JP5979740B2 - 炭化ケイ素単結晶成長装置及びその方法 - Google Patents

炭化ケイ素単結晶成長装置及びその方法 Download PDF

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Publication number
JP5979740B2
JP5979740B2 JP2014518794A JP2014518794A JP5979740B2 JP 5979740 B2 JP5979740 B2 JP 5979740B2 JP 2014518794 A JP2014518794 A JP 2014518794A JP 2014518794 A JP2014518794 A JP 2014518794A JP 5979740 B2 JP5979740 B2 JP 5979740B2
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silicon carbide
crucible
single crystal
crystal growth
carbide single
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Japanese (ja)
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JP2014518195A (ja
Inventor
ユン ショル キム
ユン ショル キム
スン ヒュク ベ
スン ヒュク ベ
スン ワン ホン
スン ワン ホン
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SK Innovation Co Ltd
SK Energy Co Ltd
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SK Innovation Co Ltd
SK Energy Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014518794A 2011-06-29 2012-06-26 炭化ケイ素単結晶成長装置及びその方法 Expired - Fee Related JP5979740B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0063656 2011-06-29
KR1020110063656A KR20130007109A (ko) 2011-06-29 2011-06-29 탄화규소 단결정 성장 장치 및 그 방법
PCT/KR2012/005048 WO2013002540A2 (en) 2011-06-29 2012-06-26 Apparatus and method for growing silicon carbide single crystal

Publications (2)

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JP2014518195A JP2014518195A (ja) 2014-07-28
JP5979740B2 true JP5979740B2 (ja) 2016-08-31

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JP2014518794A Expired - Fee Related JP5979740B2 (ja) 2011-06-29 2012-06-26 炭化ケイ素単結晶成長装置及びその方法

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JP (1) JP5979740B2 (ko)
KR (1) KR20130007109A (ko)
WO (1) WO2013002540A2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101636435B1 (ko) * 2014-10-22 2016-07-06 한국세라믹기술원 다공성 흑연도가니 및 이를 이용한 탄화규소 단결정의 용액성장 제조방법
KR101633183B1 (ko) * 2014-10-27 2016-06-24 오씨아이 주식회사 잉곳 제조 장치
JP2017119594A (ja) * 2015-12-28 2017-07-06 東洋炭素株式会社 単結晶ＳｉＣの製造方法及び収容容器
WO2017183747A1 (ko) * 2016-04-21 2017-10-26 한국세라믹기술원 용액성장용 도가니 및 도가니 내의 용액성장 방법
CN105970295B (zh) * 2016-06-24 2018-04-10 山东天岳先进材料科技有限公司 一种液相法生长碳化硅晶体的装置及方法
KR102103884B1 (ko) * 2016-09-30 2020-04-23 주식회사 엘지화학 실리콘카바이드 단결정의 제조 장치 및 제조 방법
KR102088924B1 (ko) * 2018-09-06 2020-03-13 에스케이씨 주식회사 탄화규소 단결정 잉곳 성장 장치
KR102479334B1 (ko) * 2018-10-11 2022-12-19 주식회사 엘지화학 실리콘카바이드 단결정의 제조 장치 및 제조 방법
KR102166640B1 (ko) * 2018-11-09 2020-10-16 일진디스플레이(주) 탄화규소 단결정 성장장치용 지그
CN111676519A (zh) * 2020-08-05 2020-09-18 郑红军 碳化硅晶体熔体生长装置
CN114525587B (zh) * 2022-04-22 2022-07-19 中电化合物半导体有限公司 基于pvt法生长碳化硅单晶的设备及方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795893A (en) * 1980-12-03 1982-06-14 Fujitsu Ltd Liquid phase epitaxially growing method
JPH02221187A (ja) * 1989-02-20 1990-09-04 Sumitomo Electric Ind Ltd 液相エピタキシャル成長方法
JP3893012B2 (ja) * 1999-05-22 2007-03-14 独立行政法人科学技術振興機構 Ｃｌｂｏ単結晶の育成方法
JP4561000B2 (ja) * 2001-05-31 2010-10-13 住友金属工業株式会社 炭化珪素（ＳｉＣ）単結晶の製造方法
US7794842B2 (en) * 2004-12-27 2010-09-14 Nippon Steel Corporation Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
JP4225296B2 (ja) * 2005-06-20 2009-02-18 トヨタ自動車株式会社 炭化珪素単結晶の製造方法
JP2008037729A (ja) * 2006-08-10 2008-02-21 Shin Etsu Chem Co Ltd 単結晶炭化珪素及びその製造方法
JP5304600B2 (ja) * 2009-11-09 2013-10-02 トヨタ自動車株式会社 ＳｉＣ単結晶の製造装置及び製造方法

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KR20130007109A (ko) 2013-01-18
WO2013002540A2 (en) 2013-01-03
JP2014518195A (ja) 2014-07-28
WO2013002540A3 (en) 2013-04-11

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