JP6021745B2 - 冷却部材および半導体装置 - Google Patents
冷却部材および半導体装置 Download PDFInfo
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- JP6021745B2 JP6021745B2 JP2013121645A JP2013121645A JP6021745B2 JP 6021745 B2 JP6021745 B2 JP 6021745B2 JP 2013121645 A JP2013121645 A JP 2013121645A JP 2013121645 A JP2013121645 A JP 2013121645A JP 6021745 B2 JP6021745 B2 JP 6021745B2
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- Prior art keywords
- cooling member
- pores
- metal
- metal member
- resin material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Description
一の表面から当該気孔内に樹脂材料が高密度に含浸される。この樹脂材料により冷却部材が柔軟に弾性変形可能となるため、他の部材との密着性が良好となり、他の部材の熱を伝導して放熱する機能を高めることができる。
(実施の形態1)
まず本実施の形態の半導体装置の構成について図1を用いて説明する。
図2を参照して、冷却部材1は、上記の電力用半導体モジュール2(パワーデバイス)のほか、たとえばLED(Light Emitting Diode)などの素子を冷却および放熱するための部材であり、金属部材21と、樹脂材料22とにより形成されている。金属部材21はアルミニウム、銀、銅、またはアルミニウムと銀と銅との合金のいずれかからなることが好ましい。これらの金属材料は熱伝導率が高いため、金属部材21がこれらの金属材料から形成されることにより、冷却部材1の熱伝導率が高くなり、冷却部材1の熱伝導性(放熱性)が向上する。
図7を参照して、本実施の形態の半導体装置200は、図1に示す実施の形態1の構成と比較して、金属ベース板4を有しない点において異なっている。本実施の形態においては、セラミック基板5が冷却部材1の上側の表面上に載置される。電力用半導体モジュール2が発生する熱はセラミック基板5から冷却部材1に伝えられるが、本実施の形態においても基本的に実施の形態1と同様の作用効果を奏する。
Claims (6)
- 内部に複数の気孔を有するシート状の金属部材と、
前記金属部材の前記気孔内を含浸する樹脂材料とを備え、
前記複数の気孔は、前記金属部材の一の表面から、前記一の表面とは異なる他の表面まで、前記金属部材の内部で互いに連続するように配置されている、冷却部材。 - 前記冷却部材の体積に対する前記気孔の体積の割合は20%以上60%以下である、請求項1に記載の冷却部材。
- 前記気孔の孔径が25μm以上500μm以下である、請求項1または2に記載の冷却部材。
- 前記金属部材は、アルミニウム、銀、銅、アルミニウムと銀と銅との合金からなる群から選択される1種からなる、請求項1〜3のいずれか1項に記載の冷却部材。
- 前記樹脂材料は粘着性を有し、
前記樹脂材料の複素弾性率が1×103N/m2以上1×105N/m2以下である、請求項1〜4のいずれか1項に記載の冷却部材。 - 請求項1〜5のいずれか1項に記載の冷却部材と、
前記冷却部材に取り付けられる半導体素子とを備える、半導体装置。
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JP2013121645A JP6021745B2 (ja) | 2013-06-10 | 2013-06-10 | 冷却部材および半導体装置 |
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JP2013121645A JP6021745B2 (ja) | 2013-06-10 | 2013-06-10 | 冷却部材および半導体装置 |
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JP2014239176A JP2014239176A (ja) | 2014-12-18 |
JP6021745B2 true JP6021745B2 (ja) | 2016-11-09 |
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JP2013121645A Expired - Fee Related JP6021745B2 (ja) | 2013-06-10 | 2013-06-10 | 冷却部材および半導体装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017135150A (ja) * | 2016-01-25 | 2017-08-03 | 日東シンコー株式会社 | 放熱部材及び半導体モジュール |
JP7027094B2 (ja) * | 2017-09-28 | 2022-03-01 | デンカ株式会社 | 放熱部品付きパワーモジュール |
WO2020256394A1 (ko) | 2019-06-17 | 2020-12-24 | 주식회사 엘지화학 | 복합재의 제조 방법 및 복합재 |
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JP3166060B2 (ja) * | 1995-12-11 | 2001-05-14 | 三菱マテリアル株式会社 | 放熱シート |
JP3482115B2 (ja) * | 1997-10-13 | 2003-12-22 | 東レ・ダウコーニング・シリコーン株式会社 | 硬化性シリコーン組成物および電子部品 |
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