JP2012533141A5 - - Google Patents

Download PDF

Info

Publication number
JP2012533141A5
JP2012533141A5 JP2012519709A JP2012519709A JP2012533141A5 JP 2012533141 A5 JP2012533141 A5 JP 2012533141A5 JP 2012519709 A JP2012519709 A JP 2012519709A JP 2012519709 A JP2012519709 A JP 2012519709A JP 2012533141 A5 JP2012533141 A5 JP 2012533141A5
Authority
JP
Japan
Prior art keywords
magnetic
layer
shield element
magnetoresistive
grain growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012519709A
Other languages
English (en)
Japanese (ja)
Other versions
JP6022936B2 (ja
JP2012533141A (ja
Filing date
Publication date
Priority claimed from US12/499,157 external-priority patent/US8437105B2/en
Application filed filed Critical
Publication of JP2012533141A publication Critical patent/JP2012533141A/ja
Publication of JP2012533141A5 publication Critical patent/JP2012533141A5/ja
Application granted granted Critical
Publication of JP6022936B2 publication Critical patent/JP6022936B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012519709A 2009-07-08 2010-07-08 複合磁気シールドを有する磁気センサ Expired - Fee Related JP6022936B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/499,157 2009-07-08
US12/499,157 US8437105B2 (en) 2009-07-08 2009-07-08 Magnetic sensor with composite magnetic shield
PCT/US2010/041285 WO2011005914A1 (en) 2009-07-08 2010-07-08 Magnetic sensor with composite magnetic shield

Publications (3)

Publication Number Publication Date
JP2012533141A JP2012533141A (ja) 2012-12-20
JP2012533141A5 true JP2012533141A5 (enExample) 2013-05-02
JP6022936B2 JP6022936B2 (ja) 2016-11-09

Family

ID=43064561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012519709A Expired - Fee Related JP6022936B2 (ja) 2009-07-08 2010-07-08 複合磁気シールドを有する磁気センサ

Country Status (5)

