JP6272360B2 - バナジウムドープ単結晶およびその成長方法 - Google Patents
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- 239000013078 crystal Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 52
- 229910052720 vanadium Inorganic materials 0.000 claims description 107
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 102
- 239000007789 gas Substances 0.000 claims description 90
- 239000012159 carrier gas Substances 0.000 claims description 71
- 239000007787 solid Substances 0.000 claims description 27
- 239000000460 chlorine Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 24
- 150000003682 vanadium compounds Chemical class 0.000 claims description 22
- 238000000859 sublimation Methods 0.000 claims description 18
- 230000008022 sublimation Effects 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 229910052801 chlorine Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 15
- 229910052736 halogen Inorganic materials 0.000 claims description 15
- 150000002367 halogens Chemical class 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 229910021550 Vanadium Chloride Inorganic materials 0.000 claims description 6
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 claims description 6
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 179
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 176
- 230000008569 process Effects 0.000 description 29
- 239000002243 precursor Substances 0.000 description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 27
- 229910002804 graphite Inorganic materials 0.000 description 23
- 239000010439 graphite Substances 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000006227 byproduct Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000002775 capsule Substances 0.000 description 9
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 8
- 241000894007 species Species 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- -1 vanadium carbide Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
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- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 239000007833 carbon precursor Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
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- 238000006722 reduction reaction Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021552 Vanadium(IV) chloride Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- JTJFQBNJBPPZRI-UHFFFAOYSA-J vanadium tetrachloride Chemical compound Cl[V](Cl)(Cl)Cl JTJFQBNJBPPZRI-UHFFFAOYSA-J 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- URBHJJGWUIXBFJ-UHFFFAOYSA-N [C].[Cl] Chemical compound [C].[Cl] URBHJJGWUIXBFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- 238000012932 thermodynamic analysis Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本発明は、2013年2月21日に出願された米国仮特許出願第61/767,318号の優先権を主張し、その開示内容は、その全体が参照されて本明細書に包含される。
本発明は、炭化ケイ素(SiC)単結晶に関し、より詳細には、深い準位のドーパントのガス源を用いてSiC単結晶を作製する方法に関する。
SiCl2(g)+SiCl4(g)+C2H2(g)+H2(g)⇒SiC(s)+SiCl(g)+HCl(g)
上記反応の正味の効果は、SiCシード522上での固体SiCの凝結およびSiCシード522上でのSiC単結晶524の成長である。ガス状副生成物(HCl、SiCl)およびキャリアガス(Ar、H2)は、開底部通路533を通って、るつぼ520を離れる。図5は、(るつぼ1と同様の)るつぼ51および(RFコイル11と同様の)RFコイル511も示している。
図9Aは、第1実施形態に係るSiC結晶成長システムを示す。先行技術に係るPVTと同様に、成長るつぼ20は、炉室1の内側に配置され、該炉室の内側で断熱材10によって囲まれる。成長るつぼ20には、SiC源粒子21およびSiC単結晶シード22が、間隔を空けて入れられており、SiC源粒子21は、成長るつぼ20の下方に配置され、SiC単結晶シード22は、成長るつぼ20の上方に配置される。成長るつぼ20の加熱はRFコイル11(あるいは他の好適な加熱手段)による。図10のSiC結晶成長システムには、ガスおよび真空ライン、バルブ、真空ポンプ、電子制御装置などのような、一般的かつありふれた部品は簡略化のために示されていない。
