JP6008431B2 - Icデバイスのクラックアレストビア - Google Patents

Icデバイスのクラックアレストビア Download PDF

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JP6008431B2
JP6008431B2 JP2013536926A JP2013536926A JP6008431B2 JP 6008431 B2 JP6008431 B2 JP 6008431B2 JP 2013536926 A JP2013536926 A JP 2013536926A JP 2013536926 A JP2013536926 A JP 2013536926A JP 6008431 B2 JP6008431 B2 JP 6008431B2
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dielectric
crack arrest
die
rdl
vias
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JP2013543272A5 (enExample
JP2013543272A (ja
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エフ マッカーシー ロバート
エフ マッカーシー ロバート
シー ベディングフィールド スタンリー
シー ベディングフィールド スタンリー
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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