JP5994344B2 - 固体撮像装置、電子機器 - Google Patents

固体撮像装置、電子機器 Download PDF

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Publication number
JP5994344B2
JP5994344B2 JP2012085666A JP2012085666A JP5994344B2 JP 5994344 B2 JP5994344 B2 JP 5994344B2 JP 2012085666 A JP2012085666 A JP 2012085666A JP 2012085666 A JP2012085666 A JP 2012085666A JP 5994344 B2 JP5994344 B2 JP 5994344B2
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JP
Japan
Prior art keywords
wiring
imaging device
state imaging
solid
ground
Prior art date
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Expired - Fee Related
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JP2012085666A
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English (en)
Japanese (ja)
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JP2013219082A5 (enExample
JP2013219082A (ja
Inventor
実希子 小林
実希子 小林
和芳 山下
和芳 山下
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Sony Corp
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Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2012085666A priority Critical patent/JP5994344B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201611254577.0A priority patent/CN106847848B/zh
Priority to US13/852,575 priority patent/US9184208B2/en
Priority to CN201611254173.1A priority patent/CN106935604B/zh
Priority to CN201310104772.5A priority patent/CN103367377B/zh
Publication of JP2013219082A publication Critical patent/JP2013219082A/ja
Publication of JP2013219082A5 publication Critical patent/JP2013219082A5/ja
Priority to US14/830,405 priority patent/US9356057B2/en
Priority to US15/050,165 priority patent/US9419042B2/en
Priority to US15/193,876 priority patent/US9530815B2/en
Application granted granted Critical
Publication of JP5994344B2 publication Critical patent/JP5994344B2/ja
Priority to US15/348,564 priority patent/US9929193B2/en
Priority to US15/889,699 priority patent/US10084002B2/en
Priority to US16/115,169 priority patent/US10490581B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012085666A 2012-04-04 2012-04-04 固体撮像装置、電子機器 Expired - Fee Related JP5994344B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2012085666A JP5994344B2 (ja) 2012-04-04 2012-04-04 固体撮像装置、電子機器
CN201611254577.0A CN106847848B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备
US13/852,575 US9184208B2 (en) 2012-04-04 2013-03-28 Solid-state imaging apparatus and electronic device with improved image quality and increased yield
CN201611254173.1A CN106935604B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备
CN201310104772.5A CN103367377B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备
US14/830,405 US9356057B2 (en) 2012-04-04 2015-08-19 Solid-state imaging apparatus and electronic device
US15/050,165 US9419042B2 (en) 2012-04-04 2016-02-22 Solid-state imaging apparatus and electronic device
US15/193,876 US9530815B2 (en) 2012-04-04 2016-06-27 Solid-state imaging apparatus and electronic device
US15/348,564 US9929193B2 (en) 2012-04-04 2016-11-10 Solid-state imaging apparatus and electronic device
US15/889,699 US10084002B2 (en) 2012-04-04 2018-02-06 Solid-state imaging apparatus and electronic device
US16/115,169 US10490581B2 (en) 2012-04-04 2018-08-28 Solid-state imaging apparatus and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012085666A JP5994344B2 (ja) 2012-04-04 2012-04-04 固体撮像装置、電子機器

Publications (3)

Publication Number Publication Date
JP2013219082A JP2013219082A (ja) 2013-10-24
JP2013219082A5 JP2013219082A5 (enExample) 2015-04-16
JP5994344B2 true JP5994344B2 (ja) 2016-09-21

Family

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JP2012085666A Expired - Fee Related JP5994344B2 (ja) 2012-04-04 2012-04-04 固体撮像装置、電子機器

Country Status (3)

Country Link
US (7) US9184208B2 (enExample)
JP (1) JP5994344B2 (enExample)
CN (3) CN106847848B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9252171B2 (en) * 2010-09-06 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP5994344B2 (ja) * 2012-04-04 2016-09-21 ソニー株式会社 固体撮像装置、電子機器
JP2015012303A (ja) * 2013-06-26 2015-01-19 ソニー株式会社 固体撮像装置および電子機器
JP6180882B2 (ja) * 2013-10-31 2017-08-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、信号処理装置、および電子機器
JP2015198315A (ja) * 2014-04-01 2015-11-09 キヤノン株式会社 固体撮像装置及び撮像システム
JP2016111425A (ja) 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 撮像装置
JP6758952B2 (ja) * 2016-06-28 2020-09-23 キヤノン株式会社 撮像装置および撮像システム
JP6813971B2 (ja) * 2016-07-07 2021-01-13 キヤノン株式会社 光電変換装置及び撮像システム
JP6929267B2 (ja) * 2018-12-26 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
KR102710378B1 (ko) 2019-07-25 2024-09-26 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
WO2021100446A1 (ja) * 2019-11-20 2021-05-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JPWO2023131997A1 (enExample) * 2022-01-05 2023-07-13
EP4579750A4 (en) * 2022-08-24 2025-11-26 Sony Semiconductor Solutions Corp IMAGING ELEMENT AND DISTANCE MEASUREMENT DEVICE

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2758504B2 (ja) * 1990-07-06 1998-05-28 松下電器産業株式会社 半導体記憶装置
JP3467013B2 (ja) * 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
JP2004104203A (ja) 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
JP3794637B2 (ja) * 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
US6781468B1 (en) * 2003-04-30 2004-08-24 Agilent Technologies, Inc Photo-amplifier circuit with improved power supply rejection
CN1993832B (zh) * 2004-07-20 2010-08-18 富士通微电子株式会社 Cmos摄像元件
JP2007042801A (ja) * 2005-08-02 2007-02-15 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
JP4833680B2 (ja) * 2006-02-08 2011-12-07 パナソニック株式会社 固体撮像装置
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
JP2008192648A (ja) * 2007-01-31 2008-08-21 Sanyo Electric Co Ltd 撮像装置
JP4505488B2 (ja) * 2007-09-05 2010-07-21 シャープ株式会社 固体撮像素子および電子情報機器
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP2010212288A (ja) * 2009-03-06 2010-09-24 Renesas Electronics Corp 撮像装置
JP2010273095A (ja) * 2009-05-21 2010-12-02 Renesas Electronics Corp 撮像装置
JP5025703B2 (ja) * 2009-09-25 2012-09-12 株式会社東芝 不揮発性半導体記憶装置
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
US9252171B2 (en) * 2010-09-06 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP5623259B2 (ja) * 2010-12-08 2014-11-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
KR101736321B1 (ko) * 2010-12-22 2017-05-17 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 엑스레이 검출기
JP5994344B2 (ja) * 2012-04-04 2016-09-21 ソニー株式会社 固体撮像装置、電子機器

Also Published As

Publication number Publication date
US20150357362A1 (en) 2015-12-10
CN106847848B (zh) 2020-10-02
CN106935604A (zh) 2017-07-07
US20160307955A1 (en) 2016-10-20
US9530815B2 (en) 2016-12-27
US20160172409A1 (en) 2016-06-16
US10084002B2 (en) 2018-09-25
US9929193B2 (en) 2018-03-27
US9356057B2 (en) 2016-05-31
US20130264468A1 (en) 2013-10-10
US10490581B2 (en) 2019-11-26
US20170062502A1 (en) 2017-03-02
US9419042B2 (en) 2016-08-16
US20180166480A1 (en) 2018-06-14
CN103367377A (zh) 2013-10-23
CN103367377B (zh) 2017-12-01
US9184208B2 (en) 2015-11-10
CN106847848A (zh) 2017-06-13
CN106935604B (zh) 2019-04-26
US20180366503A1 (en) 2018-12-20
JP2013219082A (ja) 2013-10-24

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