図10Aに示される第2実施形態に係る成長システムは、以下の点を除いて、多くの点で図9Aおよび9Bに示される第1実施形態に係る成長システムと類似する。詳しくは、バブラー浴51が省かれ、キャリアガス53がガスライン52中に直に導入され、導管40(上方導管部40bおよび下方導管部40aからなる)がインライングラファイト隔室41を含む点を除いて類似し、図7Aおよび7Bに示されるM−PVTセルと同様に、導管40が、成長るつぼ20から間隔を空けて配置されるグラファイト隔室41を含む。隔室41には、固体のバナジウム源42が、例えば、元素金属バナジウムまたはバナジウムカーバイド(VC)のような固体バナジウム化合物の形態で入れられる。
Claims (9)
- バナジウムドープSiC単結晶を昇華によって成長させる方法であって、
(a)間隔を空けてSiC源材料およびSiC単結晶シードを有する成長るつぼを提供すること、
(b)ステップ(a)の成長るつぼを2000℃〜2400℃の温度に加熱して、前記SiC源材料を昇華させること、
(c)昇華された前記SiC源材料を前記SiC単結晶シードまで輸送し、かつ前記SiC単結晶シード上で析出させる温度勾配を、前記SiC源材料と前記SiC単結晶シードとの間に形成し、これにより、前記SiC単結晶シード上でSiC結晶を成長させること、
(d)ステップ(c)と同時に、2000℃〜2400℃の温度に加熱された前記成長るつぼに入れられることに応じて、熱解離され、化学還元され、または熱解離および化学還元されるガス状バナジウム化合物を含むドーピングガス混合物を、前記成長るつぼの外側の場所から前記成長るつぼ中に導入し、成長中の前記SiC結晶の成長界面に吸着される、ガス状の解離生成物、還元生成物、またはその両方を前記成長るつぼ中に放出し、これにより、成長中の前記SiC結晶をバナジウムでドープすること、
を備える方法。 - 前記ガス状バナジウム化合物はハロゲンを含む、
請求項1に記載の方法。 - 前記ガス状バナジウム化合物は塩化バナジウム(VCln)であり、n=2、3または4である、
請求項2に記載の方法。 - 前記ドーピングガス混合物は、キャリアガスを含む、
請求項1に記載の方法。 - 前記キャリアガスは、不活性ガス、水素、またはその両方を含む、
請求項4に記載の方法。 - 前記キャリアガスは、塩素およびフッ素の群から選ばれるハロゲン添加物を含む、
請求項4に記載の方法。 - 前記ガス状バナジウム化合物は前記VClnの蒸気であり、
前記ドーピングガス混合物は、前記キャリアガスと混合されている前記VClnの蒸気からなる、
請求項4に記載の方法。 - 前記VClnの蒸気は、液状VClnの溜まりに前記キャリアガスを通すことによって前記キャリアガスと混合される、
請求項7に記載の方法。 - 前記VClnの蒸気は、塩素を含むキャリアガスが、前記成長るつぼの外側に配された、加熱された固体バナジウム源の表面を通過することによって、前記キャリアガスと混合される、
請求項7に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361767318P | 2013-02-21 | 2013-02-21 | |
US61/767,318 | 2013-02-21 | ||
US14/064,604 US9322110B2 (en) | 2013-02-21 | 2013-10-28 | Vanadium doped SiC single crystals and method thereof |
US14/064,604 | 2013-10-28 | ||
PCT/US2013/069630 WO2014130108A1 (en) | 2013-02-21 | 2013-11-12 | Vanadium doped sic single crystals and method thereof |
Publications (3)
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JP2016507467A JP2016507467A (ja) | 2016-03-10 |
JP2016507467A5 JP2016507467A5 (ja) | 2016-09-23 |
JP6272360B2 true JP6272360B2 (ja) | 2018-01-31 |
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JP2015559228A Active JP6272360B2 (ja) | 2013-02-21 | 2013-11-12 | バナジウムドープ単結晶およびその成長方法 |
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US (1) | US9322110B2 (ja) |
JP (1) | JP6272360B2 (ja) |
CN (1) | CN105209671B (ja) |
DE (1) | DE112013006709T5 (ja) |
WO (1) | WO2014130108A1 (ja) |
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CN105274624B (zh) * | 2015-10-09 | 2017-09-29 | 张家港市东大工业技术研究院 | 一种利用微波辐照制备钒掺杂半绝缘碳化硅的方法 |
JP6675197B2 (ja) * | 2015-12-28 | 2020-04-01 | 昭和電工株式会社 | 炭化珪素単結晶の製造装置 |
CN105568385A (zh) * | 2016-01-22 | 2016-05-11 | 山东大学 | 一种掺锗SiC体单晶材料的生长方法 |
CN108149315B (zh) * | 2018-01-24 | 2020-10-23 | 中国科学院上海硅酸盐研究所 | 晶体生长用坩埚以及释放碳化硅晶体热应力的方法 |
CN109402731B (zh) * | 2018-10-17 | 2021-01-15 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
CN110699752B (zh) * | 2019-10-30 | 2022-03-22 | 安徽微芯长江半导体材料有限公司 | 分步生长弱磁性Fe-V共掺杂SiC晶体的方法 |
WO2021085587A1 (ja) * | 2019-10-31 | 2021-05-06 | 京セラ株式会社 | 配線基板、電子装置及び電子モジュール |
CN110904501B (zh) * | 2019-11-13 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | 晶体生长用籽晶下置式装置 |
CN111172592B (zh) * | 2019-12-24 | 2021-03-26 | 山东天岳先进科技股份有限公司 | 一种掺杂碳化硅单晶、衬底及制备方法和使用的装置 |
CN113249795A (zh) * | 2020-02-11 | 2021-08-13 | 稳晟材料科技股份有限公司 | 碳化硅长晶设备及其长晶方法 |
CN111232980A (zh) * | 2020-03-23 | 2020-06-05 | 攀钢集团攀枝花钢铁研究院有限公司 | 碳化钒粉末的制备方法 |
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US20220025548A1 (en) * | 2020-07-27 | 2022-01-27 | Globalwafers Co., Ltd. | Silicon carbide ingot and method of fabricating the same |
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