JP6001768B2 - ＮＵ型及びＰＩ型のバナジウム補償型ＳＩＳｉＣ単結晶及びその結晶成長方法 - Google Patents

ＮＵ型及びＰＩ型のバナジウム補償型ＳＩＳｉＣ単結晶及びその結晶成長方法 Download PDF

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JP6001768B2
JP6001768B2 JP2015514213A JP2015514213A JP6001768B2 JP 6001768 B2 JP6001768 B2 JP 6001768B2 JP 2015514213 A JP2015514213 A JP 2015514213A JP 2015514213 A JP2015514213 A JP 2015514213A JP 6001768 B2 JP6001768 B2 JP 6001768B2
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growth
sic
single crystal
crystal
vanadium
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JP2015517451A5 (https=
JP2015517451A (ja
Inventor
ツビーバック，イルヤ
アンダーソン，トーマス，イー．
グプタ，アヴィネッシュ，ケー．
レンガラジャン，ヴァラサラジャン
ルーランド，ゲイリー，イー．
ソウジス，アンドリュー，イー．
ウー，ピン
シュイ，シュエピン
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Coherent Corp
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Coherent Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/025—Other inorganic material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015514213A 2012-05-24 2013-05-24 ＮＵ型及びＰＩ型のバナジウム補償型ＳＩＳｉＣ単結晶及びその結晶成長方法 Expired - Fee Related JP6001768B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261651143P 2012-05-24 2012-05-24
US61/651,143 2012-05-24
PCT/US2013/042604 WO2013177496A1 (en) 2012-05-24 2013-05-24 Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof

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JP2015517451A JP2015517451A (ja) 2015-06-22
JP2015517451A5 JP2015517451A5 (https=) 2016-09-01
JP6001768B2 true JP6001768B2 (ja) 2016-10-05

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JP2015514213A Expired - Fee Related JP6001768B2 (ja) 2012-05-24 2013-05-24 ＮＵ型及びＰＩ型のバナジウム補償型ＳＩＳｉＣ単結晶及びその結晶成長方法

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US (2) US9090989B2 (https=)
EP (1) EP2855741B1 (https=)
JP (1) JP6001768B2 (https=)
KR (1) KR101661053B1 (https=)
CN (1) CN104364428B (https=)
WO (1) WO2013177496A1 (https=)

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US20170321345A1 (en) 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
CN109666971B (zh) * 2017-10-16 2020-11-10 北京北方华创微电子装备有限公司 生长炉
CN107955969A (zh) * 2017-12-28 2018-04-24 河北同光晶体有限公司 一种持续供料的SiC单晶生长系统
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
JP7268299B2 (ja) * 2018-08-08 2023-05-08 株式会社レゾナック 遮蔽部材及び単結晶成長装置
CN110055588A (zh) * 2019-06-05 2019-07-26 华北电力大学 一种碳化硅单晶生长用固气界面可控的坩埚
JP6806270B1 (ja) * 2019-06-20 2021-01-06 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
CN110408998B (zh) * 2019-07-29 2020-12-22 江苏星特亮科技有限公司 一种碳化硅单晶连续生长装置及其生长方法
CN110565167A (zh) * 2019-08-19 2019-12-13 河北同光晶体有限公司 一种用于PVT法生长SiC单晶的装料装置及装料方法
WO2021085587A1 (ja) * 2019-10-31 2021-05-06 京セラ株式会社 配線基板、電子装置及び電子モジュール
US12006591B2 (en) * 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
CN111534854B (zh) * 2020-06-12 2021-07-13 北京北方华创微电子装备有限公司 晶体生长炉
TWI865578B (zh) 2020-06-18 2024-12-11 盛新材料科技股份有限公司 半絕緣單晶碳化矽塊材以及粉末
JP2021195301A (ja) 2020-06-18 2021-12-27 盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. 半絶縁性単結晶炭化ケイ素粉末の製造方法
US12297561B2 (en) 2020-06-18 2025-05-13 Taisic Materials Corp. Semi-insulating single-crystal silicon carbide bulk material and powder
CN113981536B (zh) 2020-07-27 2024-07-09 环球晶圆股份有限公司 碳化硅晶碇及其制备方法
CN111793821A (zh) * 2020-08-21 2020-10-20 哈尔滨科友半导体产业装备与技术研究院有限公司 一种精确控制pvt法晶体生长气体压力的系统及方法
CN112853491A (zh) * 2020-12-31 2021-05-28 山西烁科晶体有限公司 一种掺杂碳化硅单晶及其制备方法
CN113249792B (zh) * 2021-06-22 2021-09-28 苏州优晶光电科技有限公司 一种调节组分平衡的碳化硅晶体生长方法及设备
CN114000198B (zh) 2021-11-15 2023-03-10 苏州优晶光电科技有限公司 一种多坩埚碳化硅晶体同步生长方法及设备
JP7534809B2 (ja) 2021-11-15 2024-08-15 スーチョウ ユーキング セミコンダクター テクノロジー カンパニー リミテッド 複数の坩堝における炭化ケイ素結晶の同期成長方法及び装置
WO2023157514A1 (ja) * 2022-02-17 2023-08-24 住友電気工業株式会社 炭化珪素基板、炭化珪素基板の製造方法および炭化珪素基板の製造装置

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CN102560671B (zh) * 2010-12-31 2015-05-27 中国科学院物理研究所 半绝缘碳化硅单晶
US9090989B2 (en) 2012-05-24 2015-07-28 Ii-Vi Incorporated Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

Also Published As

Publication number Publication date
EP2855741B1 (en) 2022-04-27
US20130320275A1 (en) 2013-12-05
US9090989B2 (en) 2015-07-28
KR20150013233A (ko) 2015-02-04
JP2015517451A (ja) 2015-06-22
WO2013177496A1 (en) 2013-11-28
CN104364428A (zh) 2015-02-18
EP2855741A1 (en) 2015-04-08
EP2855741A4 (en) 2016-01-06
KR101661053B1 (ko) 2016-09-28
CN104364428B (zh) 2017-09-05
USRE48378E1 (en) 2021-01-05

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