the annealed first shield 24 at block 103
• the tunneling magneto-resistive sensor stack 12 includes a reference magnetic element 34, a free magnetic element 30, and a nonmagnetic spacer 32 layer separating the reference magnetic element 34 from the free magnetic element 30.
• the tunneling magneto-resistive sensor stack 12 is described above and can be sputter deposited using semiconductor fabrication techniques.
• the tunneling magneto-resistive sensor stack 12 is annealed at a magnetic cross set anneal temperature to form a cross set annealed tunneling magneto-resistive sensor stack at block 104.
• a magnetic field is applied to the tunneling magneto-resistive sensor stack 12 at an elevated temperature to set the magnetic orientation of the at least one ferromagnetic layer 30, 34 of the tunneling magneto-resistive sensor stack 12.
• the cross set magnetic field is perpendicular to the magnetic set magnetic field.
• the magnetic cross set anneal temperature is below the set annealing temperature of the first shield element 24 so as not disturb the magnetic orientation of the first shield element 24 and above the blocking temperature of the antiferromagnet in the stack so the reference layer is pinned when it cools after annealing. In many embodiments, the magnetic cross set anneal temperature is greater than 350 degrees centigrade, or greater than 390 degrees centigrade.
• a second shield element 14 is then deposited on the cross set annealed tunneling magneto-resistive sensor stack 12 at block 105, to form the tunneling magneto-resistive (TMR) reader 10.
• FIG. 5A-5D are layer schematic diagrams illustrating the method of forming an illustrative first shield element.
• FIG. 6 is a flow diagram of an illustrative method of forming an illustrative first shield element. The method includes depositing a first shield element 24. The first shield element 24 including two ferromagnetic anisotropic layers 27, 26 separated by a grain growth suppression layer 25, and annealing the first shield element 24 to form a set annealed first shield, as described above. An exposed surface of the first shield element 24 is then polished to form a smooth exposed first shield surface, utilizing semiconductor fabrication techniques. The polishing step removes a minor amount of layer being polished. For example, the polishing step removes less than 2% or less than 1% of the ferromagnetic layer being polished.
• the structure of the first shield element 24 can be defined by any useful method, such as patterning by photolithography and then etching, for example.
• the patterning can be preformed following the deposing step of bock 201.
• the resulting structure is described as a patterned first shield element 24 below.
• a chemical mechanical polishing (CMP) stop layer 50 is then deposited on the smooth exposed first shield surface at block 201.
• the CMP stop layer 50 can be any useful CMP stop material such as chromium or a-carbon, for example.
• this structure is then patterned to form the desired first shield element dimensions, utilizing semiconductor fabrication techniques.
• a chemical mechanical polishing (CMP) stop layer 50 is not deposited.
• An insulating material 60 is deposited about the patterned first shield element 24 at block 202.
• the insulating material can be any useful electrically insulating material such as metal oxides or semiconductor oxides, for example.
• the insulating material 60 can encapsulate the patterned first shield element 24.
• the method includes removing insulating material 60 by chemical mechanical polishing down to the chemical mechanical polishing stop layer 50 at block 203.
• the CMP method step forms a planar surface of insulating regions and CMP stop layer regions.
• the chemical mechanical polishing stop layer 50 is removed at bock 204.
• the sensor stack can be deposited on smooth exposed surface of the first shield element as described above.
• This method provides layer thickness control of the top ferromagnetic layer of the composite first shield. Very little of the top ferromagnetic layer is removed during the CMP process and the smooth polish method step provides a smooth surface for depositing the sensor stack and improves the sensor stack uniformity during deposition.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Magnetic Heads (AREA)
• Hall/Mr Elements (AREA)

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• 2009
  • 2009-07-08 US US12/499,157 patent/US8437105B2/en active Active
• 2010
  • 2010-07-08 CN CN201080031224.9A patent/CN102483931B/zh not_active Expired - Fee Related
  • 2010-07-08 JP JP2012519709A patent/JP6022936B2/ja not_active Expired - Fee Related
  • 2010-07-08 KR KR1020127003433A patent/KR101389487B1/ko not_active Expired - Fee Related
  • 2010-07-08 WO PCT/US2010/041285 patent/WO2011005914A1/en not_active Ceased
• 2013
  • 2013-04-23 US US13/868,515 patent/US8945405B2/en active Active

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