Country Link
US (2) US8437105B2 (enExample)
JP (1) JP6022936B2 (enExample)
KR (1) KR101389487B1 (enExample)
CN (1) CN102483931B (enExample)
WO (1) WO2011005914A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8611055B1 (en) * 2009-07-31 2013-12-17 Western Digital (Fremont), Llc Magnetic etch-stop layer for magnetoresistive read heads
US8771847B2 (en) 2011-10-14 2014-07-08 Seagate Technology Reader stop-layers
EP2833542B1 (en) * 2012-03-30 2019-01-16 National Institute of Advanced Industrial Science and Technology Actuator element using carbon electrode
JP2013254547A (ja) * 2012-06-08 2013-12-19 Hitachi Ltd マイクロ波アシスト記録用磁気ヘッド及び磁気記録再生装置
US9183857B2 (en) * 2012-11-01 2015-11-10 Seagate Technology Llc Magnetic devices having shields including a nickel alloy
US8531801B1 (en) 2012-12-20 2013-09-10 Western Digital (Fremont), Llc Method and system for providing a read transducer having a composite magnetic shield with smooth interfaces
US20140254047A1 (en) * 2013-03-08 2014-09-11 Seagate Technology Llc Reader with decoupled magnetic seed layer
JP6122353B2 (ja) * 2013-06-25 2017-04-26 ルネサスエレクトロニクス株式会社 半導体パッケージ
US9478239B2 (en) * 2013-06-27 2016-10-25 Seagate Technology Llc Reader structure with barrier layer contacting shield
US9691417B1 (en) 2013-06-28 2017-06-27 Seagate Technology Llc Magnetoresistive sensor having a synthetic antiferromagnetic bottom shield
US9251815B2 (en) * 2013-06-28 2016-02-02 Seagate Technology Llc Magnetoresistive sensor with AFM-stabilized bottom shield
US9190082B2 (en) * 2013-08-28 2015-11-17 Seagate Technology, Llc Dual reader structure
KR101476932B1 (ko) * 2013-11-20 2014-12-26 한양대학교 산학협력단 수직 자기 이방성을 갖는 mtj 구조, 이의 제조방법 및 이를 포함하는 자성소자
US9368136B2 (en) * 2014-02-27 2016-06-14 Seagate Technology Llc Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields
US9412401B2 (en) 2014-05-13 2016-08-09 Seagate Technology Llc Data reader magnetic shield with CoFeNiB material
US9230565B1 (en) 2014-06-24 2016-01-05 Western Digital (Fremont), Llc Magnetic shield for magnetic recording head
US9454979B1 (en) 2014-11-14 2016-09-27 Seagate Technology Llc Sensor structure with multilayer top shield
US10074387B1 (en) 2014-12-21 2018-09-11 Western Digital (Fremont), Llc Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields
US11307055B2 (en) * 2019-09-18 2022-04-19 Analog Devices International Unlimited Company Sensor with magnetic shield
US11754646B2 (en) 2021-03-24 2023-09-12 Analog Devices International Unlimited Company Magnetic sensor system
CN115798522B (zh) * 2021-09-09 2025-10-10 西部数据技术公司 具有稳定上读取器的磁性读取传感器及相关方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447839A (en) * 1980-10-28 1984-05-08 Compagnie Internationale Pour L'informatique Cii-Honeywell Bull (Societe Anonyme) Magnetoresistant transducer
JP2731506B2 (ja) 1993-11-22 1998-03-25 富士通株式会社 磁気抵抗効果型磁気ヘッド及びその製造方法
US5515221A (en) 1994-12-30 1996-05-07 International Business Machines Corporation Magnetically stable shields for MR head
US5838521A (en) * 1995-04-17 1998-11-17 Read-Rite Corporation Magnetoresistive transducer having laminated magnetic shields
JPH09128712A (ja) 1995-10-27 1997-05-16 Victor Co Of Japan Ltd 磁気抵抗効果型ヘッド
US20010029158A1 (en) * 1998-07-30 2001-10-11 Yoshitaka Sasaki Polishing apparatus and polishing method, and method of manufacturing semiconductor device and method of manufacturing thin film magnetic head
JP2000048327A (ja) * 1998-07-31 2000-02-18 Alps Electric Co Ltd 薄膜磁気ヘッド
US6807031B2 (en) * 2000-02-08 2004-10-19 Seagate Technology Llc Single domain state laminated thin film structure for use as a magnetic layer of a transducing head
US6437949B1 (en) 2000-02-08 2002-08-20 Seagate Technology Llc Single domain state laminated thin film structure
US7180712B1 (en) * 2000-02-28 2007-02-20 Headway Technologies, Inc. Shield structure design to improve the stability of an MR head
US6456467B1 (en) * 2000-03-31 2002-09-24 Seagate Technology Llc Laminated shields with antiparallel magnetizations
US6767655B2 (en) * 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
JP3659898B2 (ja) * 2000-11-27 2005-06-15 Ｔｄｋ株式会社 薄膜磁気ヘッドおよびその製造方法
US6496335B2 (en) * 2000-11-29 2002-12-17 International Business Machines Corporation Magnetic head shield structure having high magnetic stability
JP3600545B2 (ja) * 2001-04-02 2004-12-15 アルプス電気株式会社 薄膜磁気ヘッド
US6775108B2 (en) * 2001-11-02 2004-08-10 Seagate Technology Llc Magnetic head having a read element shield and substrate with matching coefficients of thermal expansion
US7236333B2 (en) 2003-12-11 2007-06-26 Seagate Technology Llc Domain wall free shields of MR sensors
US7340824B2 (en) * 2004-06-30 2008-03-11 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating a magnetic head having an improved magnetic shield
US7270896B2 (en) * 2004-07-02 2007-09-18 International Business Machines Corporation High performance magnetic tunnel barriers with amorphous materials
US7369360B2 (en) 2004-11-05 2008-05-06 Seagate Technology Llc Perpendicular recording head having controlled permeability and saturation moment
JP2007242786A (ja) 2006-03-07 2007-09-20 Tdk Corp Ｃｐｐ型磁気抵抗効果素子
JP4121035B2 (ja) 2006-04-14 2008-07-16 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
US7697244B2 (en) 2006-06-12 2010-04-13 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head with stabilized ferromagnetic shield
JP2008010509A (ja) * 2006-06-27 2008-01-17 Fujitsu Ltd 磁気抵抗効果素子及び磁気ディスク装置
US7920363B2 (en) * 2006-12-22 2011-04-05 Hitachi Global Storage Technologies Netherlands B.V. TMR sensor having magnesium/magnesium oxide tunnel barrier
US7796364B2 (en) 2006-12-29 2010-09-14 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield
WO2008139513A1 (ja) * 2007-04-27 2008-11-20 Fujitsu Limited 磁極幅測定方法

Similar Documents

Publication Publication Date Title
JP2012533141A5 (enExample)
US10658577B2 (en) Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
US11309489B2 (en) Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
CN108352447B (zh) 于高温退火后保持高矫顽力的具有垂直磁各向异性的磁性组件
JP5815204B2 (ja) Ｔｍｒ素子およびその形成方法
JP5674297B2 (ja) Ｔｍｒ素子およびその形成方法
JP5599738B2 (ja) 磁気抵抗効果素子およびその形成方法
EP3467891B1 (en) Reduction of barrier resistance x area (ra) product and protection of perpendicular magnetic anisotropy (pma) for magnetic device applications
JP5232540B2 (ja) 磁気センサ構造および磁気センサ構造のｃｃｐスペーサの形成方法
US9412400B2 (en) Tunnel magnetoresistance read head with narrow shield-to-shield spacing
JP6464516B2 (ja) 磁気セル構造体、および製造の方法
JP6022936B2 (ja) 複合磁気シールドを有する磁気センサ
US20090229111A1 (en) Two step annealing process for TMR device with amorphous free layer
JP2017504208A5 (enExample)
JP2017505537A5 (enExample)
JP2015537376A (ja) 反転直交スピン伝達層スタック
JP2008103661A (ja) トンネル型磁気検出素子及びその製造方法
TWI569483B (zh) 垂直磁化穿隧式磁阻元件及其製造方法
US9508365B1 (en) Magnetic reader having a crystal decoupling structure
US8553371B2 (en) TMR reader without DLC capping structure
CN107958954B (zh) 磁性隧道结的参考层的制备方法、磁性隧道结的制备方法
CN104465073A (zh) 一种各向异性磁阻坡莫合金缓冲层的制备方法
CN106169533B (zh) 磁阻设备和用于制造磁阻设备的方法
KR20180045910A (ko) 수직자기이방성을 갖는 mtj 구조 및 그 제조방법
JP2009147351A5 (enExample)