JP5979908B2 - フォトマスク及び半導体装置の製造方法 - Google Patents

フォトマスク及び半導体装置の製造方法 Download PDF

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Publication number
JP5979908B2
JP5979908B2 JP2012039132A JP2012039132A JP5979908B2 JP 5979908 B2 JP5979908 B2 JP 5979908B2 JP 2012039132 A JP2012039132 A JP 2012039132A JP 2012039132 A JP2012039132 A JP 2012039132A JP 5979908 B2 JP5979908 B2 JP 5979908B2
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JP
Japan
Prior art keywords
pattern
line
line pattern
connection
region
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JP2012039132A
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English (en)
Japanese (ja)
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JP2013174728A (ja
JP2013174728A5 (enExample
Inventor
平山　聡
聡 平山
敦 鹿海
敦 鹿海
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012039132A priority Critical patent/JP5979908B2/ja
Priority to US13/770,012 priority patent/US8852830B2/en
Publication of JP2013174728A publication Critical patent/JP2013174728A/ja
Publication of JP2013174728A5 publication Critical patent/JP2013174728A5/ja
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012039132A 2012-02-24 2012-02-24 フォトマスク及び半導体装置の製造方法 Active JP5979908B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012039132A JP5979908B2 (ja) 2012-02-24 2012-02-24 フォトマスク及び半導体装置の製造方法
US13/770,012 US8852830B2 (en) 2012-02-24 2013-02-19 Photomask and semiconductor apparatus manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012039132A JP5979908B2 (ja) 2012-02-24 2012-02-24 フォトマスク及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013174728A JP2013174728A (ja) 2013-09-05
JP2013174728A5 JP2013174728A5 (enExample) 2015-04-09
JP5979908B2 true JP5979908B2 (ja) 2016-08-31

Family

ID=49003228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012039132A Active JP5979908B2 (ja) 2012-02-24 2012-02-24 フォトマスク及び半導体装置の製造方法

Country Status (2)

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US (1) US8852830B2 (enExample)
JP (1) JP5979908B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5957059B2 (ja) * 2014-10-21 2016-07-27 欣永立企業有限公司 タッチセンサの電極回路
KR102275708B1 (ko) * 2015-04-24 2021-07-09 삼성전자주식회사 디스플레이 드라이버 집적 회로의 제조 방법
JP6745712B2 (ja) * 2016-11-30 2020-08-26 日東電工株式会社 配線回路基板およびその製造方法
US12349495B2 (en) 2020-02-21 2025-07-01 Canon Kabushiki Kaisha Semiconductor device and method for manufacturing semiconductor device
JP7585030B2 (ja) * 2020-02-21 2024-11-18 キヤノン株式会社 半導体装置および半導体装置の製造方法
KR102668862B1 (ko) 2020-03-04 2024-05-22 주식회사 엘지에너지솔루션 배터리 랙 및 그것을 포함하는 전력 저장 시스템

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147729A (ja) * 1985-12-20 1987-07-01 Nec Corp 半導体装置の製造方法
JPH01276717A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 半導体の露光方法
JPH05136020A (ja) * 1991-11-11 1993-06-01 Fujitsu Ltd 半導体装置の露光方法
JP4075019B2 (ja) 1996-01-10 2008-04-16 株式会社ニコン 固体撮像装置
JPH09251954A (ja) 1996-01-10 1997-09-22 Nikon Corp 半導体装置、レチクル、および投影露光方法
JP3102384B2 (ja) * 1997-08-20 2000-10-23 日本電気株式会社 露光方法及び露光用マスク
JPH11162836A (ja) 1997-11-28 1999-06-18 Nikon Corp レチクル
JP2004071631A (ja) * 2002-08-01 2004-03-04 Sony Corp マスクパターン作成方法、マスクおよびレジストパターン形成方法

Also Published As

Publication number Publication date
US20130224637A1 (en) 2013-08-29
JP2013174728A (ja) 2013-09-05
US8852830B2 (en) 2014-10-07

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