JP5991729B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

Info

Publication number
JP5991729B2
JP5991729B2 JP2011223456A JP2011223456A JP5991729B2 JP 5991729 B2 JP5991729 B2 JP 5991729B2 JP 2011223456 A JP2011223456 A JP 2011223456A JP 2011223456 A JP2011223456 A JP 2011223456A JP 5991729 B2 JP5991729 B2 JP 5991729B2
Authority
JP
Japan
Prior art keywords
insulating film
region
etching
state imaging
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011223456A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013084753A5 (enExample
JP2013084753A (ja
Inventor
愛子 加藤
愛子 加藤
剛士 岡部
剛士 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011223456A priority Critical patent/JP5991729B2/ja
Priority to US13/626,525 priority patent/US8802478B2/en
Publication of JP2013084753A publication Critical patent/JP2013084753A/ja
Publication of JP2013084753A5 publication Critical patent/JP2013084753A5/ja
Application granted granted Critical
Publication of JP5991729B2 publication Critical patent/JP5991729B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011223456A 2011-10-07 2011-10-07 固体撮像装置の製造方法 Expired - Fee Related JP5991729B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011223456A JP5991729B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法
US13/626,525 US8802478B2 (en) 2011-10-07 2012-09-25 Method for manufacturing semiconductor device and method for manufacturing solid state image sensor using multiple insulation films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011223456A JP5991729B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013084753A JP2013084753A (ja) 2013-05-09
JP2013084753A5 JP2013084753A5 (enExample) 2014-11-13
JP5991729B2 true JP5991729B2 (ja) 2016-09-14

Family

ID=48042337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011223456A Expired - Fee Related JP5991729B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US8802478B2 (enExample)
JP (1) JP5991729B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6274729B2 (ja) * 2013-02-04 2018-02-07 キヤノン株式会社 固体撮像装置およびカメラ
CN103633106B (zh) * 2013-11-28 2016-06-29 上海华力微电子有限公司 Cmos感光器件接触孔刻蚀方法及cmos感光器件制造方法
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法
JP2015109342A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 撮像装置の製造方法
US9608033B2 (en) * 2014-05-12 2017-03-28 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2016058599A (ja) * 2014-09-11 2016-04-21 キヤノン株式会社 撮像装置の製造方法
JP6808481B2 (ja) * 2016-12-27 2021-01-06 キヤノン株式会社 半導体装置、システム、および、半導体装置の製造方法
JP6664353B2 (ja) * 2017-07-11 2020-03-13 キヤノン株式会社 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法
CN110047862B (zh) * 2019-04-29 2021-04-30 上海华力微电子有限公司 Cmos图像传感器的形成方法
JP2021111692A (ja) 2020-01-10 2021-08-02 パナソニックＩｐマネジメント株式会社 撮像装置および撮像装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4190760B2 (ja) 1995-01-31 2008-12-03 富士通マイクロエレクトロニクス株式会社 半導体装置
JP3623834B2 (ja) 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
US6335552B1 (en) 1995-01-31 2002-01-01 Fujitsu Limited Semiconductor device and method for fabricating the same
US5763910A (en) 1995-01-31 1998-06-09 Fujitsu Limited Semiconductor device having a through-hole formed on diffused layer by self-alignment
US6744091B1 (en) 1995-01-31 2004-06-01 Fujitsu Limited Semiconductor storage device with self-aligned opening and method for fabricating the same
JPH10199991A (ja) * 1996-12-09 1998-07-31 Texas Instr Inc <Ti> 基板にコンタクトを形成する方法及びそのコンタクト
KR100479208B1 (ko) * 2002-10-23 2005-03-28 매그나칩 반도체 유한회사 살리사이드 공정을 이용한 이미지센서의 제조 방법
JP2004228425A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp Ｃｍｏｓイメージセンサの製造方法
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP2005340475A (ja) * 2004-05-26 2005-12-08 Sony Corp 固体撮像装置
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
US20070108546A1 (en) 2005-11-15 2007-05-17 Canon Kabushiki Kaisha Photoelectric converter and imaging system including the same
JP2007165864A (ja) 2005-11-15 2007-06-28 Canon Inc 光電変換装置、光電変換装置の製造方法及び撮像システム
JP5548332B2 (ja) * 2006-08-24 2014-07-16 富士通セミコンダクター株式会社 半導体デバイスの製造方法
JP2008210893A (ja) * 2007-02-23 2008-09-11 Fujitsu Ltd 半導体装置とその製造方法
JP2008227357A (ja) * 2007-03-15 2008-09-25 Sony Corp 固体撮像装置及びその製造方法
JP2010040634A (ja) 2008-08-01 2010-02-18 Renesas Technology Corp 半導体装置およびその製造方法
JP5446281B2 (ja) * 2008-08-01 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP2010165907A (ja) * 2009-01-16 2010-07-29 Panasonic Corp 半導体装置の製造方法
JP2010212365A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法

Also Published As

Publication number Publication date
US20130089947A1 (en) 2013-04-11
US8802478B2 (en) 2014-08-12
JP2013084753A (ja) 2013-05-09

Similar Documents

Publication Publication Date Title
JP5991729B2 (ja) 固体撮像装置の製造方法
US7993951B2 (en) Method of manufacturing photoelectric conversion device
US8247306B2 (en) Solid-state image pickup device and a method of manufacturing the same
US8129809B2 (en) Image sensor and manufacturing method thereof
US10797091B2 (en) Semiconductor imaging device having improved dark current performance
US9202842B2 (en) Method for manufacturing photoelectric conversion device
CN103456755B (zh) 固态摄像装置的制造方法
JP2012248681A (ja) 固体撮像装置の製造方法
JP2017054890A (ja) 固体撮像装置および固体撮像装置の製造方法
JP6808481B2 (ja) 半導体装置、システム、および、半導体装置の製造方法
JP6362093B2 (ja) 固体撮像装置の製造方法及び固体撮像装置
CN105575986A (zh) 固态摄像装置及固态摄像装置的制造方法
JP2011204916A (ja) 固体撮像装置およびその製造方法
US10937822B2 (en) Photoelectric conversion device and manufacturing method of the photoelectric conversion device
JP2006024934A (ja) Ｃｍｏｓイメージセンサーの製造方法
JP5890863B2 (ja) 光電変換装置の製造方法
KR20160021440A (ko) 촬상 장치의 제조 방법 및 촬상 장치
JP6039773B2 (ja) 固体撮像装置の製造方法
JP2014197566A (ja) 固体撮像装置の製造方法
JP2006261414A (ja) 固体撮像装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140925

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140925

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150617

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150713

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150827

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160404

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160719

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160812

R151 Written notification of patent or utility model registration

Ref document number: 5991729

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees