KR101661053B1 - Nu형과 pi형의 바나듐 보상된 si sic 단결정 및 그 결정 성장 공정 - Google Patents

Nu형과 pi형의 바나듐 보상된 si sic 단결정 및 그 결정 성장 공정 Download PDF

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KR101661053B1
KR101661053B1 KR1020147033938A KR20147033938A KR101661053B1 KR 101661053 B1 KR101661053 B1 KR 101661053B1 KR 1020147033938 A KR1020147033938 A KR 1020147033938A KR 20147033938 A KR20147033938 A KR 20147033938A KR 101661053 B1 KR101661053 B1 KR 101661053B1
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growth
sic
crystal
single crystal
sic single
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KR20150013233A (ko
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일리아 즈위백
토마스 이. 앤더슨
아비나쉬 케이. 굽타
바라타라잔 렌가라잔
게리 이. 룰랜드
앤드류 이. 수지스
핑 우
쉬에핑 쉬
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투-식스 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/025—Other inorganic material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020147033938A 2012-05-24 2013-05-24 Nu형과 pi형의 바나듐 보상된 si sic 단결정 및 그 결정 성장 공정 Expired - Fee Related KR101661053B1 (ko)

Applications Claiming Priority (3)

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US201261651143P 2012-05-24 2012-05-24
US61/651,143 2012-05-24
PCT/US2013/042604 WO2013177496A1 (en) 2012-05-24 2013-05-24 Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof

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KR20150013233A KR20150013233A (ko) 2015-02-04
KR101661053B1 true KR101661053B1 (ko) 2016-09-28

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US (2) US9090989B2 (https=)
EP (1) EP2855741B1 (https=)
JP (1) JP6001768B2 (https=)
KR (1) KR101661053B1 (https=)
CN (1) CN104364428B (https=)
WO (1) WO2013177496A1 (https=)

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US9090989B2 (en) 2012-05-24 2015-07-28 Ii-Vi Incorporated Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
CN105734672B (zh) * 2014-12-10 2018-11-30 北京天科合达半导体股份有限公司 一种在含氧气氛下生长高质量碳化硅晶体的方法
US20170321345A1 (en) 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
CN109666971B (zh) * 2017-10-16 2020-11-10 北京北方华创微电子装备有限公司 生长炉
CN107955969A (zh) * 2017-12-28 2018-04-24 河北同光晶体有限公司 一种持续供料的SiC单晶生长系统
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
JP7268299B2 (ja) * 2018-08-08 2023-05-08 株式会社レゾナック 遮蔽部材及び単結晶成長装置
CN110055588A (zh) * 2019-06-05 2019-07-26 华北电力大学 一种碳化硅单晶生长用固气界面可控的坩埚
JP6806270B1 (ja) * 2019-06-20 2021-01-06 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
CN110408998B (zh) * 2019-07-29 2020-12-22 江苏星特亮科技有限公司 一种碳化硅单晶连续生长装置及其生长方法
CN110565167A (zh) * 2019-08-19 2019-12-13 河北同光晶体有限公司 一种用于PVT法生长SiC单晶的装料装置及装料方法
WO2021085587A1 (ja) * 2019-10-31 2021-05-06 京セラ株式会社 配線基板、電子装置及び電子モジュール
US12006591B2 (en) * 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
CN111534854B (zh) * 2020-06-12 2021-07-13 北京北方华创微电子装备有限公司 晶体生长炉
TWI865578B (zh) 2020-06-18 2024-12-11 盛新材料科技股份有限公司 半絕緣單晶碳化矽塊材以及粉末
JP2021195301A (ja) 2020-06-18 2021-12-27 盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. 半絶縁性単結晶炭化ケイ素粉末の製造方法
US12297561B2 (en) 2020-06-18 2025-05-13 Taisic Materials Corp. Semi-insulating single-crystal silicon carbide bulk material and powder
CN113981536B (zh) 2020-07-27 2024-07-09 环球晶圆股份有限公司 碳化硅晶碇及其制备方法
CN111793821A (zh) * 2020-08-21 2020-10-20 哈尔滨科友半导体产业装备与技术研究院有限公司 一种精确控制pvt法晶体生长气体压力的系统及方法
CN112853491A (zh) * 2020-12-31 2021-05-28 山西烁科晶体有限公司 一种掺杂碳化硅单晶及其制备方法
CN113249792B (zh) * 2021-06-22 2021-09-28 苏州优晶光电科技有限公司 一种调节组分平衡的碳化硅晶体生长方法及设备
CN114000198B (zh) 2021-11-15 2023-03-10 苏州优晶光电科技有限公司 一种多坩埚碳化硅晶体同步生长方法及设备
JP7534809B2 (ja) 2021-11-15 2024-08-15 スーチョウ ユーキング セミコンダクター テクノロジー カンパニー リミテッド 複数の坩堝における炭化ケイ素結晶の同期成長方法及び装置
WO2023157514A1 (ja) * 2022-02-17 2023-08-24 住友電気工業株式会社 炭化珪素基板、炭化珪素基板の製造方法および炭化珪素基板の製造装置

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US20030079676A1 (en) 2001-10-29 2003-05-01 Alexandre Ellison High resistivity silicon carbide single crystal
US20080072817A1 (en) 2006-09-26 2008-03-27 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
US20100159182A1 (en) 2008-12-24 2010-06-24 Sicrystal Ag Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus

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US6562130B2 (en) * 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
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US7276117B2 (en) * 2005-02-09 2007-10-02 Cree Dulles, Inc. Method of forming semi-insulating silicon carbide single crystal
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US8858709B1 (en) * 2006-04-11 2014-10-14 Ii-Vi Incorporated Silicon carbide with low nitrogen content and method for preparation
WO2008039914A2 (en) * 2006-09-27 2008-04-03 Ii-Vi Incorporated Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
EP2477944A4 (en) * 2009-09-15 2013-08-28 Ii Vi Inc SUBLIMATION BREEDING OF SIC INDIVIDUAL CRYSTALS
WO2012029952A1 (ja) * 2010-09-02 2012-03-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法、炭化ケイ素単結晶、及び炭化ケイ素単結晶基板
CN102560671B (zh) * 2010-12-31 2015-05-27 中国科学院物理研究所 半绝缘碳化硅单晶
US9090989B2 (en) 2012-05-24 2015-07-28 Ii-Vi Incorporated Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20030079676A1 (en) 2001-10-29 2003-05-01 Alexandre Ellison High resistivity silicon carbide single crystal
US20080072817A1 (en) 2006-09-26 2008-03-27 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
US20100159182A1 (en) 2008-12-24 2010-06-24 Sicrystal Ag Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus

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JP6001768B2 (ja) 2016-10-05
EP2855741B1 (en) 2022-04-27
US20130320275A1 (en) 2013-12-05
US9090989B2 (en) 2015-07-28
KR20150013233A (ko) 2015-02-04
JP2015517451A (ja) 2015-06-22
WO2013177496A1 (en) 2013-11-28
CN104364428A (zh) 2015-02-18
EP2855741A1 (en) 2015-04-08
EP2855741A4 (en) 2016-01-06
CN104364428B (zh) 2017-09-05
USRE48378E1 (en) 2021-01-05

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